KSC5029 KSC5029 High Voltage and High Reliabilty • High Speed Switching • Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 1100 Units V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 4.5 A ICP Collector Current (Pulse) 15 A IB Base Current PC Collector Dissipation (TC=25°C) 2 A 90 W TJ TSTG Junction Temperature 150 °C Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 1mA, IE = 0 Min. 1100 Typ. Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 800 BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V VCEX(sus) Collector-Emitter Sustaining Voltage IC = 2A, IB1 = -IB2 = 0.4A L = 2mH, Clamped 800 V V ICBO Collector Cut-off Current VCB = 800V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.3A VCE = 5V, IC = 1.5A VCE(Sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.4A 2 V VBE(Sat) Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A 1.5 V 10 8 40 Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 90 pF fT Current Gain Bandwidth Product VCE = 10V, IC = 0.3A 15 MHz tON Turn ON Time tSTG Storage Time tF Fall Time VCC = 400V IC = 51B1 = -2.5IB2 = 3A RL = 133Ω 0.5 µs 3 µs 0.3 µs hFE Classificntion Classification N R O hFE1 10 ~ 20 15 ~ 30 20 ~ 40 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5029 Typical Characteristics 5.0 1000 IB = 800mA VCE = 5V IB = 600mA 4.0 IB = 500mA 3.5 IB = 400mA 3.0 IB = 300mA 2.5 IB = 200mA IB = 150mA IB = 100mA 2.0 1.5 IB = 50mA 1.0 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 4.5 100 10 IB = 20mA 0.5 IB = 0 0.0 0 1 2 3 4 5 6 7 8 9 1 0.01 10 0.1 Figure 1. Static Characteristic Figure 2. DC current Gain 10 4.0 IC = 5 IB VCE = 5V 3.5 1 0.1 IC[A], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE V BE(sat) VCE(sat) 0.01 0.01 0.1 1 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 10 0.2 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 10 ICMAX.(Pulse) 0µ s 0.1 DC s tF 10 tON ICMAX s 1m 1 10 m 10 IC[A], COLLECTOR CURRENT tSTG tON, tSTG, tF [µ s], TIME 1 1 0.1 0.01 0.01 0.1 1 IC[A], COLLECTOR CURRENT Figure 5. Switching Time ©2001 Fairchild Semiconductor Corporation 10 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A1, June 2001 KSC5029 Typical Characteristics (Continued) 100 100 90 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT IB 2 = -0.4A L=200uH 10 1 0.1 80 70 60 50 40 30 20 10 0 0.01 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Reverse Bias Safe Operating Area ©2001 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. A1, June 2001 KSC5029 Package Demensions TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3