TSHG6410 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES DESCRIPTION • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 18° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition TSHG6410 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. APPLICATIONS 94 8389 in • Infrared radiation source for operation with CMOS cameras • High speed IR data transmission PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 90 ± 18 850 20 TSHG6410 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHG6410 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 Surge forward current tp = 100 µs IFSM 1 A PV 180 mW Power dissipation Junction temperature Operating temperature range Storage temperature range Tj 100 °C Tamb - 40 to + 85 °C Tstg - 40 to + 100 °C Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W Note Tamb = 25 °C, unless otherwise specified Document Number: 81870 Rev. 1.2, 08-Jul-09 For technical questions, contact: [email protected] www.vishay.com 1 TSHG6410 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 200 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 RthJA = 230 K/W 100 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 10 21142 20 30 40 50 60 70 80 0 90 100 0 Tamb - Ambient Temperature (°C) 21143 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs Temperature coefficient of VF Reverse current Forward voltage Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe MIN. TYP. MAX. VF 1.5 1.8 VF 2.3 IF = 1 mA TKVF - 1.8 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie 90 V V mV/K 10 µA 135 mW/sr 125 45 UNIT pF IF = 1 A, tp = 100 µs Ie 900 mW/sr IF = 100 mA, tp = 20 ms φe 55 mW IF = 100 mA TKφe - 0.35 %/K ϕ ± 18 Angle of half intensity deg Peak wavelength IF = 100 mA λp Spectral bandwidth IF = 100 mA Δλ 40 nm Temperature coefficient of λp IF = 100 mA TKλp 0.25 nm/K Rise time IF = 100 mA tr 20 ns Fall time IF = 100 mA tf 13 ns IDC = 70 mA, IAC = 30 mA pp fc 18 MHz d 2.1 mm Cut-off frequency Virtual source diameter 820 850 880 nm Note Tamb = 25 °C, unless otherwise specified www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 81870 Rev. 1.2, 08-Jul-09 TSHG6410 High Speed Infrared Emitting Diode, Vishay Semiconductors 850 nm, GaAlAs Double Hetero BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1000 Tamb < 50 °C tP/T = 0.01 1000 Radiant Power (mW) IF - Forward Current (mA) 0.02 0.05 0.1 10 1 e- 0.2 100 0.5 100 0.01 0.1 0.1 1 10 100 tP - Pulse Duration (ms) 16031 1 100 1.25 Φe, rel - Relative Radiant Power 1000 100 tP = 100 µs tP/T = 0.001 10 1.0 0.75 0.5 0.25 0 1 18873 1 3 2 VF - Forward Voltage (V) 4 800 Fig. 7 - Relative Radiant Power vs. Wavelength 0° Ie rel - Relative Radiant Intensity 1000 100 10 tP = 0.1 ms 900 λ- Wavelength (nm) 16972 Fig. 4 - Forward Current vs. Forward Voltage 850 10° 20° 30° 40° 1.0 50° 0.9 60° 0.8 70° ϕ - Angular Displacement 0 Ie - Radiant Intensity (mW/sr) 1000 Fig. 6 - Radiant Power vs. Forward Current Fig. 3 - Pulse Forward Current vs. Pulse Duration IF - Forward Current (mA) 10 IF - Forward Current (mA) 16971 80° 0.7 1 1 21308 10 100 1000 21355 0.6 0.4 0.2 0 IF - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Document Number: 81870 Rev. 1.2, 08-Jul-09 Fig. 8 - Relative Radiant Intensity vs. Angular Displacement For technical questions, contact: [email protected] www.vishay.com 3 TSHG6410 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero PACKAGE DIMENSIONS in millimeters C R 2.49 (sphere) 35.3 ± 0.55 < 0.7 8.7 ± 0.3 (4.5) 7.7 ± 0.15 Ø 5.8 ± 0.15 A Area not plane Ø 5 ± 0.15 + 0.2 - 0.1 1 min. 0.6 0.5 0.5 + 0.15 - 0.05 + 0.15 - 0.05 technical drawings according to DIN specifications 2.54 nom. Drawing-No.: 6.544-5259.11-4 Issue: 2; 19.05.09 21809 www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 81870 Rev. 1.2, 08-Jul-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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