VISHAY ST280SPBF_12

ST280SPbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 280 A
FEATURES
• Center amplifying gate
• International standard case TO-209AB (TO-93)
• Hermetic metal case with glass-metal seal
insulator
RoHS
COMPLIANT
• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
• Lead (Pb)-free
TO-209AB (TO-93)
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
PRODUCT SUMMARY
• DC motor controls
IT(AV)
280 A
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
TC
VALUES
UNITS
280
A
85
°C
440
IT(RMS)
ITSM
I2 t
50 Hz
7850
60 Hz
8220
50 Hz
308
60 Hz
281
VDRM/VRRM
tq
Typical
TJ
A
kA2s
400/600
V
100
µs
- 40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
ST280S
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
04
400
500
06
600
700
Document Number: 94402
Revision: 11-Aug-08
VRSM, MAXIMUM NON-REPETITIVE IDRM/IRRM MAXIMUM
PEAK VOLTAGE
AT TJ = TJ MAXIMUM
V
mA
For technical questions, contact: [email protected]
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ST280SPbF Series
Vishay High Power Products Phase Control Thyristors
(Stud Version), 280 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one-cycle
non-repetitive surge current
ITSM
VALUES
UNITS
180° conduction, half sine wave
TEST CONDITIONS
280
A
85
°C
DC at 75 °C case temperature
440
t = 10 ms
7850
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2 t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2√t for fusing
I2√t
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
8220
Sinusoidal half wave,
initial TJ = TJ maximum
6900
310
220
218
100 % VRRM
reapplied
3100
Low level value of threshold voltage
VT(TO)1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
0.84
VT(TO)2
(I > π x IT(AV)), TJ = TJ maximum
0.88
Low level value of on-state slope resistance
rt1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
0.50
High level value of on-state slope resistance
rt2
(I > π x IT(AV)), TJ = TJ maximum
0.47
Ipk = 880 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.28
VTM
Maximum holding current
IH
Maximum (typical) latching current
IL
kA2s
200
t = 0.1 to 10 ms, no voltage reapplied
High level value of threshold voltage
Maximum on-state voltage
A
6600
600
TJ = 25 °C, anode supply 12 V resistive load
1000 (300)
kA2√s
V
mΩ
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
Gate drive 20 V, 20 Ω, tr ≤ 1 µs
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
VALUES
UNITS
1000
A/µs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/µs
Vd = 0.67 % VDRM, TJ = 25 °C
1.0
Typical turn-off time
tq
ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs,
VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs
100
SYMBOL
TEST CONDITIONS
VALUES
UNITS
µs
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/µs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
30
mA
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For technical questions, contact: [email protected]
Document Number: 94402
Revision: 11-Aug-08
ST280SPbF Series
Phase Control Thyristors
(Stud Version), 280 A
Vishay High Power Products
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
VALUES
TEST CONDITIONS
TYP.
TJ = TJ maximum, tp ≤ 5 ms
10.0
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
TJ = TJ maximum, tp ≤ 5 ms
3.0
IGT
TJ = 25 °C
TJ = 125 °C
TJ = - 40 °C
DC gate voltage required to trigger
VGT
TJ = 25 °C
TJ = 125 °C
DC gate current not to trigger
IGD
DC gate voltage not to trigger
VGD
TJ = TJ maximum
A
V
5.0
Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 12 V
anode to cathode applied
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated VDRM anode to cathode
applied
UNITS
W
20
TJ = TJ maximum, tp ≤ 5 ms
TJ = - 40 °C
DC gate current required to trigger
MAX.
180
-
90
150
40
-
2.9
-
1.8
3.0
1.2
-
mA
V
10
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction temperature range
TEST CONDITIONS
TJ
- 40 to 125
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance, junction to case
RthJC
DC operation
0.105
Maximum thermal resistance, case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.04
Non-lubricated threads
31
(275)
Lubricated threads
24.5
(210)
Mounting torque, ± 10 %
Approximate weight
280
Case style
See dimensions - link at the end of datasheet
°C
K/W
N·m
(lbf · in)
g
TO-209AB (TO-93)
ΔRthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.016
0.012
120°
0.019
0.020
90°
0.025
0.027
60°
0.036
0.037
30°
0.060
0.060
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94402
Revision: 11-Aug-08
For technical questions, contact: [email protected]
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3
ST280SPbF Series
Vishay High Power Products Phase Control Thyristors
Maximum Allowable Case Temperature (°C)
130
ST280SSeries
RthJC (DC) = 0.105 K/ W
120
110
Conduc tion Angle
100
90
30°
60°
90°
120°
180°
80
0
50
100
150
200
250
300
130
ST280S Series
RthJC (DC) = 0.105 K/ W
120
110
Conduc tion Period
100
90
30°
80
60°
90°
120°
180°
DC
70
0
50 100 150 200 250 300 350 400 450
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
350
180°
120°
90°
60°
30°
150
Conduc tion Angle
100
ST280SSeries
TJ = 125°C
50
K/
W
R
0.4
RMSLimit
K/
W
ta
el
-D
200
W
K/
0.3
1
0.
