VISHAY SIR812DP-T1-GE3

New Product
SiR812DP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) () Max.
ID (A)a
0.00145 at VGS = 10 V
60
0.00165 at VGS = 4.5 V
60
VDS (V)
30
Qg (Typ.)
109 nC
APPLICATIONS
PowerPAK® SO-8
6.15 mm
•
•
•
•
5.15 mm
S
1
S
2
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
S
3
Motor Control
Industrial
Load Switch
ORing
D
G
4
D
8
D
7
D
6
D
G
5
Bottom View
Ordering Information:
SiR812DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L =0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Temperature)d, e
Unit
V
60a
60a
48.9b, c
39b, c
100
IDM
Pulsed Drain Current (t = 300 µs)
Soldering Recommendations (Peak
Limit
30
± 20
60a
5.6b, c
25
31.2
104
66.6
A
mJ
6.25b, c
4b, c
- 55 to 150
260
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t  10 s
Steady State
Symbol
RthJA
RthJC
Typical
15
0.9
Maximum
20
1.2
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 54 °C/W.
Document Number: 63551
S12-0212-Rev. A, 30-Jan-12
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiR812DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
V
34
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
2.3
V
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS 5 V, VGS = 10 V
- 5.7
1
50
A
VGS = 10 V, ID = 20 A
0.00110 0.00145
VGS = 4.5 V, ID = 20 A
0.00135 0.00165
VDS = 15 V, ID = 20 A
µA
121

S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
10 240
VDS = 15 V, VGS = 0 V, f = 1 MHz
1180
VDS = 15 V, VGS = 10 V, ID = 20 A
VDS = 15 V, VGS = 4.5 V, ID = 20 A
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDD = 15 V, RL = 0.75 
ID  20 A, VGEN = 10 V, Rg = 1 
22.8
0.3
1.05
2
15
30
16
32
80
150
20
40
43
80
102
180
70
120
32
60
VDD = 15 V, RL = 0.75 
ID  20 A, VGEN = 4.5 V, Rg = 1 
tf
Fall Time
164
tf
td(off)
Turn-Off Delay Time
335
109
td(on)
tr
Rise Time
223
nC
43.3
f = 1 MHz
td(on)
Turn-On Delay Time
pF
1130

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
a
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
TC = 25 °C
60
100
IS = 5 A
0.68
1.1
A
V
Body Diode Reverse Recovery Time
trr
38
76
ns
Body Diode Reverse Recovery Charge
Qrr
23
46
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C
17
21
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 63551
S12-0212-Rev. A, 30-Jan-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiR812DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
100
VGS = 10 V thru 3 V
8
ID - Drain Current (A)
ID - Drain Current (A)
80
60
40
6
4
TC = 25 °C
2
20
TC = 125 °C
0
0.0
0.5
1.0
1.5
2.0
0
0
2.5
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0015
15 000
0.0014
12 000
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
TC = - 55 °C
VGS = 2 V
VGS = 4.5 V
0.0013
0.0012
5
Ciss
9000
6000
Coss
0.0011
3000
VGS = 10 V
Crss
0.0010
0
0
10
20
30
40
50
0
5
15
20
25
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
30
1.8
ID = 20 A
RDS(on) - On-Resistance (Normalized)
ID = 20 A
VGS - Gate-to-Source Voltage (V)
10
ID - Drain Current (A)
8
VDS = 15 V
6
VDS = 10 V
4
VDS = 20 V
2
0
0
50
100
150
200
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 63551
S12-0212-Rev. A, 30-Jan-12
250
1.6
VGS = 10 V
1.4
1.2
VGS = 4.5 V
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiR812DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.005
ID = 20 A
0.004
TJ = 150 °C
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
TJ = 25 °C
1
0.1
0.01
0.001
0.003
TJ = 25 °C
0.001
0.000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
0
4
6
8
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
2
10
200
0.2
160
0
Power (W)
VGS(th) - Variance (V)
TJ = 125 °C
0.002
- 0.2
ID = 5 mA
120
80
- 0.4
ID = 250 μA
40
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
100
IDM Limited
1 ms
ID - Drain Current (A)
10
ID Limited
10 ms
Limited by RDS(on)*
1
100 ms
1s
0.1
10 s
TA = 25 °C
Single Pulse
0.01
0.01
DC
BVDSS Limited
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Ambient
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Document Number: 63551
S12-0212-Rev. A, 30-Jan-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiR812DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
220
ID - Drain Current (A)
176
132
88
Limited by Package
44
0
0
25
50
75
100
125
150
0
25
TC - Case Temperature (°C)
125
3.0
100
2.4
75
1.8
Power (W)
Power (W)
Current Derating*
50
1.2
0.6
25
0.0
0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Case
125
150
50
75
100
125
150
TA - Case Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63551
S12-0212-Rev. A, 30-Jan-12
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiR812DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 54 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
0.0001
Single Pulse
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63551.
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Document Number: 63551
S12-0212-Rev. A, 30-Jan-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8, (Single/Dual)
L
H
E2
K
E4
θ
D4
W
1
M
1
Z
2
D5
D2
e
2
D1
D
2
D
3
4
θ
4
b
3
L1
E3
θ
A1
Backside View of Single Pad
H
K
E2
E4
L
1
D1
D5
2
D2
Detail Z
K1
2
E1
E
D3 (2x) D4
c
A
θ
3
4
Notes
1. Inch will govern.
2 Dimensions exclusive of mold gate burrs.
3. Dimensions exclusive of mold flash and cutting burrs.
E3
Backside View of Dual Pad
MILLIMETERS
DIM.
MIN.
A
0.97
A1
b
0.33
c
0.23
D
5.05
D1
4.80
D2
3.56
D3
1.32
D4
D5
E
6.05
E1
5.79
E2 (for AL product)
3.30
E2 (for other product)
3.48
E3
3.68
E4 (for AL product)
E4 (for other product)
e
K (for AL product)
K (for other product)
K1
0.56
H
0.51
L
0.51
L1
0.06

0°
W
0.15
M
ECN: C13-0702-Rev. K, 20-May-13
DWG: 5881
Revison: 20-May-13
b
D2
INCHES
NOM.
MAX.
MIN.
NOM.
MAX.
1.04
0.41
0.28
5.15
4.90
3.76
1.50
0.57 typ.
3.98 typ.
6.15
5.89
3.48
3.66
3.78
0.58 typ.
0.75 typ.
1.27 BSC
1.45 typ.
1.27 typ.
0.61
0.61
0.13
0.25
0.125 typ.
1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68
0.038
0
0.013
0.009
0.199
0.189
0.140
0.052
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
6.25
5.99
3.66
3.84
3.91
0.238
0.228
0.130
0.137
0.145
0.71
0.71
0.20
12°
0.36
0.022
0.020
0.020
0.002
0°
0.006
0.041
0.016
0.011
0.203
0.193
0.148
0.059
0.0225 typ.
0.157 typ.
0.242
0.232
0.137
0.144
0.149
0.023 typ.
0.030 typ.
0.050 BSC
0.057 typ.
0.050 typ.
0.024
0.024
0.005
0.010
0.005 typ.
1
0.246
0.236
0.144
0.151
0.154
0.028
0.028
0.008
12°
0.014
Document Number: 71655
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single
0.260
(6.61)
0.150
(3.81)
0.050
0.174
(4.42)
0.154
(1.27)
0.026
(0.66)
(3.91)
0.024
(0.61)
0.050
0.032
0.040
(1.27)
(0.82)
(1.02)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72599
Revision: 21-Jan-08
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15
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000