ISC 2SC4744

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SC4744
DESCRIPTION
·High Breakdown Voltage: VCBO= 1500V (Min)
·High Switching Speed
·Built-in Damper Diode
APPLICATIONS
·Designed for character display horizontal deflection
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
1500
V
VCES
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
6
V
IC(peak)
Collector Current-Peak
7
A
IC(surge)
Collector Current-Surge
16
A
ID
C-E Diode Forward Current
7
A
PC
Collector Power Dissipation
@ TC=25℃
50
W
TJ
Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SC4744
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 400mA ; IC= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 1.25A
2.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 1.25A
1.5
V
ICES
Collector Cutoff Current
VCE= 1500V ; RBE= 0
500
μA
hFE
DC Current Gain
IC= 1A ; VCE= 5V
25
VECF
C-E Diode Forward Voltage
IF= 6A
2.0
V
Fall Time
ICP= 5A , IB1= 1A; IB2= -2A
0.4
μs
tf
isc Website:www.iscsemi.cn
B
B
2
6
UNIT
V
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Website:www.iscsemi.cn
isc Product Specification
2SC4744