TSDF1220F Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to more than 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. . In addition to space savings, the SOT-490 provides a higher level of reliability than other 3-pin packages, such as more resistance to moisture. Due to the short length of its leads the SOT-490 is also reducing package inductances resulting in some better electrical performance. All of these aspects make this device an ideal choice for demanding RF applications 2 3 16867 Electrostatic sensitive device. Observe precautions for handling. Applications For low noise applications such as preamplifiers, mixers and oscillators in analog and digital TV-systems (e.g., satellite tuners) up to microwave frequencies. Features • • • • • Low power applications Very low noise figure e3 High transition frequency fT = 12 GHz Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Mechanical Data Typ: TSDF1220F Case: SOT-490 Plastic case Weight: approx. 2.5 mg Pinning: 1 = Collector, 2 = Base, 3 = Emitter Parts Table Part Marking TSDF1220F Package F2 SOT-490 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Unit Collector-base voltage Parameter Test condition VCBO 9 V Collector-emitter voltage VCEO 6 V Emitter-base voltage VEBO 2 V Collector current Total power dissipation Junction temperature Storage temperature range Document Number 85106 Rev. 1.3, 02-May-05 Tamb ≤ 60 °C IC 40 mA Ptot 200 mW Tj 150 °C Tstg - 65 to + 150 °C www.vishay.com 1 TSDF1220F Vishay Semiconductors Maximum Thermal Resistance Parameter Junction ambient 1) Test condition Symbol Value Unit RthJA 450 K/W 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Max Unit VCE = 12 V, VBE = 0 ICES 100 μA Collector-base cut-off current VCB = 10 V, IE = 0 ICBO 100 nA Emitter-base cut-off current VEB = 1 V, IC = 0 IEBO 2 μA Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO Collector-emitter saturation voltage IC = 30 mA, IB = 3 mA Collector-emitter cut-off current Test condition DC forward current transfer ratio VCE = 5 V, IC = 20 mA www.vishay.com 2 Symbol Min 6 VCEsat hFE Typ. 50 V 0.1 0.5 100 150 V Document Number 85106 Rev. 1.3, 02-May-05 TSDF1220F Vishay Semiconductors Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Transition frequency Test condition Symbol VCE = 5 V, IC = 20 mA, f = 1 GHz fT Min Typ. Max Unit 12 GHz Collector-base capacitance VCB = 1 V, f = 1 MHz Ccb 0.3 pF Collector-emitter capacitance VCE = 1 V, f = 1 MHz Cce 0.35 pF Ceb 0.5 pF F 1.2 dB Gpe 13.5 dB Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure VCE = 5 V, IC = 3 mA, ZS = ZSopt, ZL = 50 Ω, f = 2 GHz Power gain VCE = 5 V, IC = 20 mA, ZS = ZSopt, ZL = 50 Ω, f = 2 GHz Transducer gain VCE = 5 V, IC = 20 mA, f = 2 GHz, ZO = 50 Ω |S21se|2 12 dB Third order intercept point at output VCE = 5 V, IC = 20 mA, f = 2 GHz IP3 22 dBm Package Dimensions in mm 0.6 (0.023) 0.8 (0.031) 0.10 (0.004) 0.20 (0.008) 1.5 (0.059) 1.7 (0.066) 0.1 A 3 x 0.20 (0.008) 3 x 0.30 (0.012) 1.5 (0.059) 1.7 (0.066) 0.4 (0.016) 0.1 B 0.65(0.026) 0.75 (0.029) 0.95 (0.037) ISO Method E 16866 0.5 (0.016) 1.0 (0.039) Document Number 85106 Rev. 1.3, 02-May-05 1.15(0.045) 0.5 (0.016) www.vishay.com 3 TSDF1220F Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 85106 Rev. 1.3, 02-May-05