FAIRCHILD KSD261

KSD261
KSD261
Low Frequency Power Amplifier
• Complement to KSA643
• Collector Power Dissipation : PC=500mW
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
TO-92
1
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Ratings
40
Units
V
VCEO
VEBO
Collector-Emitter Voltage
20
V
Emitter-Base Voltage
5
IC
V
Collector Current
500
mA
PC
Collector Power Dissipation
500
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=100µA, IE=0
Min.
40
BVCEO
Collector-Emitter Breakdown Voltage
IC=10mA, IB=0
20
BVEBO
Emitter-Base Breakdown Voltage
IE=100µA, IC=0
5
ICBO
Collector Cut-off Current
VCB=25V, IE=0
IEBO
Emitter Cut-off Current
VEB=3V, IC=0
hFE
DC Current Gain
VCE=1V, IC=0.1A
VCE (sat)
Collector-Emitter Saturation Voltage
IC=0.5A, IB=50mA
Typ.
Max.
Units
V
V
V
120
0.1
µA
0.1
µA
400
0.18
0.4
V
hFE Classification
Classification
Y
G
hFE
120 ~ 240
200 ~ 400
©2004 Fairchild Semiconductor Corporation
Rev. B2, April 2004
KSD261
Typical Characteristics
500
1000
IB = 1.8mA
400
IB = 1.6mA
350
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
VCE = 1V
IB = 2.0mA
450
IB = 1.4mA
300
IB = 1.2mA
250
IB = 1.0mA
200
IB = 0.8mA
150
IB = 0.6mA
100
IB = 0.4mA
50
100
IB = 0.2mA
10
0
0
1
2
3
4
5
6
7
8
9
1
10
10
1000
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
100
VCE = 1V
IC = 10 IB
IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
100
VBE(sat)
1
0.1
VCE(sat)
0.01
1
10
100
1000
10
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
Cob [pF], CAPACITANCE
IE = 0
f = 1MHz
10
1
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2004 Fairchild Semiconductor Corporation
Rev. B2, April 2004
KSD261
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. B2, April 2004
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2004 Fairchild Semiconductor Corporation
Rev. I10