BC817, BC818 NPN Silicon AF Transistors 3 For general AF applications High collector current High current gain Low collector-emitter saturation voltage 2 Complementary types: BC807, BC808 (PNP) 1 Type Marking Pin Configuration BC817-16 6As 1=B 2=E 3=C SOT23 BC817-25 6Bs 1=B 2=E 3=C SOT23 BC817-40 6Cs 1=B 2=E 3=C SOT23 BC818-16 6Es 1=B 2=E 3=C SOT23 BC818-25 6Fs 1=B 2=E 3=C SOT23 BC818-40 6Gs 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BC817 BC818 VCEO 45 25 Collector-base voltage VCBO 50 30 Emitter-base voltage VEBO 5 5 DC collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 79 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg 500 1 V mA A mA -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 215 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BC817, BC818 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC817 45 - - BC818 25 - - BC817 50 - - BC818 30 - - V(BR)EBO 5 - - ICBO - - 100 nA ICBO - - 50 µA IEBO - - 100 nA Collector-base breakdown voltage IC = 10 µA, IE = 0 V V(BR)CEO V(BR)CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 mA, VCE = 1 V hFE-grp.16 100 160 250 hFE-grp.25 160 250 400 hFE-grp.40 250 350 630 hFE-grp.16 60 - - hFE-grp.25 100 - - hFE-grp.40 170 - - DC current gain 1) IC = 300 mA, VCE = 1 V - hFE hFE Collector-emitter saturation voltage1) VCEsat - - 0.7 IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) VBEsat - - 1.2 V IC = 500 mA, IB = 50 mA 1) Pulse test: t ≤ 300µs, D = 2% 2 Nov-29-2001 BC817, BC818 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. fT - 170 - MHz Ccb - 6 - pF Ceb - 60 - AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz 3 Nov-29-2001 BC817, BC818 Transition frequency fT = f (IC) Total power dissipation Ptot = f(TS) VCE = 5V 10 3 360 mW fT BC 817/818 EHP00218 MHz 300 5 P tot 270 240 210 10 2 180 150 5 120 90 60 30 0 0 15 30 45 60 75 90 105 120 10 1 10 0 °C 150 TS 10 1 10 2 mA ΙC Permissible pulse load Collector cutoff current ICBO = f (T A) Ptotmax / PtotDC = f (tp ) VCBO = 25V 10 3 BC 817/818 Ptot max Ptot DC EHP00220 D= tp T 10 5 tp Ι CBO D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 EHP00221 nA max 10 3 typ 10 2 5 10 0 10 -6 BC 817/818 10 4 T 10 2 10 3 10 1 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 tp 0 50 100 ˚C 150 TA 4 Nov-29-2001 BC817, BC818 Base-emitter saturation voltage Collector-emitter saturation voltage IC = f(VBEsat ), hFE = 10 IC = f (VCEsat), h FE = 10 10 3 ΙC BC 817/818 EHP00222 mA ΙC 150 ˚C 25 ˚C -50 ˚C 10 2 10 3 10 1 10 1 5 5 10 0 10 0 5 5 1.0 150 ˚C 25 ˚C -50 ˚C 10 2 5 0 EHP00223 mA 5 10 -1 BC 817/818 2.0 3.0 V 10 -1 4.0 V BEsat 0 0.2 0.4 0.6 V 0.8 VCEsat DC current gain hFE = f(IC) VCE = 1V 10 3 h FE 5 BC 817/818 EHP00224 100 ˚C 25 ˚C -50 ˚C 10 2 5 10 1 5 10 0 10 -1 10 0 10 1 10 2 mA 10 3 ΙC 5 Nov-29-2001