BC807, BC808 PNP Silicon AF Transistors 3 For general AF applications High collector current High current gain Low collector-emitter saturation voltage 2 Comlementary types: BC817, BC818 (NPN) 1 Type Marking Pin Configuration BC807-16 5As 1=B 2=E 3=C SOT23 BC807-25 5Bs 1=B 2=E 3=C SOT23 BC807-40 5Cs 1=B 2=E 3=C SOT23 BC808-16 5Es 1=B 2=E 3=C SOT23 BC808-25 5Fs 1=B 2=E 3=C SOT23 BC808-40 5Gs 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BC807 BC808 VCEO 45 25 Collector-base voltage VCBO 50 30 Emitter-base voltage VEBO 5 5 DC collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 79 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg 500 1 V mA A mA -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 215 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BC807, BC808 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC807 45 - - BC808 25 - - BC807 50 - - BC808 30 - - V(BR)EBO 5 - - ICBO - - 100 nA ICBO - - 50 µA IEBO - - 100 nA Collector-base breakdown voltage IC = 10 µA, IE = 0 V V(BR)CEO V(BR)CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 mA, VCE = 1 V - hFE h FE-grp. 16 100 160 250 h FE-grp. 25 160 250 400 h FE-grp. 40 250 350 630 40 - - VCEsat - - 0.7 VBEsat - - 1.2 DC current gain 1) hFE IC = 500 mA, VCE = 1 V Collector-emitter saturation voltage1) V IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 500 mA, IB = 50 mA 1) Pulse test: t ≤ 300µs, D = 2% 2 Nov-29-2001 BC807, BC808 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. fT - 200 - MHz Ccb - 10 - pF Ceb - 60 - AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz 3 Nov-29-2001 BC807, BC808 Transition frequency fT = f (IC) Total power dissipation Ptot = f(TS) VCE = 5V EHP00210 10 3 360 mW fT MHz 300 5 P tot 270 240 210 10 2 180 150 5 120 90 60 30 0 0 15 30 45 60 75 90 105 120 10 1 10 0 °C 150 TS 10 1 10 2 mA ΙC Permissible pulse load Collector cutoff current ICBO = f(TA) Ptotmax / PtotDC = f (tp ) VCBO = 25V EHP00212 10 3 Ptot max Ptot DC tp D= T tp Ι CBO 10 1 max 10 3 typ 10 2 5 10 0 10 -6 nA 10 4 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 EHP00213 10 5 T 10 2 10 3 10 1 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 tp 0 50 100 ˚C 150 TA 4 Nov-29-2001 BC807, BC808 Base-emitter saturation voltage Collector-emitter saturation voltage IC = f(VBEsat ), hFE = 10 IC = f (VCEsat), h FE = 10 EHP00214 10 3 ΙC mA ΙC 150 ˚C 25 ˚C -50 ˚C 10 2 mA 5 10 1 10 1 5 5 10 0 10 0 5 5 0 1.0 150 ˚C 25 ˚C -50 ˚C 10 2 5 10 -1 EHP00215 10 3 2.0 3.0 V 10 -1 4.0 0 0.2 0.4 0.6 V 0.8 V CEsat V BEsat DC current gain hFE = f(IC) VCE = 1V EHP00216 10 3 h FE 5 100 ˚C 25 ˚C -50 ˚C 10 2 5 10 1 5 10 0 10 -1 10 0 10 1 10 2 mA 10 3 ΙC 5 Nov-29-2001