IRF IR2131

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Data Sheet No. PD-6.032C
IR2131
3 HIGH SIDE AND 3 LOW SIDE DRIVER
Features
Product Summary
n Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n Gate drive supply range from 10 to 20V
n Undervoltage lockout for all channels
n Over-current shutdown turns off all six drivers
n Independent 3 high side & 3 low side drivers
n Matched propagation delay for all channels
n Outputs out of phase with inputs
Description
The IR2131 is a high voltage, high speed power
MOSFET and IGBT driver with three independent high
and low side referenced output channels. Proprietary
HVIC technology enables ruggedized monolithic
construction. Logic inputs are compatible with 5V
CMOS or LSTTL outputs. A current trip function which
terminates all six outputs can be derived from an
external current sense resistor. A shutdown input is
provided for a customized shutdown function. An open
drain FAULT signal is provided to indicate that any of
the shutdowns has occurred. The output drivers
feature a high pulse current buffer stage designed for
minimum driver cross-conduction. Propagation delays
are matched to simplify use in high frequency
applications. The floating channels can be used to
drive N-channel power MOSFETs or IGBTs in the high
side configuration which operate up to 600 volts.
VOFFSET
600V max.
IO+/-
200 mA / 420 mA
VOUT
10 - 20V
ton/off (typ.)
1.3 & 0.6 µs
Deadtime (typ.)
700 ns
Packages
Typical Connection
To Order
CONTROL I NTEGRATED CIRCUIT DESIGNERS’ MANUAL
B-157
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IR2131
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions. Additional Information is shown in Figures 7 through 10.
Symbol
VB1,2,3
VS1,2,3
VHO1,2,3
VCC
VSS
VLO1,2,3
VIN
VFLT
dVS/dt
PD
RθJA
TJ
TS
TL
Parameter
Definition
Value
High Side Floating Supply Voltage
High Side Floating Offset Voltage
High Side Floating Output Voltage
Low Side and Logic Fixed Supply Voltage
Logic Ground
Low Side Output Voltage
Logic Input Voltage (HIN1,2,3 ,LIN1,2,3 ,FLT - CLR , SD & ITRIP)
FAULT Output Voltage
Allowable Offset Supply Voltage Transient
Package Power Dissipation @ TA ≤ +25°C
(28 Lead DIP)
(28 Lead SOIC)
(44 Lead PLCC)
Thermal Resistance, Junction to Ambient
(28 Lead DIP)
(28 Lead SOIC)
(44 Lead PLCC)
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Min.
Max.
-0.3
VB1,2,3 - 25
VS1,2,3 - 0.3
-0.3
VCC - 25
-0.3
VSS - 0.3
VSS - 0.3
—
—
—
—
—
—
—
—
-55
—
525
VB1,2,3 + 0.3
VB1,2,3 + 0.3
25
VCC + 0.3
VCC + 0.3
VCC + 0.3
VCC + 0.3
50
1.5
1.6
2.0
83
78
63
150
150
300
Units
V
V/ns
W
°C/W
°C
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltage parameters are absolute voltages referenced to COM. The VS offset rating is
tested with all supplies biased at 15V differential.
Symbol
VB1,2,3
VS1,2,3
VHO1,2,3
VCC
VSS
VLO1,2,3
VIN
VFLT
TA
Parameter
Definition
Value
High Side Floating Supply Voltage
High Side Floating Offset Voltage
High Side Floating Output Voltage
Low Side and Logic Fixed Supply Voltage
Logic Ground
Low Side Output Voltage
Logic Input Voltage (HIN1,2,3 , LIN1,2,3 ,FLT - CLR , SD & ITRIP)
FAULT Output Voltage
Ambient Temperature
Min.
Max.
VS1,2,3 + 10
Note 1
VS1,2,3
10
-5
0
VSS
VSS
-40
VS1,2,3 + 20
600
VB1,2,3
20
5
VCC
VSS + 5
VCC
125
Note 1: Logic operational for VS of -5V to +600V. Logic state held for VS of -5V to -VBS.
B-158 CONTROL INTEGRATED CIRCUIT DESIGNERS’ MANUAL
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Units
V
°C
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IR2131
Dynamic Electrical Characteristics
VBIAS (VCC, VBS1,2,3) = 15V, VS1,2,3 = VSS = COM, CL = 1000 pF and TA = 25°C unless otherwise specified. The
dynamic electrical characteristics are defined in Figures 4 through 5.
