KSC1008 KSC1008 Low Frequency Amplifier Medium Speed Switching • • • • • Complement to KSA708 High Collector-Base Voltage : VCBO=80V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings 80 Units V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current 700 mA PC Collector Power Dissipation 800 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=100µA, IE=0 Min. 80 BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 60 BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 8 ICBO Collector Cut-off Current VCB=60V, IE=0 IEBO Emitter Cut-off Current VEB=5V, IC=0 hFE DC Current Gain VCE=2V, IC=50mA Typ. Max. Units V V V 40 0.1 µA 0.1 µA 400 VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 0.2 0.4 V VBE (sat) Base-Emitter Saturation Voltage IC=500mA, IB=50mA 0.86 1.1 V fT Current Gain Bandwidth Product VCE=10V, IC=50mA Cob Output Capacitance VCB=10V, IE=0, f=1MHz 30 50 MHz 8 pF hFE Classification Classification R O Y G hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 ©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001 KSC1008 Typical Characteristics 240 200 IB = 1.8mA VCE = 2V 220 IB = 1.6mA 200 160 IB = 1.4mA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT 180 140 IB = 1.2mA 120 IB = 1.0mA 100 IB = 0.8mA 80 IB = 0.6mA 60 IB = 0.4mA 40 180 160 140 120 100 80 60 40 20 IB = 0.2mA 20 0 0 0 5 10 15 20 25 30 35 40 45 1 50 10 VCE[V], COLLECTOR-EMITTER VOLTAGE 1000 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 1000 IC=10IB VCE=2V IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 1 V BE(sat) 0.1 V CE(sat) 0.01 1 10 100 1000 IC[mA], COLLECTOR CURRENT 100 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 f=1MHz Cob[pF],CAPACTIANCE IE=0 10 1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001 KSC1008 Package Demensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H4