TCET1100/TCET1100G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperarure FEATURES • Extra low coupling capacity - typical 0.2 pF • High common mode rejection • Low temperature coefficient of CTR C E 4 3 • CTR offered in 9 groups • Reinforced isolation provides circuit protection against electrical shock (safety class II) • Isolation materials according to UL94-VO 1 A • Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664) 2 C 17197_1 C • Climatic classification 55/100/21 (IEC 60068 part 1) V D E • Rated impulse VIOTM = 8 kVpeak voltage (transient overvoltage) • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV DESCRIPTION The TCET110. consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. • Rated isolation VIOWM = 600 VRMS voltage • Rated recurring VIORM = 848 Vpeak (RMS peak includes voltage DC) (repetitive) • Thickness through insulation ≥ 0.75 mm VDE STANDARDS • Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥ 175 These couplers perform safety functions according to the following equipment standards: • Lead (Pb)-free component • DIN EN 60747-5-5 Optocoupler for electrical safety requirements • IEC 60950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) • VDE 0804 Telecommunication apparatus and data processing • IEC 60065 Safety for mains-operated household apparatus electronic and related • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS • switch-mode power supplies • line receiver • computer peripheral interface • microprocessor system interface • Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage ≤ 300 V - for appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-5. AGENCY APPROVALS • UL1577, file no. E76222 system code U, double protection • CSA 22.2 bulletin 5A, double protection • BSI: EN 60065:2002, EN 60950:2000 certificate no. 7081 and 7402 • DIN EN 60747-5-5 • FIMKO www.vishay.com 810 For technical questions, contact: [email protected] Document Number: 83503 Rev. 2.2, 16-May-08 TCET1100/TCET1100G Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperarure ORDER INFORMATION PART REMARKS TCET1100 TCET1101 TCET1102 TCET1103 TCET1104 TCET1105 TCET1106 TCET1107 TCET1108 TCET1109 TCET1100G TCET1101G TCET1102G TCET1103G TCET1104G TCET1105G TCET1106G TCET1107G TCET1108G TCET1109G CTR 50 to 600 %, DIP-4 CTR 40 to 80 %, DIP-4 CTR 63 to 125 %, DIP-4 CTR 100 to 200 %, DIP-4 CTR 160 to 320 %, DIP-4 CTR 50 to 150 %, DIP-4 CTR 100 to 300 %, DIP-4 CTR 80 to 160 %, DIP-4 CTR 130 to 260 %, DIP-4 CTR 200 to 400 %, DIP-4 CTR 50 to 600 %, DIP-4 CTR 40 to 80 %, DIP-4 CTR 63 to 125 %, DIP-4 CTR 100 to 200 %, DIP-4 CTR 160 to 320 %, DIP-4 CTR 50 to 150 %, DIP-4 CTR 100 to 300 %, DIP-4 CTR 80 to 160 %, DIP-4 CTR 130 to 260 %, DIP-4 CTR 200 to 400 %, DIP-4 Note G = lead form 10.16 mm; G is not marked on the body ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA IFSM 1.5 A Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V tP ≤ 10 µs Forward surge current OUTPUT Collector current tP/T = 0.5, tP ≤ 10 ms Collector peak current IC 50 mA ICM 100 mA COUPLER Isolation test voltage (RMS) VISO 5000 VRMS Operating ambient temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 55 to + 125 °C Tsld 260 °C Soldering temperature t = 1 min 2 mm from case, ≤ 10 s Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices (DIP). Document Number: 83503 Rev. 2.2, 16-May-08 For technical questions, contact: [email protected] www.vishay.com 811 TCET1100/TCET1100G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperarure THERMAL CHARACTERISTICS (1) PARAMETER TEST CONDITION LED power dissipation Output power dissipation Maximum LED junction temperature Maximum output die junction temperature Thermal resistance, junction emitter to board Thermal resistance, junction emitter to case Thermal resistance, junction detector to board Thermal resistance, junction detector to case Thermal resistance, junction emitter to junction detector Thermal resistance, board to ambient (2) Thermal resistance, case to ambient (2) SYMBOL Pdiss Pdiss Tjmax Tjmax θEB θEC θDB θDC θED θBA θCA at 25 °C at 25 °C VALUE UNIT 100 150 125 125 173 149 111 127 173 197 4041 mW mW °C °C °C/W °C/W °C/W °C/W °C/W °C/W °C/W Notes (1) The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics of Optocouplers Application note. (2) For 2 layer FR4 board (4" x 3" x 0.062) TA θCA Package TC θEC θDC θDE TJD TJE θDB θEB TB θBA 19996 TA ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. 