Symbol
ton
toff
tr
tf
t itrip
t bl
tflt
tflt,in
tfltclr
t sd
DT
Parameter
Definition
Value
Min. Typ. Max. Units Test Conditions
Turn-On Propagation Delay
Turn-Off Propagation Delay
Turn-On Rise Time
Turn-Off Fall Time
ITRIP to Output Shutdown Propagation Delay
ITRIP Blanking Time
ITRIP to FAULT Indication Delay
Input Filter Time (All Six Inputs)
FLT - CLR to FAULT Clear Time
SD to Output Shutdown Propagation Delay
Deadtime
0.6
0.2
—
—
400
—
400
—
400
400
400
1.3
0.6
80
40
700
400
700
310
700
700
700
2.0
1.0
150
100
1000
—
1000
—
1000
1000
1200
µs
ns
VIN = 0 & 5V
VS1,2,3 = 0 to 600V
V IN, VITRIP = 0 & 5V
VITRIP = 1V
VIN, VITRIP = 0 & 5V
VIN = 0 & 5V
VIN, VIT , VFC = 0&5V
VIN, VSD = 0 & 5V
VIN = 0 & 5V
Static Electrical Characteristics
VBIAS (VCC , VBS1,2,3) = 15V, VS1,2,3 = VSS = COM and TA = 25°C unless otherwise specified. The VIN, VTH and IIN
parameters are referenced to VSS and are applicable to all six logic input leads: HIN1,2,3 & LIN1,2,3 . The VO and IO
parameters are referenced to COM and VS1,2,3 and are applicable to the respective output leads: HO1,2,3 or LO1,2,3.
Symbol
VIH
VIL
VFCLR,IH
VFCLR,IL
VSD,TH+
VSD,THVIT,TH+
VIT,THVOH
VOL
I LK
IQBS
IQCC
IIN+
IINI ITRIP+
IITRIPIFCLR+
I FCLRISD+
I SD-
Parameter
Definition
Logic “0” Input Voltage (OUT = LO)
Logic “1” Input Voltage (OUT = HI)
Logic “0” Fault Clear Input Voltage
Logic “1” Fault Clear Input Voltage
Shutdown Input Positive Going Threshold
Shutdown Input Negative Going Threshold
ITRIP Input Positive Going Threshold
ITRIP Input Negative Going Threshold
High Level Output Voltage, VBIAS - VO
Low Level Output Voltage, VO
Offset Supply Leakage Current
Quiescent VBS Supply Current
Quiescent VCC Supply Current
Logic “1” Input Bias Current (OUT = HI)
Logic “0” Input Bias Current (OUT = LO)
“High” ITRIP Bias Current
“Low” ITRIP Bias Current
Logic “1” Fault Clear Bias Current
Logic “0” Fault Clear Bias Current
Logic “1” Shutdown Bias Current
Logic “0” Shutdown Bias Current
To Order
Min.
2.2
—
2.2
—
1.2
0.9
250
200
—
—
—
—
—
—
—
—
—
—
—
—
—
Value
Typ. Max. Units Test Conditions
—
—
—
—
1.8
1.5
485
400
—
—
—
30
3.0
190
50
75
—
125
75
75
—
—
0.8
—
0.8
2.1
1.8
600
550
100
100
50
100
4.5
300
100
150
100
250
150
150
100
V
mV
µA
mA
µA
nA
µA
nA
VIN = 0V, IO = 0A
VIN = 5V, IO = 0A
VB = VS = 600V
VIN = 0V or 5V
VIN = 0V or 5V
VIN = 0V
VIN = 5V
ITRIP = 5V
ITRIP = 0V
FLT - CLR = 0V
FLT - CLR = 5V
SD = 5V
SD = 0V
CONTROL INTEGRATED CIRCUIT DESIGNERS’ MANUAL B-159
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IR2131
Static Electrical Characteristics -- Continued
VBIAS (VCC, VBS1,2,3) = 15V, VS1,2,3 = VSS = COM and TA = 25°C unless otherwise specified. The VIN, VTH and I IN
parameters are referenced to VSS and are applicable to all six logic input leads: HIN1,2,3 & LIN1,2,3 . The VO and IO
parameters are referenced to COM and VS1,2,3 and are applicable to the respective output leads: HO1,2,3 or LO1,2,3.
Parameter
Definition
Symbol
VBSUV+
Min.
