Data Sheet PIN diode RN779D Dimensions (Unit : mm) Applications Attenuator Land size figure (Unit : mm) 1.9 2.9±0.2 各リー ドと も ＋0.1 同lead 寸法has same dimension 0.4 －0.05 Each ＋0.1 0.95 1.0MIN. ＋0.2 1.6－0.1 2.8±0.2 (3) 0～0.1 (1) 0.95 Construction Silicon diffused junction 0.8± 0.1 0.95 0.8MIN. 0.3～0.6 (2) 2.4 0.15－0.06 Features 1) Small mold type. (SMD3) 2) High reliability. SMD3 0.2 1.1± 0.2 1.1 0.1 0.01 1.9± 0.2 Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping specifications(Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 Conditions Min. Typ. Max. Unit - - 1.0 V IF=10mA IR - - 100 nA VR=50V Capacitance between terminals Ct - - 0.9 pF VR=35V , f=1MHz High frequency resistance Rf - - 7.0 Ω IF=10mA, f=100MHz 1/2 1.35±0.1 Unit V mA °C °C 50 50 150 55 to 150 Reverse current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3.2±0.1 5.5±0.2 3.5±0.05 Limits 0～0.5 3.2±0.1 Absolute maximum ratings(Ta=25°C) Parameter Symbol Reverse voltage (DC) VR IF Reverse current (DC) Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage φ1.05MIN 4.0±0.1 3.2±0.1 8.0±0.2 1.75±0.1 4.0±0.1 2011.03 - Rev.A Data Sheet RN779D 100 10 100000 Ta=125℃ Ta=25℃ Ta=125℃ Ta=150℃ Ta=-25℃ 1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 f=1MHz 10000 REVERSE CURRENT:IR(nA) Ta=75℃ 1000 Ta=25℃ 100 10 Ta=-25℃ 1 0.1 0.1 100 200 300 400 500 600 700 800 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10000 10 20 30 40 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 50 CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD OPERATING RESISTANCE:rf(Ω) 100MHz 100 1MHz 10MHz 10 1 1 10 0.1 70 60 50 40 AVE：26.8nA 30 20 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 80 35 780 AVE:782.8mV 770 760 1 10 VF DISPERSION MAP 5 0.6 Ta=25℃ VR=50V n=30pcs 90 30 Ta=25℃ IF=10mA n=30pcs 790 FREQUENCY(MHz) Ct-f CHARACTERISTICS FORWARD CURRENT:IF(mA) rf-IF CHARACTERISTICS 100 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 750 0.1 0.1 5 800 Ta=25℃ VR=0V 1 0.01 0 10 1000 1 0.1 0 900 1000 1100 FORWARD VOLTAGE:VF(mV) 0 Ta=25℃ f=1MHz VR=35V n=30pcs 0.5 0.4 FORWARD OPERATING RESISTANCE:rf(Ω) FORWARD CURRENT:IF(mA) Ta=75℃ 4 AVE:4.12Ω Ta=25℃ f=100MHz IF=10mA n=30pcs 3 2 1 AVE:0.44pF 10 0 0.3 0 IR DISPERSION MAP Ct DISPERSION MAP FORWARD CURRENT:IF(mA) rf DISPERSION MAP ELECTROSTATIC DISCHARGE TEST ESD(KV) 4 3 AVE:3.44kV AVE:2.67kV 2 1 AVE:1.48kV 0 C=200pF R=0Ω C=150pF R=330Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.03 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A