PD - 97572B IRFHS9351PbF HEXFET® Power MOSFET VDS VGS max -30 ±20 V V RDS(on) max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application System/load switch Features and Benefits Features Low RDSon (≤ 170mΩ) Low Thermal Resistance to PCB (≤ 19°C/W) Low Profile (≤ 1.0 mm) results in Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Orderable part number IRFHS9351TRPBF IRFHS9351TR2PBF Package Type PQFN 2mm x 2mm PQFN 2mm x 2mm Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C ID @ TC = 70°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V ID @ TC = 25°C IDM PD @TA = 25°C PD @ TA = 70°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range f f c Max. -30 ± 20 -2.3 -1.5 -5.1 -4.1 -3.4 -20 1.4 0.9 Units 0.01 -55 to + 150 W/°C d d d V A W °C Notes through are on page 2 www.irf.com 1 7/27/11 IRFHS9351PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS VDSS/ TJ RDS(on) V GS(th) VGS(th) IDSS IGSS Min. Typ. Max. Units Drain-to-Source Breakdown Voltage -30 ––– ––– V Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C ––– 135 170 ––– 235 290 Static Drain-to-Source On-Resistance m Gate Threshold Voltage -1.3 -1.8 -2.4 V Gate Threshold Voltage Coefficient ––– -4.6 ––– mV/°C Drain-to-Source Leakage Current ––– ––– -1.0 ––– ––– -150 μA Gate-to-Source Forward Leakage ––– ––– -100 Gate-to-Source Reverse Leakage ––– ––– 100 gfs Forward Transconductance 2.4 ––– ––– S ––– 1.9 ––– nC ––– 3.7 ––– ––– 0.6 ––– ––– 1.1 ––– h h Qg Total Gate Charge Qg Total Gate Charge Qgs Gate-to-Source Charge h Gate-to-Drain Charge h Gate R esistance h Qgd RG nA Conditions V GS = 0V, I D = -250μA Reference to 25°C, ID = -1mA V GS = -10V, I D = -3.1A e e V GS = -4.5V, ID = -2.5A V DS = V GS, ID = -10μA V DS = -24V, VGS = 0V V DS = -24V, VGS = 0V, T J = 125°C V GS = -20V V GS = 20V V DS = -10V, ID = -3.1A V DS = -15V,VGS = -4.5V,ID = - 3.1A V GS = -10V nC V DS = -15V I D = -3.1A ––– 17 ––– Turn-On Delay Time ––– 8.3 ––– V DD = -15V, V GS = -4.5V tr Rise Time ––– 30 ––– I D = -3.1A td(off ) Turn-Off Delay Time ––– 6.3 ––– tf Fall Time ––– 7.9 ––– Ciss Input Capacitance ––– 160 ––– td(on) Coss Output Capacitance ––– 39 ––– Crss Reverse Transfer C apacitance ––– 26 ––– Min. Typ. Max. ns e RG = 1.8 See Figs. 19a & 19b V GS = 0V pF V DS = -25V ƒ = 1.0KHz Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM ––– -5.1 ––– ––– -20 c -1.2 V SD Diode Forward Voltage ––– ––– trr Reverse Recovery Time ––– 20 Qrr Reverse Recovery Charge ––– 42 Conditions MOSFET symbol A Pulsed Source Current (Body Diode) ––– Units integral reverse Parameter JC (Bottom) R JC (Top) g Junction-to-Case g Junction-to-Case f R JA Junction-to-Ambient R JA Junction-to-Ambient (t<10s) f G p-n junction diode. S e V TJ = 25°C, IS = -3.1A, VG S = 0V 30 ns 63 nC TJ = 25°C, IF = -3.1A, V DD = -15V di/dt = 370/μs e Thermal Resistance R D showing the Typ. Max. ––– 19 ––– 170 90 ––– Units °C/W 75 Notes: Repetitive rating; pulse width limited by max. junction temperature. Current limited by package. . Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board. Rθ is measured at TJ of approximately 90°C. For DESIGN AID ONLY, not subject to production testing. . 