VISHAY SIA436DJ

New Product
SiA436DJ
Vishay Siliconix
N-Channel 8 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω) Max.
ID (A)a
0.0094 at VGS = 4.5 V
12
0.0105 at VGS = 2.5 V
12
0.0125 at VGS = 1.8 V
12
0.0180 at VGS = 1.5 V
12
0.0360 at VGS = 1.2 V
12
VDS (V)
8
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
15 nC
APPLICATIONS
• Load Switch for Portable Applications such as Smart
Phones, Tablet PCs and Mobile Computing
- Low Voltage Gate Drive
- Low Voltage Drop
- Power Switch for ICs
PowerPAK SC-70-6L-Single
D
1
Marking Code
D
2
D
AOX
3
6
Part # code
G
D
5
Lot Traceability
and Date code
S
D
2.05 mm
S
G
XXX
2.05 mm
S
4
Ordering Information: SiA436DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IDM
Pulsed Drain Current (t = 300 µs)
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Continuous Source-Drain Diode Current
Soldering Recommendations (Peak Temperature)
ID
d, e
IS
PD
TJ, Tstg
Limit
8
±5
12a
12a
12a, b, c
12a, b, c
50
12a
2.9b, c
19
12
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
RthJA
t≤5s
28
36
Maximum Junction-to-Ambientb, f
°C/W
RthJC
5.3
6.5
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 63535
S11-2242-Rev. A, 14-Nov-11
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA436DJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
8
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 5 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State
Resistancea
a
Forward Transconductance
RDS(on)
gfs
V
11
mV/°C
- 2.5
0.35
0.8
V
± 100
nA
VDS = 8 V, VGS = 0 V
1
VDS = 8 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 4.5 V
20
µA
A
VGS = 4.5 V, ID = 15.7 A
0.0078
0.0094
VGS = 2.5 V, ID = 14.9 A
0.0087
0.0105
VGS = 1.8 V, ID = 13.6 A
0.0104
0.0125
VGS = 1.5 V, ID = 2.5 A
0.0120
0.0180
VGS = 1.2 V, ID = 1.5 A
0.0180
0.0360
VDS = 4 V, ID = 15.7 A
70
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
1508
VDS = 4 V, VGS = 0 V, f = 1 MHz
535
VDS = 4 V, VGS = 5 V, ID = 15.7 A
16.8
25.2
15
23
321
tr
tf
td(off)
tf
nC
0.9
f = 1 MHz
VDD = 4 V, RL = 0.4 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
td(on)
tr
1.7
VDS = 4 V, VGS = 4.5 V, ID = 15.7 A
td(on)
td(off)
pF
VDD = 4 V, RL = 0.4 Ω
ID ≅ 10 A, VGEN = 5 V, Rg = 1 Ω
0.5
2.5
5
11
20
10
20
30
45
8
16
10
20
10
20
30
45
8
16
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
TC = 25 °C
12
50
IS = 10 A, VGS = 0 V
A
0.73
1.2
Body Diode Reverse Recovery Time
trr
10
20
ns
Body Diode Reverse Recovery Charge
Qrr
1
4
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C
4
6
V
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 63535
S11-2242-Rev. A, 14-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA436DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
50
VGS = 5 V thru 2 V
VGS = 1.5 V
15
ID - Drain Current (A)
ID - Drain Current (A)
40
30
20
TC = 25 °C
10
TC = 125 °C
5
VGS = 1 V
10
TC = - 55 °C
0
0
0
0.5
1
1.5
0
2
0.3
0.6
0.9
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
1.2
Transfer Characteristics
0.025
2050
VGS = 1.2 V
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
1640
0.02
VGS = 1.5 V
0.015
VGS = 1.8 V
0.01
Ciss
1230
VGS = 2.5 V
820
Coss
410
Crss
VGS = 4.5 V
0.005
0
0
10
20
30
40
50
0
2
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
6
8
Capacitance
5
1.5
RDS(on) - On-Resistance (Normalized)
ID = 15.7 A
VGS - Gate-to-Source Voltage (V)
4
VDS - Drain-to-Source Voltage (V)
4
VDS = 2 V
3
VDS = 4 V
2
VDS = 6.4 V
1
0
0
5
10
15
20
VGS = 4.5 V
ID = 15.7 A
1.3
VGS = 2.5 V
1.1
0.9
0.7
- 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63535
S11-2242-Rev. A, 14-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA436DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.025
10
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 15.7 A
TJ = 150 °C
TJ = 25 °C
1
0.02
0.015
TJ = 125 °C
0.01
TJ = 25 °C
0.005
0.1
0.0
0.2
0.4
0.6
0.8
0
1.0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.7
30
25
0.55
Power (W)
VGS(th) (V)
20
ID = 250 μA
0.4
15
10
0.25
5
0.1
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
TJ - Temperature (°C)
Threshold Voltage
1
Time (s)
10
100
1000
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
100 μs
ID - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1 s, 10 s
DC
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
10
Safe Operating Area, Junction-to-Ambient
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Document Number: 63535
S11-2242-Rev. A, 14-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA436DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
42
ID - Drain Current (A)
32
21
Package Limited
11
0
0
25
50
75
100
TC - Case Temperature (°C)
125
150
0
25
24
2.0
18
1.5
Power (W)
Power (W)
Current Derating*
12
6
1.0
0.5
0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
125
Power Derating, Junction-to-Case
150
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63535
S11-2242-Rev. A, 14-Nov-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA436DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 80 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
4. Surface Mounted
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.0001
Single Pulse
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63535.
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Document Number: 63535
S11-2242-Rev. A, 14-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
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Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
2.200 (0.087)
1.500
(0.059)
0.870 (0.034)
0.235 (0.009)
0.355 (0.014)
0.350 (0.014)
1
0.650 (0.026)
0.300 (0.012)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70486
Revision: 21-Jan-08
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000