Ron,FLT
IO+
VBS Supply Undervoltage Positive Going
Threshold
VBS Supply Undervoltage Negative Going
Threshold
VCC Supply Undervoltage Positive Going
Threshold
VCC Supply Undervoltage Negative Going
Threshold
FAULT Low On-Resistance
Output High Short Circuit Pulsed Current
IO-
Output Low Short Circuit Pulsed Current
VBSUVVCCUV+
VCCUV-
Value
Typ. Max. Units Test Conditions
8.2
8.7
9.2
7.8
8.3
8.8
8.2
8.7
9.2
7.8
8.3
8.8
—
200
55
250
75
—
420
500
—
V
Ω
mA
VO = 0V, VIN = 0V
PW ≤ 10 µs
VO = 15V, VIN = 5V
PW ≤ 10 µs
Lead Assignments
28 Lead DIP
44 Lead PLCC w/o 12 Leads
28 Lead SOIC (Wide Body)
IR2131
IR2131J
Part Number
IR2131S
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IR2131
Functional Block Diagram
Lead Definitions
Lead
Symbol Description
HIN1,2,3
Logic inputs for high side gate driver outputs (HO1,2,3), out of phase
LIN1,2,3
Logic inputs for low side gate driver output (LO1,2,3), out of phase
FLT - CLR Logic input for fault clear
SD
Logic input for shutdown
FAULT
Indicates over-current or undervoltage lockout (low side) has occurred, negative logic
VCC
Low side and logic fixed supply
ITRIP
Input for over-current shutdown
VSS
Logic ground
VB1,2,3
High side floating supplies
HO1,2,3
High side gate drive outputs
VS1,2,3
High side floating supply returns
LO1,2,3
Low side gate drive outputs
COM
Low side return
To Order
CONTROL INTEGRATED CIRCUIT DESIGNERS’ MANUAL B-161
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IR2131
Device Information
Process & Design Rule
Transistor Count
Die Size
Die Outline
Thickness of Gate Oxide
Connections
First
Layer
Second
Layer
Contact Hole Dimension
Insulation Layer
Passivation
Method of Saw
Method of Die Bond
Wire Bond
Leadframe
Package
HVDCMOS 4.0 µm
700
167 X 141 X 26 (mil)
Material
Width
Spacing
Thickness
Material
Width
Spacing
Thickness
Material
Thickness
Material
Thickness
Method
Material
Material
Die Area
Lead Plating
Types
Materials
800Å
Poly Silicon
4 µm
6 µm
5000Å
Al - Si (Si: 1.0% ±0.1%)
6 µm
9 µm
20,000Å
8 µm X 8 µm
PSG (SiO 2)
1.5 µm
PSG (SiO 2)
1.5 µm
Full Cut
Ablebond 84 - 1
Thermo Sonic
Au (1.0 mil / 1.3 mil)
Cu
Ag
Pb : Sn (37 : 63)
28 Lead PDIP & SOIC / 44 Lead PLCC
EME6300 / MP150 / MP190
Remarks:
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IR2131
HIN1,2,3
LIN1,2,3
ITRIP
SD
FLT - CLR
FAULT
LO1,2,3
HO1,2,3
Figure 1. Input/Output Timing Diagram
Figure 2. Floating Supply Voltage Transient Test Circuit
HIN1,2,3
LIN1,2,3
50%
ton
50%
toff
tr
FLT-CLR
SD
90%
tf
90%
C0M
HO1,2,3
LO1,2,3
Figure 3. Switching Time Test Circuit
10%
10%
Figure 4. Switching Time Waveform Definitions
LIN1,2,3
HIN1,2,3
50%
ITRIP
50%
50%
50%
SD
FLT - CLR
LIN1,2,3
50%
FAULT
LO1,2,3
50%
50%
50%
50%
50%
LO1,2,3
50%
HO1,2,3
tflt
DT
DT
Figure 5. Deadtime Waveform Definitions
To Order
tfltclr
tsd
titrip
Figure 6. Shutdown Waveform Definitions
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IR2131
50
50
480V
480V
45
40
320V
35
160V
30
0V
Junction Temperature (°C)
Junction Temperature (°C)
45
25
40
320V
35
160V
30
0V
25
20
1E+2
1E+3
1E+4
20
1E+2
1E+5
1E+3
Frequency (Hz)
1E+4
1E+5
Frequency (Hz)
Figure 8. IR2131 TJ vs. Frequency (IRF830)
Ω, VCC = 15V
RGATE = 20Ω
Figure 7. IR2131 TJ vs. Frequency (IRF820)
Ω, VCC = 15V
RGATE = 33Ω
100
140
480V
320V
60
480V
320V
40
100
80
160V
60
0V
160V
0V
20
1E+2
Junction Temperature (°C)
Junction Temperature (°C)
120
80
1E+3
1E+4
1E+5
Frequency (Hz)
Figure 9. IR2131 TJ vs. Frequency (IRF840)
Ω, VCC = 15V
RGATE = 15Ω
B-164 CONTROL INTEGRATED CIRCUIT DESIGNERS’ MANUAL
40
20
1E+2
1E+3
1E+4
Frequency (Hz)
Figure 10. IR2131 TJ vs. Frequency (IRF450)
Ω, VCC = 15V
RGATE = 10Ω
To Order
1E+5