BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK ● AUGUST 1978 - REVISED MARCH 1997 Designed for Complementary Use with the BD744 Series TO-220 PACKAGE (TOP VIEW) ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current B 1 ● 20 A Peak Collector Current C 2 ● Customer-Specified Selections Available E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD743 Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) BD743A BD743B VALUE VCBO 70 90 BD743C 110 BD743 45 BD743A BD743B UNIT 50 VCEO BD743C 60 80 V V 100 V EBO 5 V IC 15 A ICM 20 A IB 5 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 90 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current ½LIC 2 90 mJ Operating free air temperature range TA -65 to +150 °C Operating junction temperature range Tj -65 to +150 °C Tstg -65 to +150 °C TL 250 °C Unclamped inductive load energy (see Note 4) Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, R BE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V (BR)CEO ICBO ICEO IEBO hFE VCE(sat) VBE hfe |hfe| TEST CONDITIONS Collector-emitter MIN 45 BD743A 60 BD743B 80 BD743C 100 TYP MAX IC = 30 mA IB = 0 VCE = 50 V VBE = 0 BD743 0.1 V CE = 70 V VBE = 0 BD743A 0.1 V CE = 90 V VBE = 0 BD743B 0.1 Collector cut-off V CE = 110 V VBE = 0 BD743C 0.1 current V CE = 50 V VBE = 0 TC = 125°C BD743 5 V CE = 70 V VBE = 0 TC = 125°C BD743A 5 V CE = 90 V VBE = 0 TC = 125°C BD743B 5 V CE = 110 V VBE = 0 TC = 125°C BD743C Collector cut-off VCE = 30 V IB = 0 BD743/743A 0.1 current V CE = 60 V IB = 0 BD743B/743C 0.1 VEB = 5V IC = 0 breakdown voltage Emitter cut-off current Forward current transfer ratio VCE = 4V IC = 1 A V CE = 4V IC = 5 A V CE = 4V IC = 15 A Collector-emitter IB = 0.5 A IC = 5 A saturation voltage IB = 5A IC = 15 A (see Note 5) BD743 0.5 20 mA 150 1 (see Notes 5 and 6) 3 VCE = 4V IC = 5 A 4V IC = 15 A VCE = 10 V IC = 1 A f = 1 kHz 25 VCE = 10 V IC = 1 A f = 1 MHz 5 current transfer ratio mA 5 V CE = Small signal forward mA 40 (see Notes 5 and 6) voltage current transfer ratio V 5 Base-emitter Small signal forward UNIT 1 (see Notes 5 and 6) 3 V V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.4 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † † MIN TYP td Delay time 20 ns tr Rise time IC = 5 A IB(on) = 0.5 A IB(off) = -0.5 A 350 ns ts Storage time V BE(off) = -4.2 V RL = 6 Ω tp = 20 µs, dc ≤ 2% 500 ns tf Fall time 400 ns Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2 TEST CONDITIONS INFORMATION BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT hFE - DC Current Gain TC = 125°C TC = 25°C TC = -55°C VCE = 4 V tp = 300 µs, duty cycle < 2% 10 0·1 1·0 10 100 TCS637AB 10 VCE(sat) - Collector-Emitter Saturation Voltage - V TCS637AA 100 IC = 10 IB tp = 300µs, duty cycle < 2% 1·0 0·1 TC = -55°C TC = 25°C TC = 125°C 0·01 0·1 1·0 IC - Collector Current - A 10 100 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT TCS637AC 10 VBE - Base-Emitter Voltage - V VCE = 4 V tp = 300µs, duty cycle < 2% 1·0 TC = -55°C TC = 25°C TC = 125°C 0·1 0·1 1·0 10 100 IC - Collector Current - A Figure 3. PRODUCT INFORMATION 3 BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS637AA tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% tp = 50 ms, d = 0.1 = 10% DC Operation 10 1·0 0·1 BD743 BD743A BD743B BD743C 0·01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS637AA Ptot - Maximum Power Dissipation - W 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 TC - Case Temperature - °C Figure 5. PRODUCT 4 INFORMATION 125 150 BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. PRODUCT MDXXBE INFORMATION 5 BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT 6 INFORMATION