IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package 2N6486, 2N6487, 2N6488 2N6489, 2N6490, 2N6491 2N6486, 6487, 6488 2N6489, 6490, 6491 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR Boca Semiconductor Corp. BSC B 1 2 C E DIM MIN . A B C D E F G H J K L M N O 14.42 9.63 3.56 A O 3 K All dimin sions in mm. L N 1 2 O H F J D G 4 M 3 MAX. 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DEG 7 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 5 A; IB = 0.5 A D.C. current gain IC = 5 A; VCE = 4 V VCBO VCEO IC Ptot Tj 6486 6487 6488 6489 6490 6491 max. 50 70 90 max. 40 60 80 max. 15 max. 75 max. 150 V V A W °C VCEsat max. 1.3 V hFE min. max. 20 150 RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO http://www.bocasemi.com Continental Device India Limited Data Sheet 6486 6487 6488 6489 6490 6491 max. 50 70 90 max. 40 60 80 max. 5.0 V V V page: 1 Page 1 of 3 2N6486, 2N6487, 2N6488 2N6489, 2N6490, 2N6491 Collector current Base current Total power dissipation up to TC = 25°C Derate above 25°C Total power dissipation up to TA = 25°C Derate above 25°C Junction temperature Storage temperature IC IB P tot Tj T stg THERMAL RESISTANCE From junction to ambient From junction to case R th j–a R th j–c P tot max. max. max. max. max. max. max. CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IB = 0; VCE = 20 V IB = 0; VCE = 30 V IB = 0; VCE = 40 V VEB(off) = 1.5 V; VCE = 45 V VEB(off) = 1.5 V; VCE = 65 V VEB(off) = 1.5 V; VCE = 85 V VEB(off) = 1.5 V; VCE = 40 V; VEB(off) = 1.5 V; VCE = 60 V; VEB(off) = 1.5 V; VCE = 80 V; Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 200 mA; IB = 0 IC = 1 mA; IE = 0 IC = 200 mA; VBE = 1.5 V IE = 1 mA; IC = 0 Saturation voltages IC = 5 A; IB = 0.5 A IC = 15 A; IB = 5 A Base-emitter on voltage IC = 5 A; VCE = 4 V IC = 15 A; VCE = 4 V D.C. current gain IC = 5 A; VCE = 4 V A A W W/°C W W/°C °C °C 70 1.67 °C/W °C/W 6486 6487 6488 6489 6490 6491 ICEO ICEO ICEO ICEX ICEX ICEX TC=150°C ICEX TC=150°C ICEX TC=150°C ICEX IC = 15 A; VCE = 4 V Transition frequency IC = 1 A; VCE = 4 V; f = 1 MHz Small signal current gain IC = 1.0A; VCE = 4V; f = 1.0 KHz 15 5.0 75 0.6 1.8 0.014 150 –65 to +150 max. 1.0 max. – max. – max. 500 max. – max. – max. 5.0 max. – max. – – 1.0 – – 500 – – 5.0 – – – 1.0 – – 500 – – 5.0 mA mA mA µA µA µA mA mA mA IEBO max. 1.0 VCEO(sus)* VCBO VCEX(sus)* VEBO min. 40 min. 50 min. 50 min. 60 70 70 5.0 VCEsat* VCEsat* max. max. 1.3 3.5 V V VBE(on)* VBE(on)* max. max. 1.3 3.5 V V hFE* min. max. 20 150 hFE* min. 5.0 fT(1) min. 5.0 hfe min. 25 mA 80 90 90 V V V V MHz * Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2% (1) fT = |hfe|• ftest http://www.bocasemi.com Continental Device India Limited Data Sheet page: 2 Page 2 of 3