VISHAY BFR92AF_08

Not for new design, this product will be obsoleted soon
BFR92AF
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Description
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The main purpose of this bipolar transistor is broadband amplification up to 1 GHz. In the space-saving
3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous
packages. In addition to space savings, the SOT-490
provides a higher level of reliability than other 3-pin
packages, such as more resistance to moisture. Due
to the short length of its leads the SOT-490 is also
reducing package inductances resulting in some bet-
ter electrical performance. All of these aspects make
this device an ideal choice for demanding RF applications.
3
16867
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Wide band amplifier up to GHz range.
Mechanical Data
Features
•
•
•
•
•
2
High power gain
Low noise figure
e3
High transition frequency
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Typ: BFR92AF
Case: SOT-490 Plastic case
Weight: approx. 2.5 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Part
Marking
BFR92AF
Package
P2
SOT-490
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Unit
Collector-base voltage
Parameter
Test condition
VCBO
20
V
Collector-emitter voltage
VCEO
15
V
Emitter-base voltage
VEBO
2
V
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Document Number 85098
Rev. 1.4, 05-Sep-08
Tamb ≤ 60 °C
IC
30
mA
Ptot
200
mW
Tj
150
°C
Tstg
-65 to +150
°C
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1
BFR92AF
Vishay Semiconductors
Maximum Thermal Resistance
Parameter
Junction ambient
1)
Test condition
Symbol
Value
Unit
RthJA
450
K/W
1)
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Max
Unit
VCE = 20 V, VBE = 0
ICES
100
μA
Collector-base cut-off current
VCB = 10 V, IE = 0
ICBO
100
nA
Emitter-base cut-off current
VEB = 2 V, IC = 0
IEBO
10
μA
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
V(BR)CEO
15
hFE
65
Collector-emitter cut-off current
Test condition
DC forward current transfer ratio VCE = 10 V, IC = 14 mA
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2
Symbol
Min
Typ.
V
100
150
Document Number 85098
Rev. 1.4, 05-Sep-08
BFR92AF
Vishay Semiconductors
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Transition frequency
VCE = 10 V, IC = 14 mA,
f = 500 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
Emitter-base capacitance
Symbol
Min
Typ.
Max
Unit
fT
6
GHz
Ccb
0.3
pF
VCE = 10 V, f = 1 MHz
Cce
0.15
pF
VEB = 0.5 V, f = 1 MHz
Ceb
0.65
pF
Noise figure
VCE = 10 V, IC = 2 mA,
ZS = 50 Ω, f = 800 MHz
F
1.8
dB
Power gain
VCE = 10 V, ZS = 50 Ω,
ZL = ZLopt, IC = 14 mA,
f = 800 MHz
Gpe
16.5
dB
Transducer gain
VCE = 10 V, IC = 14 mA,
f = 800 MHz, ZO = 50 Ω
|S21e|2
14
dB
Linear output voltage - two tone
intermodulation test
VCE = 10 V, IC = 14 mA,
dIM = 60 dB, f1 = 806 MHz,
f2 = 810 MHz, ZS = ZL = 50 Ω
V1 = V 2
120
mV
Third order intercept point
VCE = 10 V, IC = 14 mA,
f = 800 MHz
IP3
24
dBm
Package Dimensions in mm
0.6 (0.023)
0.8 (0.031)
0.10 (0.004)
0.20 (0.008)
1.5 (0.059)
1.7 (0.066)
0.1 A
3 x 0.20 (0.008)
3 x 0.30 (0.012)
1.5 (0.059)
1.7 (0.066)
0.4 (0.016)
0.1 B
0.65(0.026)
0.75 (0.029)
0.95 (0.037)
ISO Method E
16866
0.5 (0.016)
1.0 (0.039)
Document Number 85098
Rev. 1.4, 05-Sep-08
1.15(0.045)
0.5 (0.016)
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BFR92AF
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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4
Document Number 85098
Rev. 1.4, 05-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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