PD-97288 RevA Integrated Power Hybrid IC for Low Voltage Motor Applications IRAM136-3063B Series 30A, 600V with Internal Shunt Resistor Description International Rectifier's IRAM136-3063B is a 30A, 600V Integrated Power Hybrid IC with Internal Shunt Resistor for Appliance Motor Drives applications such air conditioning systems and compressor drivers as well as for light industrial application. IR's technology offers an extremely compact, high performance AC motor driver in a single isolated package to simplify design. This advanced HIC is a combination of IR's low VCE(on) Punch-Through IGBT technology and the industry benchmark 3-Phase high voltage, high speed driver in a fully isolated thermally enhanced package. A builtin temperature monitor and over-current and over-temperature protections, along with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and failsafe operation. Using a new developed single in line package (SiP3) with heat spreader for the power die along with full transfer mold structure minimizes PCB space and resolves isolation problems to heatsink. Features • • • • • • • • • • • Integrated Gate Drivers Temperature Monitor and Protection Overcurrent shutdown Low VCE(on) Advance Planar Super Rugged Technology Undervoltage lockout for all channels Matched propagation delay for all channels 5V Schmitt-triggered input logic Cross-conduction prevention logic Lower di/dt gate driver for better noise immunity Motor Power up to 3.3kW / 85~253 Vdc Fully Isolated Package, Isolation 2000VRMS min Absolute Maximum Ratings Parameter Description VCES / VRRM IGBT/Diode Blocking Voltage Value 600 V+ IO @ TC=25°C Positive Bus Input Voltage 450 Maximum Output Current 30 IO @ TC=100°C RMS Phase Current (Note 1) 15 Units V A IO Pulsed RMS Phase Current (Note 2) 50 FPWM PWM Carrier Frequency 20 kHz PD Power dissipation per IGBT @ TC =25°C 73 W VRMS VISO Isolation Voltage (1min) 2000 TJ (IGBT & Diode & IC) Maximum Operating Junction Temperature +150 TC Operating Case Temperature Range -20 to +100 TSTG Storage Temperature Range -40 to +125 T Mounting torque Range (M4 screw) 0.7 to 1.17 °C Nm Note 1: Sinusoidal Modulation at V+=400V, TJ=150°C, FPWM=6kHz, Modulation Depth=0.8, PF=0.6, See Figure 3. Note 2: tP<100ms; TC=25°C; FPWM=6kHz. Limited by IBUS-ITRIP, see Table "Inverter Section Electrical Characteristics" www.irf.com 1 IRAM136-3063B Internal Electrical Schematic – IRAM136-3063B V+ (10) RS V- (12) R1 VB1 (1) U, VS1 (2) C1 VB2 (4) V, VS2 (5) C2 VB3 (7) W, VS3 (8) C3 R3 R5 R2 22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3 23 VS1 LO1 16 24 HO1 R15 LO2 15 25 VB1 1 VCC HIN1 (13) HIN2 (14) HIN3 (15) 2 HIN1 LIN1 (16) 5 LIN1 Driver IC R4 LO3 14 R6 3 HIN2 4 HIN3 LIN2 LIN3 F ITRIP EN RCIN VSS COM 6 7 8 9 10 11 12 13 LIN2 (17) LIN3 (18) FAULT(19) THERMISTOR R9 ISENSE (20) R8 POSISTOR R11 VDD (21) C7 C4 R7 R12 R13 R14 C5 C6 VSS (22) 2 www.irf.com IRAM136-3063B Absolute Maximum Ratings (Continued) Symbol Parameter Min Max IBDF Units Conditions Bootstrap Diode Peak Forward Current --- 4.5 A tP= 10ms, TJ = 150°C, TC=100°C PBR Peak Bootstrap Resistor Peak Power (Single Pulse) --- 25.0 W tP=100μs, TC =100°C VS1,2,3 High side floating supply offset voltage VB1,2,3 - 25 VB1,2,3 +0.3 V VB1,2,3 High side floating supply voltage -0.3 600 V VCC Low Side and logic fixed supply voltage -0.3 20 V VIN Input voltage LIN, HIN, ITrip -0.3 Lower of (VSS+15V) or VCC+0.3V V Inverter Section Electrical Characteristics @TJ= 25°C Symbol Parameter Min Typ Max V(BR)CES Collector-to-Emitter Breakdown Voltage 600 --- --- V VIN=5V, IC=500μA V(BR)CES / T Temperature Coeff. Of Breakdown Voltage --- 0.5 --- V/°C VIN=5V, IC=1.0mA (25°C - 150°C) VCE(ON) Collector-to-Emitter Saturation Voltage --- 1.90 2.7 --- 