Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.028C IR2111 HALF-BRIDGE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n CMOS Schmitt-triggered inputs with pull-down n Matched propagation delay for both channels n Internally set deadtime n High side output in phase with input VOFFSET 600V max. IO+/- 200 mA / 420 mA VOUT 10 - 20V ton/off (typ.) 850 & 150 ns Deadtime (typ.) 700 ns Packages Description The IR2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Typical Connection up to 600V VCC VCC IN IN COM VB HO VS TO LOAD LO To Order C ONTROL I NTEGRATED CIRCUIT D ESIGNERS M ANUAL B-39 Previous Datasheet Index Next Data Sheet IR2111 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 7 through 10. Symbol Parameter Definition Value Min. Max. VB High Side Floating SupplyVoltage -0.3 625 VS High Side Floating Supply Offset Voltage VB - 25 VB + 0.3 VHO High Side Floating OutputVoltage VS - 0.3 VB + 0.3 VCC Low Side and Logic Fixed Supply Voltage -0.3 25 VLO Low Side Output Voltage -0.3 VCC + 0.3 VIN Logic InputVoltage dV s/dt PD RθJA -0.3 VCC + 0.3 Allowable Offset SupplyVoltage Transient (Figure 2) — 50 Package Power Dissipation @ TA ≤ +25°C Thermal Resistance, Junction to Ambient (8 Lead DIP) — 1.0 (8 Lead SOIC) — 0.625 (8 Lead DIP) — 125 (8 Lead SOIC) — 200 TJ JunctionTemperature — 150 TS Storage Temperature -55 150 TL LeadTemperature (Soldering, 10 seconds) — 300 Units V V/ns W °C/W °C Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential. Symbol Parameter Definition Value Min. Max. VB High Side Floating Supply AbsoluteVoltage VS + 10 VS + 20 VS High Side Floating Supply Offset Voltage Note 1 600 VHO High Side Floating OutputVoltage VS VB VCC Low Side and Logic Fixed Supply Voltage 10 20 VLO Low Side Output Voltage 0 VCC VIN Logic InputVoltage 0 VCC TA AmbientTemperature -40 125 Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. B-40 CONTROL INTEGRATED C IRCUIT DESIGNERS MANUAL To Order Units V °C Previous Datasheet Index Next Data Sheet IR2111 Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3. Symbol Parameter Definition Value Min. Typ. Max. Units Test Conditions t on Turn-On Propagation Delay — 850 1,000 VS = 0V t off Turn-Off Propagation Delay — 150 180 VS = 600V tr Turn-On Rise Time — 80 130 tf Turn-Off Fall Time — 40 65 DT Deadtime, LS Turn-Off to HS Turn-On & HS Turn-Off to LS Turn-On — 700 900 MT Delay Matching, HS & LS Turn-On/Off — 30 — ns Static Electrical Characteristics VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO. Symbol VIH VIL Parameter Definition Value Min. Typ. Max. Units Test Conditions Logic “1” Input Voltage for HO & Logic “0” for LO Logic “0” Input Voltage for HO & Logic “1” for LO 6.4 — — VCC = 10V 9.5 — — VCC = 15V 12.6 — — — — 3.8 — — 6.0 VCC = 15V VCC = 20V V VCC = 20V VCC = 10V — — 8.3 VOH High Level Output Voltage, VBIAS - VO — — 100 VOL Low Level Output Voltage, VO — — 100 I LK Offset Supply Leakage Current — — 50 VB = VS = 600V I QBS — 50 100 VIN = 0V or VCC IQCC Quiescent VBS Supply Current Quiescent VCC Supply Current — 70 180 IIN+ Logic “1” Input Bias Current — 20 40 VIN = VCC IIN- Logic “0” Input Bias Current — — 1.0 VIN = 0V VBSUV+ VBS Supply Undervoltage Positive Going Threshold 7.3 8.4 9.5 