isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4746 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed APPLICATIONS ·Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Collector Current- Continuous 8 A Collector Current-Surge 20 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ IC IC(surge) Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4746 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.4A 1.5 V ICES Collector Cutoff Current VCE= 1500V ; RBE= 0 500 μA hFE DC Current Gain IC= 1A ; VCE= 5V Fall Time ICP= 7A , IB1= 1.4A tf isc Website：www.iscsemi.cn CONDITIONS MIN MAX UNIT 800 V 6 V B B 2 TYP. 8 38 0.5 μs INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Website：www.iscsemi.cn isc Product Specification 2SC4746