INTEGRATED CIRCUITS DATA SHEET TDA2616/TDA2616Q 2 x 12 W hi-fi audio power amplifiers with mute Product specification File under Integrated Circuits, IC01 July 1994 Philips Semiconductors Product specification 2 x 12 W hi-fi audio power amplifiers with mute TDA2616/TDA2616Q FEATURES GENERAL DESCRIPTION • Requires very few external components The TDA2616 and TDA2616Q are dual power amplifiers. The TDA2616 is supplied in a 9-lead single-in-line (SIL9) plastic power package (SOT131), while the TDA2616Q is supplied in a 9-lead SIL-bent-to-DIL plastic power package (SOT157). They have been especially designed for mains fed applications, such as stereo radio and stereo TV. • No switch-on/switch-off clicks • Input mute during switch-on and switch-off • Low offset voltage between output and ground • Excellent gain balance of both amplifiers • Hi-fi in accordance with IEC 268 and DIN 45500 • Short-circuit proof and thermal protected • Mute possibility. QUICK REFERENCE DATA Stereo application SYMBOL PARAMETER ±VP supply voltage range PO output power Gv internal voltage gain CONDITIONS VP = ±16 V; THD = 0.5% MIN. TYP. MAX. UNIT 7.5 − 21 V − 12 − W − 30 − dB Gv channel unbalance − 0.2 − dB α channel separation − 70 − dB SVRR supply voltage ripple rejection − 60 − dB Vno noise output voltage − 70 − µV ORDERING INFORMATION PACKAGE EXTENDED TYPE NUMBER PINS PIN POSITION MATERIAL TDA2616 9 SIL plastic SOT131(1) TDA2616Q 9 SIL-bent-to-DIL plastic SOT157(2) Notes 1. SOT131-2; 1996 August 27. 2. SOT157-2; 1996 August 27. July 1994 2 CODE Philips Semiconductors Product specification 2 x 12 W hi-fi audio power amplifiers with mute TDA2616/TDA2616Q + VP handbook, full pagewidth 7 VA TDA2616 V ref1 20 kΩ 680 Ω CM VB INV1 1 20 kΩ MUTE 4 OUT1 4 kΩ 2 – VP 5 kΩ + VP V ref3 10 kΩ + VP + V ref2 1/2 V P / GND 3 THERMAL PROTECTION Vref1 voltage comparator VA V B 10 kΩ – V ref2 – VP – VP 20 kΩ INV2 INV1, 2 6 9 8 CM 680 Ω VB 20 kΩ V ref1 VA 5 MCD375 - 1 – VP Fig.1 Block diagram. July 1994 3 OUT2 Philips Semiconductors Product specification 2 x 12 W hi-fi audio power amplifiers with mute PINNING TDA2616/TDA2616Q FUNCTIONAL DESCRIPTION SYMBOL PIN The TDA2616 is a hi-fi stereo amplifier designed for mains fed applications, such as stereo radio and TV. The circuit is optimally designed for symmetrical power supplies, but is also well-suited to asymmetrical power supply systems. DESCRIPTION −INV1 1 non-inverting input 1 MUTE 2 mute input 1/2VP/GND 3 1/2 supply voltage or ground OUT1 4 output 1 −VP 5 supply voltage (negative) OUT2 6 output 2 +VP 7 supply voltage (positive) INV1, 2 8 inverting inputs 1 and 2 −INV2 9 non-inverting input 2 An output power of 2 × 12 W (THD = 0.5%) can be delivered into an 8 Ω load with a symmetrical power supply of ±16 V. The gain is internally fixed at 30 dB, thus offering a low gain spread and a very good gain balance between the two amplifiers (0.2 dB). A special feature is the input mute circuit. This circuit disconnects the non-inverting inputs when the supply voltage drops below ±6 V, while the amplifier still retains its DC operating adjustment. The circuit features suppression of unwanted signals at the inputs, during switch-on and switch-off. handbook, halfpage INV1 1 MUTE 2 1/2 VP / GND 3 OUT1 4 VP 5 OUT2 6 + VP 7 INV1, 2 8 INV2 9 The mute circuit can also be activated via pin 2. When a current of 300 µA is present at pin 2, the circuit is in the mute condition. The device is provided with two thermal protection circuits. One circuit measures the average temperature of the crystal and the other measures the momentary temperature of the power transistors. These control circuits attack at temperatures in excess of +150 °C, so a crystal operating temperature of max. +150 °C can be used without extra distortion. TDA2616 With the derating value of 2.5 K/W, the heatsink can be