POINN TIP122

TIP120, TIP121, TIP122
NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
●
DECEMBER 1971 - REVISED MARCH 1997
Designed for Complementary Use with
TIP125, TIP126 and TIP127
TO-220 PACKAGE
(TOP VIEW)
●
65 W at 25°C Case Temperature
●
5 A Continuous Collector Current
B
1
●
Minimum hFE of 1000 at 3 V, 3 A
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
TIP120
Collector-base voltage (IE = 0)
TIP121
Emitter-base voltage
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
60
VCEO
TIP122
Continuous collector current
80
100
TIP120
TIP121
UNIT
60
VCBO
TIP122
Collector-emitter voltage (IB = 0)
VALUE
80
V
100
V EBO
5
V
IC
5
A
ICM
8
A
IB
0.1
A
Ptot
65
W
Ptot
2
W
½LIC 2
50
mJ
°C
Tj
-65 to +150
Tstg
-65 to +150
°C
TL
260
°C
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 0.52 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, R BE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIP120, TIP121, TIP122
NPN SILICON POWER DARLINGTONS
DECEMBER 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
V (BR)CEO
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE
VEC
TEST CONDITIONS
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
IC = 30 mA
IB = 0
(see Note 5)
80
TIP122
100
TIP120
0.5
TIP121
0.5
V CE = 50 V
IB = 0
TIP122
0.5
VCB = 60 V
IE = 0
TIP120
0.2
V CB = 80 V
IE = 0
TIP121
0.2
V CB = 100 V
IE = 0
TIP122
0.2
VEB =
IC = 0
5V
2
3V
IC = 0.5 A
3V
IC =
3A
Collector-emitter
IB = 12 mA
IC =
3A
saturation voltage
IB = 20 mA
IC =
5A
VCE =
3V
IC =
3A
IE =
5A
IB = 0
(see Notes 5 and 6)
UNIT
V
IB = 0
VCE =
forward voltage
TIP121
IB = 0
V CE =
Parallel diode
MAX
VCE = 30 V
transfer ratio
voltage
TYP
60
V CE = 40 V
Forward current
Base-emitter
MIN
TIP120
mA
mA
mA
1000
1000
2
(see Notes 5 and 6)
4
V
(see Notes 5 and 6)
2.5
V
(see Notes 5 and 6)
3.5
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
1.92
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
†
MIN
TYP
ton
Turn-on time
IC = 3 A
IB(on) = 12 mA
IB(off) = -12 mA
1.5
µs
toff
Turn-off time
V BE(off) = -5 V
RL = 10 Ω
tp = 20 µs, dc ≤ 2%
8.5
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
2
TEST CONDITIONS
INFORMATION
TIP120, TIP121, TIP122
NPN SILICON POWER DARLINGTONS
DECEMBER 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS120AA
40000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
10000
1000
VCE = 3 V
tp = 300 µs, duty cycle < 2%
100
0·5
1·0
5·0
TCS120AB
2·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
1·5
1·0
0·5
TC = -40°C
TC = 25°C
TC = 100°C
0
0·5
IC - Collector Current - A
1·0
5·0
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS120AC
VBE(sat) - Base-Emitter Saturation Voltage - V
3·0
2·5
TC = -40°C
TC = 25°C
TC = 100°C
2·0
1·5
1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
0·5
1·0
5·0
IC - Collector Current - A
Figure 3.
PRODUCT
INFORMATION
3
TIP120, TIP121, TIP122
NPN SILICON POWER DARLINGTONS
DECEMBER 1971 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
SAS120AA
IC - Collector Current - A
DC Operation
tp = 300 µs,
d = 0.1 = 10%
10
1·0
TIP120
TIP121
TIP122
0·1
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS120AA
Ptot - Maximum Power Dissipation - W
80
70
60
50
40
30
20
10
0
0
25
50
75
100
TC - Case Temperature - °C
Figure 5.
PRODUCT
4
INFORMATION
125
150
TIP120, TIP121, TIP122
NPN SILICON POWER DARLINGTONS
DECEMBER 1971 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
10,4
10,0
3,96
3,71
1,32
1,23
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
1,70
1,07
0,97
0,61
1
2
14,1
12,7
3
2,74
2,34
5,28
4,88
VERSION 1
0,64
0,41
2,90
2,40
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
PRODUCT
5
INFORMATION
MDXXBE
TIP120, TIP121, TIP122
NPN SILICON POWER DARLINGTONS
DECEMBER 1971 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT
6
INFORMATION