IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package TIP31, TIP31A, TIP31B, TIP31C TIP32, TIP32A, TIP32B, TIP32C Boca Semiconductor Corp. TIP31, 31A, 31B, 31C TIP32, 32A, 32B, 32C (BSC) NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 C E F K All dim insions in m m . L N O 1 2 3 O A H B J D G M DIM M IN. A B C D E F G H J K L M N O 14.42 9.63 3.56 3 M A X. 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DE G 7 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 3 A; IB = 375 mA D.C. current gain IC = 3 A; VCE = 4 V VCBO VCEO IC Ptot Tj 31 32 max. 40 max. 40 max. max. max. VCEsat max. 1.2 hFE min. max. 10 50 RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO 31 32 max. 40 max. 40 max. http://www.bocasemi.com Continental Device India Limited Data Sheet 31A 31B 32A 32B 60 80 60 80 3.0 40 150 31A 31B 32A 32B 60 80 60 80 5.0 31C 32C 100 100 V V A W °C V 31C 32C 100 100 V V V page: 1 Page 1 of 3 TIP31, TIP31A, TIP31B, TIP31C TIP32, TIP32A, TIP32B, TIP32C Collector current Collector current (Peak) Base current Total power dissipation upto TC=25°C Derate above 25°C Total power dissipation upto T A=25°C Derate above 25°C Junction temperature Storage temperature THERMAL RESISTANCE From junction to case From junction to ambient IC ICM IB Ptot Ptot Tj Tstg max. max. max. max. max max. max max. Rth j–c Rth j–a CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IB = 0; VCE = 30V IB = 0; VCE = 60V VBE = 0; VCE = VCEO(max) Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 30 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltage IC = 3 A; IB = 375 mA Base emitter on voltage IC = 3 A; VCE = 4 V D.C. current gain IC = 1 A; VCE = 4 V IC = 3 A; VCE = 4 V Small-signal current gain IC = 0.5A; VCE = 10V; f = 1 KHz Transition frequency IC = 0.5A; VCE = 10V; f = 1 MHz 3.0 5.0 1.0 40 0.32 2 0.016 150 –65 to +150 A A A W W/°C W W/°C °C ºC 3.125 62.5 °C/W °C/W 31 31A 31B 31C 32 32A 32B 32C ICEO ICEO ICES max. 0.3 max. – max. 0.3 – – 0.3 0.2 – 0.3 IEBO max. VCEO(sus)* VCBO VEBO min. 40 min. 40 min. VCEsat* max. 1.2 V VBE(on)* max. 1.8 V hFE* min. 25 hFE* min. max. 10 50 |h fe | min. 20 fT (1) min. 3 1.0 60 60 5.0 mA mA mA mA 80 80 100 100 V V V MHz * Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%. (1) fT = |hfe|• ftest http://www.bocasemi.com Continental Device India Limited Data Sheet page: 2 Page 2 of 3