calculated as follows: MCD372 - 1 at RL = 8 Ω and VP = ±16 V, the measured maximum dissipation is 14.6 W. Fig.2 Pin configuration. With a maximum ambient temperature of +65 °C, the thermal resistance of the heatsink is: 150 – 65 R th = ---------------------- – 2.5 = 3.3 K/W. 14.6 The internal metal block has the same potential as pin 5. July 1994 4 Philips Semiconductors Product specification 2 x 12 W hi-fi audio power amplifiers with mute TDA2616/TDA2616Q LIMITING VALUES In accordance with the Absolute maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ±VP supply voltage − 21 V IOSM non-repetitive peak output current − 4 A Ptot total power dissipation − 25 W Tstg storage temperature range −55 +150 °C TXTAL crystal temperature − +150 °C Tamb ambient operating temperature range −25 150 °C tsc short circuit time − 1 h see Fig.3 short-circuit to ground; note 1 Note to the limiting values 1. For asymmetrical power supplies (with the load short-circuited), the maximum unloaded supply voltage is limited to VP = 28 V and with an internal supply resistance of RS ≥ 4 Ω, the maximum unloaded supply voltage is limited to 32 V (with the load short-circuited). For symmetrical power supplies the circuit is short-circuit-proof up to VP = ±21 V. MCD376 - 2 32 handbook, halfpage Ptot (W) 24 infinite heatsink 16 R th-hs= 3.3 K/W 8 0 – 25 0 50 100 150 Tamb ( o C) Fig.3 Power derating curve. THERMAL RESISTANCE SYMBOL Rth j-a July 1994 PARAMETER from junction to ambient in free air THERMAL RESISTANCE 2.5 K/W 5 Philips Semiconductors Product specification 2 x 12 W hi-fi audio power amplifiers with mute TDA2616/TDA2616Q CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply ±VP supply voltage range − 16 21 V IORM repetitive peak output current − 2.2 − A 7.5 16 21 V RL = ∞ 18 40 70 mA THD = 0.5% 10 12 − W THD = 10% 12 15 − W Operating position; note 1 ±VP supply voltage range IP total quiescent current PO output power THD total harmonic distortion PO = 6 W − 0.15 0.2 % B power bandwidth THD = 0.5%; note 2 − 20 to 20 000 − Hz Gv voltage gain 29 30 31 dB Gv gain unbalance − 0.2 1 dB − 70 140 µV 14 20 26 kΩ 40 60 − dB Vno noise output voltage Zi input impedance SVRR supply voltage ripple rejection note 4 α channel separation RS = 0 46 70 − dB Ibias input bias current − 0.3 − µA ∆VGND DC output offset voltage − 30 200 mV ∆V4-6 DC output offset voltage between two channels − 4 150 mV − 0.3 1.0 mV note 3 MUTE POSITION (AT IMUTE ≥ 300 µA) VO output voltage VI = 600 mV Z2-7 mute input impedance note 7 6.7 9 11.3 kΩ IP total quiescent current RL = ∞ 18 40 70 mA Vno noise output voltage note 3 − 70 140 µV SVRR supply voltage ripple rejection note 4 40 55 − dB ∆VGND DC output offset voltage − 40 200 mV ∆Voff offset voltage with respect to operating position − 4 150 mV I2 current if pin 2 is connected to pin 5 − − 8.2 mA 2 − 5.8 V Mute position; note 5 ±VP supply voltage range IP total quiescent current RL = ∞ 9 30 40 mA VO output voltage VI = 600 mV − 0.3 1.0 mV Vno noise output voltage note 3 − 70 140 µV SVRR supply voltage ripple rejection note 4 40 55 − dB July 1994 6 Philips Semiconductors Product specification 2 x 12 W hi-fi audio power amplifiers with mute SYMBOL ∆VGND PARAMETER CONDITIONS TDA2616/TDA2616Q MIN. TYP. MAX. UNIT − 40 200 mV 18 40 70 mA THD = 0.5% 5 6 − W THD = 10% 6.5 8 − W THD = 0.5%; RL = 4 Ω − 10 − W DC output offset voltage Operating position; note 6 IP total quiescent current PO output power THD = 10%; RL = 4 Ω − 14 − W THD total harmonic distortion PO = 4 W − 0.13 0.2 % B power bandwidth THD = 0.5%; note 2 − 40 to 20 000 − Hz Gv voltage gain 29 30 31 dB − 0.2 1 dB − 70 140 µV 14 20 26 kΩ Gv gain unbalance Vno noise output voltage Zi input impedance SVRR supply voltage ripple rejection 35 44 − dB α channel separation − 45 − dB note 3 MUTE POSITION (IMUTE ≥ 300 µA) VO output