KSD261 KSD261 Low Frequency Power Amplifier • Complement to KSA643 • Collector Power Dissipation : PC=500mW • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings 40 Units V VCEO VEBO Collector-Emitter Voltage 20 V Emitter-Base Voltage 5 IC V Collector Current 500 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=100µA, IE=0 Min. 40 BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 20 BVEBO Emitter-Base Breakdown Voltage IE=100µA, IC=0 5 ICBO Collector Cut-off Current VCB=25V, IE=0 IEBO Emitter Cut-off Current VEB=3V, IC=0 hFE DC Current Gain VCE=1V, IC=0.1A VCE (sat) Collector-Emitter Saturation Voltage IC=0.5A, IB=50mA Typ. Max. Units V V V 120 0.1 µA 0.1 µA 400 0.18 0.4 V hFE Classification Classification Y G hFE 120 ~ 240 200 ~ 400 ©2004 Fairchild Semiconductor Corporation Rev. B2, April 2004 KSD261 Typical Characteristics 500 1000 IB = 1.8mA 400 IB = 1.6mA 350 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT VCE = 1V IB = 2.0mA 450 IB = 1.4mA 300 IB = 1.2mA 250 IB = 1.0mA 200 IB = 0.8mA 150 IB = 0.6mA 100 IB = 0.4mA 50 100 IB = 0.2mA 10 0 0 1 2 3 4 5 6 7 8 9 1 10 10 1000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain 10 100 VCE = 1V IC = 10 IB IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 VBE(sat) 1 0.1 VCE(sat) 0.01 1 10 100 1000 10 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 Cob [pF], CAPACITANCE IE = 0 f = 1MHz 10 1 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2004 Fairchild Semiconductor Corporation Rev. B2, April 2004 KSD261 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. B2, April 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST® FASTr™ Bottomless™ FPS™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ EnSigna™ I2C™ i-Lo™ FACT™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I10