2 www.irf.com IRFHS9351PbF 100 100 VGS -10V -8.0V -5.0V -4.5V -3.5V -3.3V -3.0V -2.8V 10 BOTTOM 1 -2.8V 10 BOTTOM 1 -2.8V ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 25°C 0.1 0.1 1 Tj = 150°C 0.1 10 0.1 100 10 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) -ID, Drain-to-Source Current(A) 1 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) 10 TJ = 150°C 1 TJ = 25°C VDS = -15V ≤60μs PULSE WIDTH 0.1 1 2 3 4 5 6 7 ID = -3.1A VGS = -10V 1.4 1.2 1.0 0.8 0.6 8 -60 -40 -20 0 Fig 3. Typical Transfer Characteristics 1000 Fig 4. Normalized On-Resistance vs. Temperature 14 VGS = 0V, f = 1 KHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd -VGS, Gate-to-Source Voltage (V) ID= -3.1A Coss = Cds + Cgd Ciss 100 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) -VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) VGS -10V -8.0V -5.0V -4.5V -3.5V -3.3V -3.0V -2.8V TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP Coss Crss VDS= -24V 12 VDS= -15V 10 8 6 4 2 0 10 1 10 100 -VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 0 1 2 3 4 5 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRFHS9351PbF 100 -ID, Drain-to-Source Current (A) -ISD, Reverse Drain Current (A) 100 10 TJ = 150°C 1 TJ = 25°C VGS = 0V 0.6 0.8 1.0 1.2 10 1 DC 0.1 10msec Tc = 25°C Tj = 150°C Single Pulse 0.1 1.4 1 10 100 VDS, Drain-to-Source Voltage (V) -VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 6 -V GS(th), Gate threshold Voltage (V) 2.5 5 ID , Drain Current (A) 100μsec 1msec 0.01 0.1 0.4 OPERATION IN THIS AREA LIMITED BY RDS(on) 4 3 2 1 0 25 50 75 100 125 150 2.0 ID = -10uA 1.5 1.0 0.5 -75 -50 -25 TC , CaseTemperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( ZthJC ) 100 10 D = 0.50 0.20 1 0.10 0.05 0.02 0.01 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com 500 ( Ω) RDS(on), Drain-to -Source On Resistance m RDS(on), Drain-to -Source On Resistance (mΩ) IRFHS9351PbF ID = -3.1A 400 300 TJ = 125°C 200 TJ = 25°C 100 0 5 10 15 20 500 400 300 Vgs = -4.5V 200 Vgs = -10V 100 25 0 2 4 6 8 -ID, Drain Current (A) -VGS, Gate -to -Source Voltage (V) Fig 13. Typical On-Resistance vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage 400 Power (W) 300 200 100 0 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 Time (sec) Fig 14. Typical Power vs. Time D.U.T * Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD + - Re-Applied Voltage Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Body Diode Reverse Polarity of D.U.T for P-Channel www.irf.com VDD Forward Drop Inductor Current Inductor Curent Ripple ≤ 5% * P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer D= Period P.W. + ISD * VGS = 5V for Logic Level Devices Fig 15. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs 5 IRFHS9351PbF Id Vds Vgs L VCC DUT 0 20K 1K Vgs(th) SS Qgodr Fig 16a. Gate Charge Test Circuit I AS D.U.T RG IAS -V GS -20V tp Qgs2 Qgs1 Fig 16b. Gate Charge Waveform L VDS Qgd VDD A DRIVER 0.01Ω tp V(BR)DSS 15V Fig 17b. Unclamped Inductive Waveforms Fig 17a. Unclamped Inductive Test Circuit VDS RD td(on) VGS RG t d(off) tf VGS D.U.T. 10% + V DD -VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 18a. Switching Time Test Circuit 6 tr 90% VDS Fig 18b. Switching Time Waveforms www.irf.com IRFHS9351PbF PQFN Package Details PQFN Part Marking 9351 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRFHS9351PbF PQFN Tape and Reel CORE TAPE Remark: Width Table 2: COVER TAPE (WIDTH) 5.4 mm 9.5 mm - Dimension above are typical dimensions. - Cover tape thickness is 0.048mm +/- 0.005mm. - Surface resistivity 10E5 < Rs <10E9. TOLERANCE +/- 0.1 mm +/- 0.1 mm Qualification information † †† Qualification level Consumer (per JEDEC JESD47F ††† guidelines ) MSL1 Moisture Sensitivity Level RoHS compliant PQFN 2mm x 2mm (per IPC/JEDEC J-STD-020D†† † ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ††† Applicable version of JEDEC standard at the time of product release. † Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 101N. Sepulveda, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/11 8 www.irf.com