0.
25
K/
W
K/
W
=
250
0.
16
0.
2
A
300
hS
R t
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
(Stud Version), 280 A
K/
W
0.6
K/ W
0.8 K
/W
1.2 K
/W
0
0
50
100
150
200
250
300
25
Average On-state Current (A)
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
500
W
K/
K/
W
0.
16
K/
W
0. 2
K/
W
0.3
K/ W
0.4
K/ W
-D
ta
el
R
Conduc tion Period
150
03
0.
250
200 RMS Limit
K/
W
=
300
0.
12
SA
350
0.
08
W
K/
400
h
R t
DC
180°
120°
90°
60°
30°
450
06
0.
Maximum Average On-state Power Loss (W)
Fig. 3 - On-State Power Loss Characteristics
0.6 K
/W
ST280S Series
TJ = 125°C
100
50
1 K/ W
0
0
25
50 100 150 200 250 300 350 400 450
Average On-state Current (A)
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
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For technical questions, contact: [email protected]
Document Number: 94402
Revision: 11-Aug-08
ST280SPbF Series
7000
Pea k Half Sine Wave On-sta te Current (A)
Peak Half Sine Wave On-state Current (A)
Phase Control Thyristors
(Stud Version), 280 A
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
6500
6000
5500
5000
4500
4000
ST280SSeries
3500
3000
1
10
Vishay High Power Products
7000
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
6500
6000
5500
5000
4500
4000
ST280S Series
3500
3000
100
1
Number Of Equa l Amplitude Ha lf Cyc le Current Pulses (N)
10
100
Number Of Equa l Amplitude Half Cyc le Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
10000
TJ= 25°C
TJ = 125°C
1000
ST280SSeries
100
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJC (K/ W)
Fig. 7 - On-State Voltage Drop Characteristics
1
Steady State Value
RthJC = 0.105 K/ W
(DC Operation)
0.1
0.01
ST280SSeries
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Document Number: 94402
Revision: 11-Aug-08
For technical questions, contact: [email protected]
www.vishay.com
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ST280SPbF Series
Vishay High Power Products Phase Control Thyristors
(Stud Version), 280 A
Rec tangular gate pulse
a) Recommended load line for
rated di/ dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/ dt : 10V, 10ohms
10
tr<=1 µs
(b)
VGD
IGD
0.1
0.001
(1) PGM = 10W,
(2) PGM = 20W,
(3) PGM = 40W,
(4) PGM = 60W,
(a)
(1)
Device: ST280S Series
0.01
tp = 4ms
tp = 2ms
tp = 1ms
tp = 0.66ms
Tj=-40 °C
1
Tj=25 °C
Tj=125 °C
Instantaneous Gate Voltage (V)
100
(2)
(3) (4)
Frequenc y Limited by PG(AV)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
ST
28
0
S
06
P
0
V
PbF
1
2
3
4
5
6
7
8
9
1
-
Thyristor
2
-
Essential part number
3
-
0 = Converter grade
4
-
S = Compression bonding stud
5
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
6
-
P = Stud base 3/4"-16UNF-2A threads
7
-
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
8
-
V = Glass-metal seal
9
-
Lead (Pb)-free
Note: For metric device M16 x 1.5 contact factory
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com
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http://www.vishay.com/doc?95077
For technical questions, contact: [email protected]
Document Number: 94402
Revision: 11-Aug-08
Outline Dimensions
Vishay Semiconductors
TO-209AB (TO-93)
DIMENSIONS in millimeters (inches)
Glass metal seal
19 (0.75) MAX.
Ø 8.5 (0.33)
Ø 4.3 (0.17)
Red silicon rubber
C.S. 0.51 mm2
(0.0008 s.i.)
Red cathode
213.5 ± 10
(8.41 ± 0.39)
White gate
238.5 ± 10
(9.39 ± 0.39)
Red shrink
75 (2.95)
MIN.
White shrink
Ø 28.5 (1.12)
MAX.
28.5 (1.12)
MAX.
16 (0.63) MAX.
21 (0.83)
MAX.
SW 32
3/4"-16UNF-2A
35 (1.38)
MAX.
0° to 15°
4 MAX.
38 MAX.
Fast-on terminals
AMP. 280000-1
REF-250
23 MIN.
Flexible lead
C.S. 35 mm2
(0.054 s.i.)
Document Number: 95077
Revision: 19-May-10
For technical questions, contact: [email protected]
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Revision: 12-Mar-12
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Document Number: 91000