FJD3076 FJD3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage D-PACK 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 40 Units V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current 2 A PC Collector Dissipation (Ta=25°C) 1 W 10 W TJ Collector Dissipation (TC=25°C) Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage Test Condition IC = 1mA, IB = 0 Min. 32 BVCBO Collector-Base Breakdown Voltage IC = 50µA 40 BVEBO Emitter-Base Breakdown Voltage IE = 50µA 5 ICBO Collector Cut-off Current VCB = 20V, IE = 0 IEBO Emitter Cut-off Current VEB = 4V, IC = 0 hFE DC Current Gain VCE = 3V, IC= 0.5A Typ. Max. Units V V V 130 1 µA 1 µA 390 VCE(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.5 fT Current Gain Bandwidth Product VCE = 5V, IE = -0.5A, f = 100MHz 100 MHz Cob Output Capacitance VCB = 10V, IE = 0A, f = 1MHz 50 pF ©2001 Fairchild Semiconductor Corporation 0.8 V Rev. C1, December 2001 FJD3076 Typical Characteristics 1000 2.0 IB = 18mA hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = 20mA 1.6 IB = 16mA IB = 14mA IB = 12mA 1.2 IB = 10mA IB = 8mA 0.8 IB = 6mA IB = 4mA 0.4 0.0 0 10 VCE = 3V 100 VCE = 1V IB = 2mA 20 10 1E-3 30 0.01 VCE[V], COLLECTOR-EMITTER VOLTAGE 1 10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC Current Gain 10 1000 IE=0 f=1MHz IC = 10 IB Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 0.1 VBE(sat) 1 0.1 VCE(sat) 0.01 1E-3 100 10 0.01 0.1 1 10 1 IC[A], COLLECTOR CURRENT 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 10 IC(Pulse) MAX. IC(DC) MAX. 10 1 10m s DC Lim ited 0.1 VCEO MAX. 100 Dis sip atio n PW =1 00 us 1m s d ite m Li IC[A], COLLECTOR CURRENT 1000 b S/ IC(mA), COLLECTOR CURRENT VCE = 3V *SINGLE NONREPETITIVE o PULSE TC=25[ C] 1 0.0 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VBE(mV), BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage ©2001 Fairchild Semiconductor Corporation 2.0 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. C1, December 2001 FJD3076 Package Demensions D-PAK 0.50 ±0.10 MIN0.55 0.91 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (2XR0.25) (1.00) (3.05) 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.70) 2.30 ±0.20 (0.90) 6.10 ±0.20 2.30 ±0.10 (0.10) 2.30TYP [2.30±0.20] (0.50) 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 9.50 ±0.30 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 0.76 ±0.10 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H4