1.6 UNIT INPUT Forward voltage Junction capacitance IF = 50 mA VF 1.25 VR = 0, f = 1 MHz Cj 50 IC = 1 mA VCEO 70 7 V pF OUTPUT Collector emitter voltage Emitter collector voltage Collector emitter cut-off current IE = 100 µA VECO VCE = 20 V, IF = 0 A, E = 0 ICEO V V 10 100 nA COUPLER Collector emitter saturation voltage Cut-off frequency Coupling capacitance IF = 10 mA, IC = 1 mA VCEsat VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz f = 1 MHz Ck 0.3 pF 0.3 V Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. www.vishay.com 812 For technical questions, contact: [email protected] Document Number: 83503 Rev. 2.2, 16-May-08 TCET1100/TCET1100G Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperarure CURRENT TRANSFER RATIO PARAMETER TEST CONDITION VCE = 5 V, IF = 1 mA IC/IF VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 10 mA PART SYMBOL MIN. TYP. TCET1101 TCET1101G MAX. UNIT CTR 13 30 % TCET1102 TCET1102G CTR 22 45 % TCET1103 TCET1103G CTR 34 70 % TCET1104 TCET1104G CTR 56 90 % TCET1100 TCET1100G CTR 50 600 % TCET1105 TCET1105G CTR 50 150 % TCET1106 TCET1106G CTR 100 300 % TCET1107 TCET1107G CTR 80 160 % TCET1108 TCET1108G CTR 130 260 % TCET1109 TCET1109G CTR 200 400 % TCET1101 TCET1101G CTR 40 80 % TCET1102 TCET1102G CTR 63 125 % TCET1103 TCET1103G CTR 100 200 % TCET1104 TCET1104G CTR 160 320 % MAXIMUM SAFETY RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF 130 mA Pdiss 265 mW VIOTM 8 kV Tsi 150 °C INPUT Forward current OUTPUT Power dissipation COUPLER Rated impulse voltage Safety temperature Note According to DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. INSULATION RATED PARAMETERS TEST CONDITION SYMBOL MIN. Partial discharge test voltage routine test PARAMETER 100 %, ttest = 1 s Vpd 1.6 kV Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 8 kV Vpd 1.3 kV VIO = 500 V RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 Ω Insulation resistance Document Number: 83503 Rev. 2.2, 16-May-08 TYP. For technical questions, contact: [email protected] MAX. UNIT www.vishay.com 813 TCET1100/TCET1100G Vishay Semiconductors Optocoupler, Phototransistor Output, Ptot - Total Power Dissipation (mW) High Temperarure VIOTM 300 t1, t2 t3 , t4 ttest tstres Phototransistor Psi (mW) 250 200 = 1 to 10 s =1s = 10 s = 12 s VPd 150 VIOWM VIORM 100 IR-Diode Isi (mA) 50 0 0 0 25 50 75 100 125 150 13930 Tsi - Safety Temperature (°C) 94 9182 Fig. 1 - Derating Diagram t3 ttest t4 tTr = 60 s t1 t2 t stres t Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-5/DIN EN 60747-; IEC60747 SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL Delay time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) td 3.0 µs Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) tr 3.0 µs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) ton 6.0 µs Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) ts 0.3 µs Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) tf 4.7 µs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) toff 5.0 µs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) ton 9.0 µs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) toff 10.0 µs IF TYP. MAX. UNIT +5V IF 0 IC = 2 mA; adjusted through input amplitude RG = 50 tp = 0.01 T tp = 50 µs Channel I Channel II 50 MIN. Oscilloscope RL = 1 M CL = 20 pF IF IF = 10 mA 0 +5V IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I 100 Channel II 50 Ω 1 kΩ Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 95 10804 95 10843 Fig. 3 - Test Circuit, Non-Saturated