PANASONIC MA3D653

Fast Recovery Diodes (FRD)
MA3D653
Silicon planar type (cathode common)
Unit : mm
For high-frequency rectification
4.6 ± 0.2
9.9 ± 0.3
3.0 ± 0.5
■ Features
15.0 ± 0.5
• Low forward rise voltage VF
• Fast reverse recovery time trr
• TO-220D (Full-pack package) with high dielectric breakdown
voltage > 5.0 kV
• Easy-to-mount, caused by its V cut lead end
φ 3.2 ± 0.1
13.7 ± 0.2
4.2 ± 0.2
1.4 ± 0.2
0.8 ± 0.1
1
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
300
V
Non-repetitive peak reverse
surge voltage
VRSM
300
V
Average forward current
IF(AV)
5
A
Non-repetitive peak forward
surge current*
IFSM
45
A
Junction temperature
Tj
−40 to +150
°C
Storage temperature
Tstg
−40 to +150
°C
2.6 ± 0.1
1.6 ± 0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
2.9 ± 0.2
2
0.55 ± 0.15
2.54 ± 0.3
3 5.08 ± 0.5
1 : Anode
2 : Cathode
3 : Anode
TO-220D Package
Internal Connection
1
2
3
Min
Typ
Max
Note) * : Half sine-wave; 10 ms/cycle
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Repetitive peak reverse current
Conditions
IRRM1
VRRM = 300 V, TC = 25°C
20
µA
IRRM2
VRRM = 300 V, Tj = 150°C
2
mA
Forward voltage (DC)
VF
IF = 2.5 A, TC = 25°C
Reverse recovery time*
trr
IF = 1 A, IR = 1 A
Thermal resistance
Unit
0.98
V
50
ns
Rth(j-c)
3
°C/W
Rth(j-a)
63
°C/W
Note) 1. Rated input/output frequency: 10 MHz
2. Tightening torque-max. 8 kg × cm
3. * : trr measuring circuit
50 Ω
50 Ω
trr
IF
D.U.T
5.5 Ω
IR
0.1 × IR
1
MA3D653
Fast Recovery Diodes (FRD)
IF  V F
100°C 25°C
Ta = 150°C
IR  Ta
100
1.4
−20°C
VR = 300 V
10
Forward voltage VF (V)
1
Forward current IF (A)
VF  Ta
1.6
10−1
10−2
10−3
1.2
Reverse current IR (µA)
10
1.0
IF = 5 A
0.8
2.5 A
1A
0.6
0.4
100 V
10 V
1
0.1
0.01
10−4
0.2
10−5
0
0.2
0.4
0.6
0.8
1.0
0
−40
1.2
Forward voltage VF (V)
120
160
200
Ta = 150°C
100°C
10−6
10−7
25°C
10−8
10−9
250
200
150
100
50
0
0
50
100
150
200
250
Reverse voltage VR (V)
300
0
50
100
150
200
250
Reverse voltage VR (V)
0.001
−40
0
40
80
120
160
Ambient temperature Ta (°C)
Ct  VR
Terminal capacitance Ct (pF)
Reverse current IR (A)
80
300
10−5
2
40
Ambient temperature Ta (°C)
IR  V R
10−4
10−10
0
300
200