Schottky Barrier Diodes (SBD) MA3D749, MA3D749A Silicon epitaxial planar type (cathode common) Unit : mm For switching power supply φ 3.2 ± 0.1 1.4 ± 0.2 0.8 ± 0.1 1 Repetitive peak reverse voltage MA3D749 Rating Unit VRRM 40 V MA3D749A 2 IF(AV) 5 A Non-repetitive peak forward surge current* IFSM 90 A Junction temperature Tj −40 to +125 °C Storage temperature Tstg −40 to +125 °C 0.55 ± 0.15 2.54 ± 0.3 3 5.08 ± 0.5 45 Average forward current 2.6 ± 0.1 1.6 ± 0.2 ■ Absolute Maximum Ratings Ta = 25°C Symbol 2.9 ± 0.2 3.0 ± 0.5 15.0 ± 0.5 • Low forward rise voltage VF • TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV • Easy-to-mount, caused by its V cut lead end 13.7 ± 0.2 4.2 ± 0.2 ■ Features Parameter 4.6 ± 0.2 9.9 ± 0.3 1 : Anode 2 : Cathode 3 : Anode TO-220D Package Internal Connection Note) * : Half sine-wave; 10 ms/cycle 1 2 3 ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol MA3D749 IR MA3D749A Forward voltage (DC) Thermal resistance VF Rth(j-c) Conditions Max Unit VR = 40 V, TC = 25°C 1 mA VR = 45 V, TC = 25°C 1 IF = 2.5 A, TC = 25°C 0.55 V 3 °C/W Direct current (between junction and case) Min Typ Note) Rated input/output frequency: 200 MHz 1 MA3D749, MA3D749A Schottky Barrier Diodes (SBD) IF V F 75°C 25°C Ta = 125°C 104 Forward voltage VF (V) Forward current IF (A) 105 0.7 −20°C 1 IR VR VF Ta 0.8 10−1 10−2 10−3 Reverse current IR (µA) 10 0.6 IF = 5 A 0.5 0.4 2.5 A 0.3 1A 0.2 Ta = 125°C 103 75°C 102 25°C 10 0.1 0 0.2 0.4 0.6 0.8 1.0 0 −40 1.2 Forward voltage VF (V) 1 0 40 80 120 IR T a Terminal capacitance Ct (pF) VR = 45 V 20 V 10 V 103 102 10 40 80 120 160 200 500 400 300 200 Ambient temperature Ta (°C) IF(AV) TC Average forward current IF(AV) (A) 8 7 t0 t1 6 t0 / t1 = 1/2 5 1/3 DC 4 1/6 3 2 1 0 20 40 60 80 100 120 Case temperature TC (°C) 2 140 20 30 40 50 7 60 40 50 Reverse voltage VR (V) 60 t0 t1 6 5 t0 / t1 = 1/6 4 1/3 1/2 3 DC 2 1 0 10 30 PD(AV) IF(AV) f = 1 MHz Ta = 25°C 0 20 8 600 0 0 10 Reverse voltage VR (V) 100 1 −40 0 Ct VR 800 700 Reverse current IR (µA) 200 Ambient temperature Ta (°C) 105 104 160 Average forward power PD(AV) (W) 10−4 0 1 2 3 4 5 6 Average forward current IF(AV) (A)