FAIRCHILD BC214

BC214
BC214
PNP General Purpose Amplifier
• This device is deisgned for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
• Sourced from process 68.
TO-92
1
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
VCEO
Collector-Emitter Voltage
Parameter
Value
-30
Units
V
VCBO
VEBO
Collector-Base Voltage
-45
V
Emitter-Base Voltage
-5.0
IC
Collector Current (DC)-
V
-500
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
- 55 ~ 150
°C
- Continuous
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Off Characteristics
Parameter
Test Condition
Min.
Max.
Units
V(BR)CEO
Collector-Emitter Voltage
IC = -2mA, IB = 0
-30
V(BR)CBO
Collector-Base Voltage
IC = -10µA, IE = 0
-45
V
V
V(BR)EBO
Emitter-Base Voltage
IE = -10µA, IC = 0
-5.0
V
ICBO
Collector Cut-off Current
VCB = -30V, IE = 0
-15
nA
IEBO
Emitter Cut-off Current
VEB = -4V, IC = 0
-15
nA
On Characteristics *
hFE
VCE(sat)
DC Current Gain
VCE = -5V, IC = -10µA
VCE = -5V, IC = -2mA
VCE = -5V, IC = -100mA
100
140
120
400
-0.25
-0.6
Collector-Emitter Saturation Voltage
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5mA
VBE(sat)
Base-Emitter Saturation Voltage
IC = -100mA, IB = -5mA
VBE(on)
Base-Emitter On Voltage
VCE = -5V, IC = -2mA
-0.6
200
V
-1.1
V
-0.72
V
Small Signal Characteristics
fT
Current gain Bandwidth Product
VCE = -5V, IC = -10mA
f = 100MHz
NF
Noise Figure
VCE = -5V, IC = -200µA
RG = 2kΩ, f = 15.7KHz
hfe
Small Signal Current Gain
IC = -2mA, VCE = -5V
f = 1KHz
COB
Output Capacitance
VCB = -10V, f = 1MHz
MHz
2.0
140
dB
600
10
pF
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
©2004 Fairchild Semiconductor Corporation
Rev. A, July 2004
Symbol
PD
Parameter
Total Device Dissipation
Derate above 25°C
Max.
625
5.0
Units
mW
mW/°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, July 2004
BC214
Thermal Characteristics TA=25°C unless otherwise noted
BC214
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. A, July 2004
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CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2004 Fairchild Semiconductor Corporation
Rev. I11