VBSUV- VBS Supply Undervoltage Negative Going Threshold 7.0 8.1 9.2 VCCUV+ VCC Supply Undervoltage Positive Going Threshold 7.6 8.6 9.6 VCCUV- VCC Supply Undervoltage Negative Going Threshold 7.2 8.2 9.2 IO+ Output High Short Circuit Pulsed Current 200 250 — I O- Output Low Short Circuit Pulsed Current 420 500 — To Order mV µA IO = 0A IO = 0A VIN = 0V or VCC V VO = 0V, VIN = VCC mA PW ≤ 10 µs VO = 15V, VIN = 0V PW ≤ 10 µs CONTROL INTEGRATED C IRCUIT DESIGNERS MANUAL B-41 Previous Datasheet Index Next Data Sheet IR2111 Functional Block Diagram VB HV LEVEL SHIFT DEAD TIME UV DETECT R PULSE FILTER R Q PULSE GEN IN HO S VS UV DETECT VCC LO DEAD TIME COM Lead Definitions Lead Symbol Description IN VB HO VS VCC LO COM Logic input for high side and low side gate driver outputs (HO & LO), in phase with HO High side floating supply High side gate drive output High side floating supply return Low side and logic fixed supply Low side gate drive output Low side return Lead Assignments 8 Lead DIP SO-8 IR2111 IR2111S Part Number B-42 CONTROL INTEGRATED C IRCUIT DESIGNERS MANUAL To Order Previous Datasheet Index Next Data Sheet IR2111 Device Information Process & Design Rule Transistor Count Die Size Die Outline Thickness of Gate Oxide Connections First Layer Second Layer Contact Hole Dimension Insulation Layer Passivation Method of Saw Method of Die Bond Wire Bond Leadframe Package HVDCMOS 4.0 µm 164 70 X 96 X 26 (mil) Material Width Spacing Thickness Material Width Spacing Thickness Material Thickness Material Thickness Method Material Material Die Area Lead Plating Types Materials 800Å Poly Silicon 4 µm 6 µm 5000Å Al - Si (Si: 1.0% ±0.1%) 6 µm 9 µm 20,000Å 8 µm X 8 µm PSG (SiO2) 1.5 µm PSG (SiO2) 1.5 µm Full Cut Ablebond 84 - 1 Thermo Sonic Au (1.0 mil / 1.3 mil) Cu Ag Pb : Sn (37 : 63) 8 Lead PDIP / SO-8 EME6300 / MP150 / MP190 Remarks: To Order CONTROL INTEGRATED C IRCUIT DESIGNERS MANUAL B-43 Previous Datasheet Index Next Data Sheet IR2111 IN HO LO Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage Transient Test Circuit IN(LO) 50% 50% IN(HO) t on t off tr 90% LO HO Figure 3. Switching Time Test Circuit tf 90% 10% 10% Figure 4. Switching Time Waveform Definition IN (LO) 50% 50% 50% LO 90% HO 10% HO 10% MT DT LO 50% IN (HO) IN 90% 90% LO 10% Figure 5. Deadtime Waveform Definitions B-44 MT CONTROL INTEGRATED C IRCUIT DESIGNERS MANUAL HO Figure 6. Delay Matching Waveform Definitions To Order Previous Datasheet Index Next Data Sheet IR2111 320V 150 320V 150 140V 140V 125 100 75 10V 50 Junction Temperature (°C) Junction Temperature (°C) 125 25 10V 75 50 25 0 1E+2 100 0 1E+3 1E+4 1E+5 1E+6 1E+2 1E+3 Frequency (Hz) 1E+4 1E+5 1E+6 Frequency (Hz) Figure 7. IR2111 TJ vs. Frequency (IRFBC20) Ω, VCC = 15V RGATE = 33Ω 320V 140V 150 Figure 8. IR2111 TJ vs. Frequency (IRFBC30) Ω , VCC = 15V RGATE = 22Ω 10V 320V 140V 150 10V 125 Junction Temperature (°C) Junction Temperature (°C) 125 100 75 50 25 75 50 25 0 1E+2 100 0 1E+3 1E+4 1E+5 Frequency (Hz) Figure 9. IR2111 TJ vs. Frequency (IRFBC40) Ω, VCC = 15V RGATE = 15Ω To Order 1E+6 1E+2 1E+3 1E+4 1E+5 1E+6 Frequency (Hz) Figure 10. IR2111 TJ vs. Frequency (IRFPE50) Ω , VCC = 15V RGATE = 10Ω CONTROL INTEGRATED C IRCUIT DESIGNERS MANUAL B-45