2.10 2.8 ICES Zero Gate Voltage Collector Current --- 5 150 --- 80 --- VFM Diode Forward Voltage Drop --- 1.6 2.5 --- 1.5 2.2 VBDFM Bootstrap Diode Forward Voltage Drop -- -- 1.25 --- --- 1.10 RBR Bootstrap Resistor Value --- 22 --- TJ=25°C RBR/RBR Bootstrap Resistor Tolerance --- --- ±5 % TJ=25°C IBUS_TRIP Current Protection Threshold (positive going) 44 --- 58 A tON > 175μs www.irf.com Units Conditions V A V V IC=15A, VCC=15V IC=15A, VCC=15V, TJ=125°C VIN=5V, V+=600V VIN=5V, V+=600V, TJ=125°C IC=15A IC=15A, TJ=125°C IF=1A IF=1A, TJ=125°C 3 IRAM136-3063B Inverter Section Switching Characteristics @ TJ= 25°C Symbol Parameter Min Typ Max EON Turn-On Switching Loss --- 550 870 EOFF Turn-Off Switching Loss --- 240 300 ETOT Total Switching Loss --- 790 1170 EREC Diode Reverse Recovery energy --- 65 125 tRR Diode Reverse Recovery time --- 50 --- EON Turn-On Switching Loss --- 830 1180 EOFF Turn-off Switching Loss --- 400 550 ETOT Total Switching Loss --- 1230 1730 EREC Diode Reverse Recovery energy --- 120 205 tRR Diode Reverse Recovery time --- 140 --- QG Turn-On IGBT Gate Charge RBSOA Reverse Bias Safe Operating Area --- 72 108 Units Conditions μJ IC=15A, V+=400V VCC=15V, L=2mH Energy losses include "tail" and diode reverse recovery See CT1 ns μJ IC=15A, V+=400V VCC=15V, L=2mH, TJ=125°C Energy losses include "tail" and diode reverse recovery See CT1 ns nC + IC=20A, V =400V, VGE=15V TJ=150°C, IC=60A, VP=600V V+= 480V VCC=+15V to 0V FULL SQUARE See CT3 TJ=150°C, VP=600V, SCSOA Short Circuit Safe Operating Area 10 --- --- μs V+= 500V, VCC=+15V to 0V See CT2 Recommended Operating Conditions Driver Function The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V differential Symbol Definition Min Typ Max VB1,2,3 Units High side floating supply voltage VS+12 VS+15 VS+20 VS1,2,3 High side floating supply offset voltage Note 4 --- 400 VCC Low side and logic fixed supply voltage 12 15 20 VT/ITRIP T/ITRIP input voltage VSS --- VSS+5 VIN Logic input voltage LIN, HIN VSS --- VSS+5 V HIN High side PWM pulse width 1 --- --- μs Deadtime External dead time between HIN and LIN 2 --- --- μs V V Note 3: For more details, see IR21363 data sheet Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS. (please refer to DT97-3 for more details) 4 www.irf.com IRAM136-3063B Static Electrical Characteristics Driver Function VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM/ITRIP and are applicable to all six channels. (Note 3) Symbol Definition Min Typ Max Units 3.0 --- --- V VIH Logic "0" input voltage VIL Logic "1" input voltage --- --- 0.8 V VCCUV+, VBSUV+ VCC and VBS supply undervoltage positive going threshold 10.6 11.1 11.6 V VCCUV-, VBSUV- VCC and VBS supply undervoltage negative going threshold 10.4 10.9 11.4 V VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis --- 0.2 --- V VIN,Clamp Input Clamp Voltage (HIN, LIN, T/ITRIP) IIN=10μA 4.9 5.2 5.5 V IQBS Quiescent VBS supply current VIN=0V --- --- 165 μA IQCC Quiescent VCC supply current VIN=0V --- --- 3.35 mA ILK Offset Supply Leakage Current --- --- 60 μA IIN+ Input bias current VIN=5V --- 200 300 μA IIN- Input bias current VIN=0V --- 100 220 μA --- 30 100 μA ITRIP+ ITRIP bias current VITRIP=5V ITRIP- ITRIP bias current VITRIP=0V --- 0 1 μA V(ITRIP) ITRIP threshold Voltage 440 490 540 mV V(ITRIP,HYS) ITRIP Input Hysteresis --- 70 --- mV Dynamic Electrical Characteristics Driver only timing unless otherwise specified.) Symbol Parameter Min Typ Max TON Input to Output propagation turnon delay time (see fig.11) --- 600 --- TOFF Input to Output propagation turnoff delay time (see fig. 11) --- 700 --- ns TFLIN Input Filter time (HIN, LIN) 100 200 --- ns VIN=0 & VIN=5V TBLT-Trip ITRIP Blancking Time 100 150 ns VIN=0 & VIN=5V DT Dead Time (VBS=VDD=15V) 220 290 MT Matching Propagation Delay Time (On & Off) --- 40 TITrip ITrip to six switch to turn-off propagation delay (see fig. 2) --- TFLT-CLR Post ITrip to six switch to turn-off clear time (see fig. 2) www.irf.com Units Conditions ns VCC=VBS= 15V, IC=15A, V+=400V ns VBS=VCC=15V 75 ns VCC= VBS= 15V, external dead time> 400ns --- 3.75 μs VCC=VBS= 15V, IC=15A, V+=400V --- 34 --- --- 29 --- 360 ms TC = 25°C TC = 100°C 5 IRAM136-3063B Thermal and Mechanical Characteristics Symbol Parameter Min Typ Max Rth(J-C) Thermal resistance, per IGBT --- 1.5 1.7 Rth(J-C) Thermal resistance, per Diode --- 2.5 --- Rth(C-S) Thermal resistance, C-S --- 0.1 --- CD Creepage Distance 3.5 --- --- Units Conditions Flat, greased surface. Heatsink °C/W compound thermal conductivity 1W/mK mm See outline Drawings Internal Current Sensing Resistor - Shunt Characteristics Symbol Parameter Min Typ Max Units Conditions RShunt Resistance 9.4 9.6 9.8 m TCoeff Temperature Coefficient 0 --- 200 ppm/°C PShunt Power Dissipation --- --- 4.5 W TRange Temperature Range -20 --- 125 °C TC = 25°C -40°C < TC < 100°C Internal NTC - Thermistor Characteristics Parameter Definition Min Typ Max R25 Units Conditions Resistance 97 100 103 k TC = 25°C R125 Resistance 2.25 2.52 2.8 k TC = 125°C B B-constant (25-50°C) 4165 4250 4335 k Temperature Range -40 --- 125 °C Typ. Dissipation constant --- 1 --- R2 = R1e [B(1/T2 - 1/T1)] mW/°C TC = 25°C Input-Output Logic Level Table V+ Ho HIN1,2,3 U,V,W (20,22,23) IC Driver (10,6,2) LIN1,2,3 Lo (24,25,26) 6 FLT/EN ITRIP HIN1,2,3 LIN1,2,3 U,V,W 1 0 1 0 V+ 1 0 0 1 0 1 0 0 0 Off 1 1 X X Off 0 X X X Off www.irf.com IRAM136-3063B Figure 1. Input/Output Timing Diagram HIN1,2,3 LIN1,2,3 50% 50% ITRIP U,V,W 50% 50% TITRIP TFLT-CLR Figure 2. ITRIP Timing Waveform Note 7: The shaded area indicates that both high-side and low-side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load. www.irf.com 7 IRAM136-3063B Module Pin-Out Description 8 Pin Name 1 VB1 2 U, VS1 Description High Side Floating Supply Voltage 1 Output 1 - High Side Floating Supply Offset Voltage 3 NA none 4 VB2 High Side Floating Supply voltage 2 5 V,VS2 6 NA none 7 VB3 High Side Floating Supply voltage 3 8 W,VS3 9 NA + Output 2 - High Side Floating Supply Offset Voltage Output 3 - High Side Floating Supply Offset Voltage none 10 V Positive Bus Input Voltage 11 NA none 12 V- Negative Bus Input Voltage 13 HIN1 Logic Input High Side Gate Driver - Phase 1 14 HIN2 Logic Input High Side Gate Driver - Phase 2 15 HIN3 Logic Input High Side Gate Driver - Phase 3 16 LIN1 Logic Input Low Side Gate Driver - Phase 1 17 LIN2 Logic Input Low Side Gate Driver - Phase 2 18 LIN3 Logic Input Low Side Gate Driver - Phase 3 19 Fault/TMON 20 ISense 21 VCC +15V Main Supply 22 VSS Negative Main Supply Temperature Monitor and Fault Function Current Monitor www.irf.com IRAM136-3063B Typical Application Connection IRAM136-3063B 1 VB1 BOOT-STRAP CAPACITORS U VB2 V VB3 V+ W V+ DC BUS CAPACITORS VHIN1 +5V HIN2 HIN3 LIN1 LIN2 LIN3 FLT/TMON Date Code Lot # IRAM136-3063B 3-Phase AC MOTOR ITRIP CONTROLLER 12kohm VSS +5V 22 Fault & Temp Monitor Vcc (15 V) IMonitor +15V 0.1m 10m 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1μF, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3). 4. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5). 5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent condition must be cleared before resuming operation. 