BD239D, BD239E, BD239F NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK ● 30 W at 25°C Case Temperature ● 2 A Continuous Collector Current ● 4 A Peak Collector Current ● Customer-Specified Selections Available SEPTEMBER 1981 - REVISED MARCH 1997 TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD239D Collector-emitter voltage (RBE = 100 Ω) BD239E VCER Emitter-base voltage Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V 120 VCEO BD239F Continuous collector current 180 200 BD239D BD239E UNIT 160 BD239F Collector-emitter voltage (IB = 0) VALUE 140 V 160 V EBO 5 V IC 2 A ICM 4 A IB 0.6 A Ptot 30 W Ptot 2 W ½LIC 2 32 mJ °C Tj -65 to +150 Tstg -65 to +150 °C TL 250 °C This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.24 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, R BE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BD239D, BD239E, BD239F NPN SILICON POWER TRANSISTORS SEPTEMBER 1981 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature PARAMETER V (BR)CEO ICES ICEO IEBO hFE VCE(sat) VBE hfe |hfe| TEST CONDITIONS Collector-emitter breakdown voltage Collector-emitter cut-off current Collector cut-off current Emitter cut-off current IC = 30 mA MIN IB = 0 (see Note 5) BD239D 120 BD239E 140 BD239F 160 TYP MAX UNIT V VCE = 160 V VBE = 0 BD239D 0.2 V CE = 180 V V BE = 0 BD239E 0.2 V CE = 200 V V BE = 0 BD239F 0.2 VCE = 90 V IB = 0 0.3 mA VEB = IC = 0 1 µA 5V mA Forward current VCE = 4V IC = 0.2 A transfer ratio V CE = 4V IC = 1Α (see Notes 5 and 6) 0.2 A IC = 1A (see Notes 5 and 6) 0.7 V 4V IC = 1A (see Notes 5 and 6) 1.3 V Collector-emitter saturation voltage Base-emitter IB = VCE = voltage Small signal forward current transfer ratio Small signal forward current transfer ratio 40 15 VCE = 10 V IC = 0.2 A f = 1 kHz 20 VCE = 10 V IC = 0.2 A f = 1 MHz 3 NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 4.17 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † † MIN TYP ton Turn-on time IC = 200 mA IB(on) = 20 mA IB(off) = -20 mA 0.3 µs toff Turn-off time V BE(off) = -3.4 V RL = 150 Ω tp = 20 µs, dc ≤ 2% 0.8 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2 TEST CONDITIONS INFORMATION BD239D, BD239E, BD239F NPN SILICON POWER TRANSISTORS SEPTEMBER 1981 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE = 4 V t p = 300 µs, duty cycle < 2% TC = 25°C TC = 80°C 100 10 0·01 0·1 IC = 100 mA IC = 300 mA IC = 1 A 1·0 0·1 0·01 0·1 1·0 TCS631AE 10 VCE(sat) - Collector-Emitter Saturation Voltage - V TCS631AG 1000 hFE - DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT IC - Collector Current - A 1·0 10 100 1000 IB - Base Current - mA Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1·0 TCS631AF VBE - Base-Emitter Voltage - V VCE = 4 V TC = 25°C 0·9 0·8 0·7 0·6 0·5 0·01 0·1 1·0 IC - Collector Current - A Figure 3. PRODUCT INFORMATION 3 BD239D, BD239E, BD239F NPN SILICON POWER TRANSISTORS SEPTEMBER 1981 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS631AF tp = 300 µs, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation 10 1·0 0·1 0·01 1·0 BD239D BD239E BD239F 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS631AB Ptot - Maximum Power Dissipation - W 40 30 20 10 0 0 25 50 75 100 TC - Case Temperature - °C Figure 5. PRODUCT 4 INFORMATION 125 150 BD239D, BD239E, BD239F NPN SILICON POWER TRANSISTORS SEPTEMBER 1981 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. PRODUCT MDXXBE INFORMATION 5 BD239D, BD239E, BD239F NPN SILICON POWER TRANSISTORS SEPTEMBER 1981 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT 6 INFORMATION