Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.036D IR2127 CURRENT SENSING SINGLE CHANNEL DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout n 5V Schmitt-triggered input logic n FAULT lead indicates shutdown has occured n Output in phase with input VOFFSET 600V max. IO+/- 200 mA / 420 mA VOUT 10 - 20V VCSth 250 mV ton/off (typ.) 150 & 100 ns Description The IR2127 is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs. The protection circuity detects over-current in the driven power transistor and terminates the gate drive voltage. An open drain FAULT signal is provided to indicate that an over-current shutdown has occurred. The output driver features a high pulse current buffer stage designed for minimum crossconduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side or low side configuration which operates up to 600 volts. Packages Typical Connection V CC IN FAULT VCC VB IN HO FAULT CS COM To Order VS CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-123 Previous Datasheet Index Next Data Sheet IR2127 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol Parameter Definition Value Min. Max. VB High Side Floating Supply Voltage -0.3 625 VS High Side Floating Offset Voltage VB - 25 VB + 0.3 VHO High Side Floating Output Voltage VS - 0.3 VB + 0.3 VCC Logic Supply Voltage -0.3 25 VIN Logic Input Voltage -0.3 VCC + 0.3 VFLT FAULT Output Voltage -0.3 VCC + 0.3 VCS Current Sense Voltage VS - 0.3 VB + 0.3 dVs/dt Allowable Offset Supply Voltage Transient PD Package Power Dissipation @ TA ≤ +25°C RθJA Thermal Resistance, Junction to Ambient — 50 (8 Lead DIP) — 1.0 (8 Lead SOIC) — 0.625 (8 Lead DIP) — 125 (8 Lead SOIC) — 200 TJ Junction Temperature — 150 TS Storage Temperature -55 150 TL Lead Temperature (Soldering, 10 seconds) — 300 Units V V/ns W °C/W °C Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential. Symbol Parameter Definition Value Min. Max. VB High Side Floating Supply Voltage VS + 10 VS + 20 VS High Side Floating Offset Voltage Note 1 600 VHO High Side Floating Output Voltage VS VB VCC Logic Supply Voltage VIN Logic Input Voltage 11.8 20 0 VCC VFLT FAULT Output Voltage 0 VCC VCS Current Sense Signal Voltage VS VS + 5 Ambient Temperature -40 125 TA Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. B-124 CONTROL INTEGRATED C IRCUIT DESIGNERS MANUAL To Order Units V °C Previous Datasheet Index Next Data Sheet IR2127 Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3. Symbol Parameter Definition Value Min. Typ. Max. Units Test Conditions ton Turn-On Propagation Delay — 150 200 VS = 0V toff Turn-Off Propagation Delay — 100 150 VS = 600V tr Turn-On Rise Time — 80 120 tf Turn-Off Fall Time — 40 60 900 t bl Start-Up Blanking Time 500 750 t cs CS Shutdown Propagation Delay — 240 360 tflt CS to FAULT Pull-Up Propagation Delay — 340 510 ns Static Electrical Characteristics VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to VS . Symbol Parameter Definition VIH Logic “1” Input Voltage VIL Logic “0” Input Voltage VCSTH+ CS Input Positive Going Threshold Value Min. Typ. Max. Units Test Conditions 2.7 — — V VCC = 10V to 20V — — 0.8 VCC = 10V to 20V 180 250 320 VCC = 10V to 20V VOH High Level Output Voltage, VBIAS - VO — — 100 mV IO = 0A VOL Low Level Output Voltage, VO — — 100 IO = 0A I LK Offset Supply Leakage Current — — 50 VB = VS = 600V IQBS Quiescent VBS Supply Current — 150 300 VIN = 0V or 5V IQCC Quiescent VCC Supply Current — 60 120 IIN+ Logic “1” Input Bias Current — 7.0 15 VIN = 0V or 5V µA VIN = 5V IIN- Logic “0” Input Bias Current — — 1.0 VIN = 0V ICS+ “High” CS Bias Current — — 1.0 VCS = 3V I CS- “High” CS Bias Current — — 1.0 VCS = 0V VBSUV+ VBS Supply Undervoltage Positive Going Threshold 8.8 10.3 11.8 VBSUV- VBS Supply Undervoltage Negative Going Threshold 7.5 9.0 10.6 I O+ Output High Short Circuit Pulsed Current 200 250 — IO- Output Low Short Circuit Pulsed Current 420 500 — To Order V mA VO = 0V, VIN = 5V PW ≤ 10 µs VO = 15V, VIN = 0V PW ≤ 10 µs CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-125 Previous Datasheet Index Next Data Sheet IR2127 Functional Block Diagram VB VCC UV DETECT UP SHIFTERS HV LEVEL SHIFT PULSE FILTER R Q BUFFER R HO S IN PULSE GEN VB VS DELAY PULSE GEN FAULT Q R S PULSE FILTER Q DOWN SHIFTER R S COM Lead Definitions Lead Symbol Description VCC IN FAULT COM VB HO VS CS Logic and gate drive supply Logic input for gate driver output (HO), in phase with HO Indicates over-current shutdown has occurred, negative logic Logic ground High side floating supply High side gate drive output High side floating supply return Current sense input to current sense comparator Lead Assignments 8 Lead DIP SO-8 IR2127 IR2127S B-126 CONTROL INTEGRATED C IRCUIT DESIGNERS MANUAL To Order + CS Previous Datasheet Index Next Data Sheet IR2127 Device Information Process & Design Rule Transistor Count Die Size Die Outline Thickness of Gate Oxide Connections First Layer Second Layer Contact Hole Dimension Insulation Layer Passivation Method of Saw Method of Die Bond Wire Bond Leadframe Package HVDCMOS 4.0 µm 206 77 X 85 X 26 (mil) Material Width Spacing Thickness Material Width Spacing Thickness Material Thickness Material Thickness Method Material Material Die Area Lead Plating Types Materials 800Å Poly Silicon 4 µm 6 µm 5000Å Al - Si (Si: 1.0% ±0.1%) 6 µm 7 µm 20,000Å 8 µm X 8 µm PSG (SiO2) 1.5 µm PSG (SiO2) 1.5 µm Full Cut Ablebond 84 - 1 Thermo Sonic Au (1.0 mil / 1.3 mil) Cu Ag Pb : Sn (37 : 63) 8 Lead PDIP / SO-8 EME6300 / MP150 / MP190 Remarks: To Order CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-127 Previous Datasheet Index Next Data Sheet IR2127 IN CS 50% 50% IN FAULT ton tr toff 90% HO HO Figure 1. Input/Output Timing Diagram tf 90% 10% 10% Figure 2. Switching Time Waveform Definition 50% IN tbl CS VCSTH CS 90% t cs HO HO 90% FAULT Figure 3. Start-up Blanking Time Waveform Definitions Figure 4. CS Shutdown Waveform Definitions VCSTH CS tflt FAULT 90% Figure 5. CS to FAULT Waveform Definitions B-128 CONTROL INTEGRATED C IRCUIT DESIGNERS MANUAL To Order