6. Fault/TMON Monitor pin must be pulled-up to +5V. www.irf.com 9 IRAM136-3063B Maximum Output Phase RMS Current - A 22 20 18 16 14 12 10 TC = 80ºC TC = 90ºC TC = 100ºC 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 PWM Sw itching Frequency - kHz Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency Sinusoidal Modulation, V+=400V, TJ=150°C, Modulation Depth=0.8, PF=0.6 Maximum Output Phase RMS Current - A 18 16 14 12 10 8 FPWM = 6kHz FPWM = 9kHz FPWM = 12kHz 6 4 2 0 1 10 100 Modulation Frequency - Hz Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency Sinusoidal Modulation, V+=400V, TJ=100°C, Modulation Depth=0.8, PF=0.6 10 www.irf.com IRAM136-3063B 350 Total Power Loss- W 300 250 200 150 100 IOUT = 18A IOUT = 15A IOUT = 12A 50 0 0 2 4 6 8 10 12 14 16 18 20 PWM Sw itching Frequency - kHz Figure 5. Total Power Losses vs. PWM Switching Frequency Sinusoidal Modulation, V+=400V, TJ=150°C, Modulation Depth=0.8, PF=0.6 350 Total Power Loss - W 300 250 200 150 FPWM = 12kHz FPWM = 9kHz FPWM = 6kHz 100 50 0 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Phase Current - ARMS Figure 6. Total Power Losses vs. Output Phase Current Sinusoidal Modulation, V+=400V, TJ=150°C, Modulation Depth=0.8, PF=0.6 www.irf.com 11 IRAM136-3063B Max Allowable Case Temperature - ºC 160 140 120 100 80 60 FPWM = 6kHz FPWM = 9kHz FPWM = 12kHz 40 20 0 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Phase Current - ARMS Figure 7. Maximum Allowable Case Temperature vs. Output RMS Current per Phase Sinusoidal Modulation, V+=400V, TJ=150°C, Modulation Depth=0.8, PF=0.6 IGBT Junction Temperature - °C 160 150 140 130 120 110 98.3 100 65 70 75 80 85 90 95 100 105 Internal Therm istor Tem perature Equivalent Read Out - °C Figure 8. Estimated Maximum MOSFET Junction Temperature vs. Thermistor Temperature Sinusoidal Modulation, V+=400V, Iphase=15Arms, fsw=6kHz, fmod=50Hz, MI=0.8, PF=0.6 12 www.irf.com IRAM136-3063B 5.0 +5V Thermistor Pin Read-Out Voltage - V 4.5 REXT 4.0 3.5 3.0 2.5 VTherm TTHERM °C -40 -35 -30 -25 RTHERM TTHERM RTHERM TTHERM °C °C 4397119 25 100000 90 3088599 30 79222 95 2197225 35 63167 100 1581881 40 50677 105 RTHERM 7481 6337 5384 4594 2.0 -20 -15 1151037 846579 45 50 40904 33195 110 115 3934 3380 1.5 -10 -5 0 628988 471632 357012 55 60 65 27091 22224 18322 120 125 130 2916 2522 2190 5 10 272500 209710 70 75 15184 12635 135 140 1907 1665 15 20 162651 127080 80 85 10566 8873 145 150 1459 1282 1.0 0.5 0.0 -40 -30 -20 -10 0 RTherm Min Avg. Max 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 Therm istor Tem perature - °C Recommended Bootstrap Capacitor - F Figure 9. Thermistor Readout vs. Temperature (12Kohm pull-up resistor, 5V) and Normal Thermistor Resistance values vs. Temperature Table. 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 15F 10F 6.8F 4.7F 0 5 10 15 20 PWM Frequency - kHz Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency www.irf.com 13 IRAM136-3063B Figure 11. Switching Parameter Definitions Figure 11a. Input to Output propagation turn-on delay time. Figure 11b. Input to Output propagation turn-off delay time. Figure 11c. Diode Reverse Recovery. 14 www.irf.com IRAM136-3063B V+ Ho Hin1,2,3 IC Driver U,V,W Lo Lin1,2,3 Figure CT1. Switching Loss Circuit V+ Lin1,2,3 IN Ho Hin1,2,3 IC Driver U,V,W IO Lo Io Figure CT2. S.C.SOA Circuit V+ IC Driver Lin1,2,3 IN Ho Hin1,2,3 U,V,W IO Lo Io Figure CT3. R.B.SOA Circuit www.irf.com 15 IRAM136-3063B Package Outline Missing Pin : 3,6,9,11 Ԙ note3 note4 IRAM136-3063B P 4KB00 note2 note5 Ԛ ԙ note1: Unit Tolerance is +0.5mm, 䇭䇭䇭 Unless Otherwise Specified. note2: Mirror Surface Mark indicates Pin1 Identification. note3: Characters Font in this drawing differs from 䇭䇭䇭䇭 Font shown on Module. note4: Lot Code Marking. Characters Font in this drawing differs from 䇭䇭䇭䇭 Font shown on Module. note5: “P” Character denotes Lead Free. Characters Font in this drawing differs from Font shown on Module. For mounting instruction see AN-1049 Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 11/2007 16 www.irf.com