Operation www.vishay.com 814 Fig. 4 - Test Circuit, Saturated Operation For technical questions, contact: [email protected] Document Number: 83503 Rev. 2.2, 16-May-08 TCET1100/TCET1100G Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperarure IF 0 IC tp t 100 % 90 % 10 % 0 tp td tr t on (= t d + tr) tr td t on ts Pulse duration Delay time Rise time Turn-on time ts tf t off (= ts + tf) t tf t off Storage time Fall time Turn-off time 96 11698 Fig. 5 - Switching Times TYPICAL CHARACTERISTICS 300 Coupled device 250 200 Phototransistor 150 IR-diode 100 50 0 0 96 11700 40 80 120 Tamb - Ambient Temperature (°C) CTRrel - Relative Current Transfer Ratio Ptot - Total Power Dissipation (mW) Tamb = 25 °C, unless otherwise specified 2.0 VCE = 5 V IF = 5 mA 1.5 1.0 0.5 0 - 25 95 11025 Fig. 6 - Total Power Dissipation vs. Ambient Temperature 0 25 50 75 Tamb - Ambient Temperature (°C) Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature 10 000 ICEO - Collector Dark Current, with Open Base (nA) IF - Forward Current (mA) 1000 100 10 1 VCE = 20 V IF = 0 1000 100 10 1 0 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 96 11862 95 11026 25 50 100 75 Tamb - Ambient Temperature (°C) VF - Forward Voltage (V) Fig. 7 - Forward Current vs. Forward Voltage Document Number: 83503 Rev. 2.2, 16-May-08 Fig. 9 - Collector Dark Current vs. Ambient Temperature For technical questions, contact: [email protected] www.vishay.com 815 TCET1100/TCET1100G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperarure CTR - Current Transfer Ratio (%) 100 IC - Collector Current (mA) VCE = 5 V 10 1 0.1 0.01 0.1 1 20 mA IF = 50 mA 10 mA 10 5 mA 2 mA 1 1 mA 0.1 95 10985 VCE - Collector Emitter Voltage (V) VCEsat - Collector Emitter Saturation Voltage (V) 20 % used 0.8 CTR = 50 % used 0.6 0.4 0.2 10 % used 0 IC - Collector Current (mA) Fig. 12 - Collector Emitter Saturation Voltage vs. Collector Current www.vishay.com 816 100 10 10 8 Non-saturated operation VS = 5 V RL = 100 Ω ton 6 toff 4 2 0 0 2 4 8 6 IC - Collector Current (mA) Fig. 14 - Turn-on/off Time vs. Collector Current 50 Saturated operation VS = 5 V RL = 1 kΩ 40 30 toff 20 10 ton 0 0 100 10 1 IF - Forward Current (mA) 95 11030 ton/toff - Turn-on/Turn-off Time (µs) 1.0 1 1 0.1 100 10 Fig. 11 - Collector Current vs. Collector Emitter Voltage 95 11028 10 Fig. 13 - Current Transfer Ratio vs. Forward Current ton/toff- Turn-on /Turn-off Time (µs) IC - Collector Current (mA) 100 1 100 95 11029 Fig. 10 - Collector Current vs. Forward Current 0.1 VCE = 5 V 100 10 IF - Forward Current (mA) 95 11027 1000 95 11031 5 10 15 20 IF - Forward Current (mA) Fig. 15 - Turn-on/off Time vs. Forward Current For technical questions, contact: [email protected] Document Number: 83503 Rev. 2.2, 16-May-08 TCET1100/TCET1100G Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperarure PACKAGE DIMENSIONS in millimeters < 4.75 3.6 ± 0.1 7.62 nom. 4.4 ± 0.2 4.5 ± 0.2 6.3 ± 0.1 5 3.3 0.25 ± 0.0 0.53 ± 0.05 9 ± 0.8 1.32 ± 0.05 2.54 nom. E. g.: Special features: endstackable to 2.54 mm (0.100") spacing 4 3 Weight: ca. 0.25 g Creepage distance: > 6 mm Air path: > 6 mm after mounting on PC board 1 2 2.54 technical drawings according to DIN specifications 2.54 14789 7.62 nom. 4.5 ± 0.2 6.3 ± 0.1 0.53 ± 0.05 4.4 ± 0.2 3.6 ± 0.1 7.25 ± 0.2 < 4.75 0.25 ± 0.05 1.32 ± 0.05 10.16 ± 0.3 2.54 nom. E. g.: Special features: endstackable to 2.54 mm (0.100") spacing 4 3 1 2 2.54 2.54 Weight: ca. 0.25 g Creepage distance: > 8 mm Air path: > 8 mm after mounting on PC board Document Number: 83503 Rev. 2.2, 16-May-08 For technical questions, contact: [email protected] technical drawings according to DIN specifications 14792 www.vishay.com 817 TCET1100/TCET1100G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperarure OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 818 For technical questions, contact: [email protected] Document Number: 83503 Rev. 2.2, 16-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1