voltage VI = 600 mV − 0.3 1.0 mV Z2-7 mute input impedance note 7 6.7 9 11.3 kΩ IP total quiescent current 18 40 70 mA Vno noise output voltage note 3 − 70 140 µV SVRR supply voltage ripple rejection note 4 35 44 − dB ∆Voff offset voltage with respect to operating position − 4 150 mV I2 current if pin 2 is connected to pin 5 − − 8.2 mA Notes to the characteristics 1. VP = ±16 V; RL = 8 Ω; Tamb = 25 °C; f = 1 kHz; symmetrical power supply IMUTE < 30 µA. See Fig.4 2. The power bandwidth is measured at an output power of PO max − 3 dB 3. The noise output voltage (RMS value) is measured at RS = 2 kΩ, unweighted (20 Hz to 20 kHz) 4. The ripple rejection is measured at RS = 0 and f = 100 Hz to 20 kHz. The ripple voltage (200 mV) is applied in phase to the positive and the negative supply rails. With asymmetrical power supplies, the ripple rejection is measured at f = 1 kHz 5. ±VP = 4 V; RL = 8 Ω; Tamb = 25 °C; f = 1 kHz; symmetrical power supply. See Fig.4 6. VP = 24 V; RL = 8 Ω; Tamb = 25 °C; f = 1 kHz; asymmetrical power supply IMUTE < 30 µA. See Fig.5 7. The internal network at pin 2 is a resistor devider of typical 4 kΩ and 5 kΩ to the positive supply rail. At the connection of the 4 kΩ and 5 kΩ resistor a zener diode of typical 6.6 V is also connected to the positive supply rail. The spread of the zener voltage is 6.1 to 7.1 V. July 1994 7 Philips Semiconductors Product specification 2 x 12 W hi-fi audio power amplifiers with mute TDA2616/TDA2616Q + VP mute input handbook, full pagewidth 2 680 Ω 220 nF VI 2200 µF 7 20 kΩ 4 1 22 nF 20 kΩ 3 8.2 Ω TDA2616 R L= 8 Ω 20 kΩ 220 nF VI 100 nF 9 6 22 nF 8 680 Ω 20 kΩ 8.2 Ω R L= 8 Ω 5 – VP 2200 µF MCD374 - 3 Fig.4 Test and application circuit with symmetrical power supply. July 1994 8 Philips Semiconductors Product specification 2 x 12 W hi-fi audio power amplifiers with mute RS VP mute input handbook, full pagewidth TDA2616/TDA2616Q 100 nF 2 7 680 Ω 220 nF VI 2200 µF 20 kΩ 4 1 22 nF 20 kΩ 3 8.2 Ω internal 1/2 VP 100 µF TDA2616 680 µF R L= 8 Ω 20 kΩ 220 nF VI 9 6 22 nF 8 680 Ω 20 kΩ 8.2 Ω 680 µF R L= 8 Ω 5 MCD373 - 2 Fig.5 Test and application circuit with asymmetrical power supply. July 1994 9 VS Philips Semiconductors Product specification 2 x 12 W hi-fi audio power amplifiers with mute TDA2616/TDA2616Q PACKAGE OUTLINES SIL9P: plastic single in-line power package; 9 leads SOT131-2 non-concave Dh x D Eh view B: mounting base side d A2 seating plane B E j A1 b L c 1 9 e Z Q w M bp 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A1 max. A2 b max. bp c D (1) d Dh E (1) e Eh j L Q w x Z (1) mm 2.0 4.6 4.2 1.1 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 12.2 11.8 2.54 6 3.4 3.1 17.2 16.5 2.1 1.8 0.25 0.03 2.00 1.45 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 92-11-17 95-03-11 SOT131-2 July 1994 EUROPEAN PROJECTION 10 Philips Semiconductors Product specification 2 x 12 W hi-fi audio power amplifiers with mute TDA2616/TDA2616Q DBS9P: plastic DIL-bent-SIL power package; 9 leads (lead length 12 mm) SOT157-2 non-concave Dh x D Eh view B: mounting base side d A2 B j E A L3 L Q c 1 9 e1 Z bp e e2 m w M 0 5 v M 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A2 bp c D (1) d Dh E (1) e mm 17.0 15.5 4.6 4.2 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 12.2 11.8 5.08 e1 e2 2.54 5.08 Eh j L L3 m Q v w x Z (1) 6 3.4 3.1 12.4 11.0 2.4 1.6 4.3 2.1 1.8 0.8 0.25 0.03 2.00 1.45 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 92-10-12 95-03-11 SOT157-2 July 1994 EUROPEAN PROJECTION 11 Philips Semiconductors Product specification 2 x 12 W hi-fi audio power amplifiers with mute TDA2616/TDA2616Q The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. Repairing soldered joints Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Soldering by dipping or by wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1994 12