PD - 97631
IRLML2244TRPbF
VDS
-20
V
VGS Max
± 12
V
RDS(on) max
54
mΩ
95
mΩ
(@VGS = -4.5V)
RDS(on) max
(@VGS = -2.5V)
HEXFET® Power MOSFET
G 1
3 D
S
2
Micro3TM (SOT-23)
IRLML2244TRPbF
Application(s)
• System/Load Switch
Features and Benefits
Benefits
Features
Low RDS(on) ( ≤ 54mΩ)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
Lower switching losses
Multi-vendor compatibility
results in Easier manufacturing
Environmentally friendly
⇒
Increased reliability
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
V
VDS
Drain-Source Voltage
-20
ID @ TA = 25°C
Continuous Drain Current, VGS @ -4.5V
-4.3
ID @ TA = 70°C
Continuous Drain Current, VGS @ -4.5V
-3.4
IDM
Pulsed Drain Current
-18
PD @TA = 25°C
Maximum Power Dissipation
1.3
PD @TA = 70°C
Maximum Power Dissipation
0.8
Linear Derating Factor
0.01
VGS
Gate-to-Source Voltage
± 12
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
A
W
W/°C
Thermal Resistance
Symbol
Parameter
RθJA
Junction-to-Ambient e
RθJA
Junction-to-Ambient (t<10s)
f
Typ.
Max.
–––
100
–––
99
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 10
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1
1/24/11
IRLML2244TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
-20
–––
–––
–––
0.01
–––
–––
42
54
–––
71
95
-0.4
–––
-1.1
–––
–––
1
–––
–––
150
Gate-to-Source Forward Leakage
–––
–––
-100
Gate-to-Source Reverse Leakage
–––
–––
100
Internal Gate Resistance
–––
8.9
–––
Ω
S
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
IGSS
RG
Min. Typ. Max. Units
Drain-to-Source Leakage Current
gfs
Forward Transconductance
6.5
–––
–––
Qg
Total Gate Charge
–––
6.9
–––
V
Conditions
VGS = 0V, ID = -250μA
V/°C Reference to 25°C, ID = -1mA
mΩ
V
μA
nA
VGS = -4.5V, ID = -4.3A
VGS = -2.5V, ID = -3.4A
d
d
VDS = VGS, ID = -10μA
VDS =-16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS = -12V
VDS = -10V, ID =-4.3A
ID = -4.3A
nC
VDS =-10V
Qgs
Gate-to-Source Charge
–––
1.0
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
2.9
–––
VGS = -4.5V
td(on)
Turn-On Delay Time
–––
7.0
–––
VDD =-10V
tr
Rise Time
–––
12
–––
td(off)
Turn-Off Delay Time
–––
34
–––
tf
Fall Time
–––
25
–––
Ciss
Input Capacitance
–––
570
–––
Coss
Output Capacitance
–––
160
–––
Crss
Reverse Transfer Capacitance
–––
110
–––
ns
d
d
ID = -1A
RG = 6.8Ω
VGS = -4.5V
VGS = 0V
pF
VDS = -16V
ƒ = 1.0KHz
Source - Drain Ratings and Characteristics
Symbol
IS
Parameter
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
c
(Body Diode)
Min. Typ. Max. Units
–––
–––
-1.3
–––
–––
-18
Conditions
MOSFET symbol
A
D
showing the
integral reverse
G
p-n junction diode.
S
VSD
Diode Forward Voltage
–––
–––
-1.2
V
TJ = 25°C, IS = -4.3A, VGS = 0V
trr
Reverse Recovery Time
–––
21
32
ns
TJ = 25°C, VR = -16V, IF=-4.3A
Qrr
Reverse Recovery Charge
–––
9.0
14
nC
di/dt = 100A/μs
2
d
d
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IRLML2244TRPbF
100
100
10
BOTTOM
1
-1.5V
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
VGS
-10V
-4.5V
-3.0V
-2.5V
-2.3V
-2.0V
-1.8V
-1.5V
≤60μs PULSE WIDTH
Tj = 25°C
1
10
BOTTOM
≤60μs PULSE WIDTH
Tj = 150°C
0.1
100
1
10
100
-V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
1.3
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (A)
-1.5V
1
0.1
0.1
0.1
10
VGS
-10V
-4.5V
-3.0V
-2.5V
-2.3V
-2.0V
-1.8V
-1.5V
10
T J = 150°C
T J = 25°C
1
VDS = -15V
≤60μs PULSE WIDTH
0.1
1.0
1.5
2.0
2.5
-V GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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ID = -4.3A
VGS = -4.5V
1.1
0.9
3.0
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLML2244TRPbF
10000
14
VGS = 0V,
f = 1 KHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
ID= -4.3A
-V GS, Gate-to-Source Voltage (V)
Ciss
Coss
Crss
100
VDS= -16V
VDS= -10V
10
8
6
4
2
10
0
1
10
100
0
-VDS, Drain-to-Source Voltage (V)
8
12
16
20
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
-I D, Drain-to-Source Current (A)
100
10
T J = 150°C
T J = 25°C
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100μsec
1
1msec
0.1
0.1
10msec
T A = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.01
0.3
0.5
0.7
0.9
-VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
4
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
-I SD, Reverse Drain Current (A)
C, Capacitance (pF)
C oss = C ds + C gd
1000
12
1.1
0
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLML2244TRPbF
RD
V DS
5
V GS
4
-ID, Drain Current (A)
D.U.T.
RG
-
+
3
VDD
-VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2
Fig 10a. Switching Time Test Circuit
1
td(on)
tr
t d(off)
tf
VGS
0
25
50
75
100
125
150
10%
T A , Ambient Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
90%
VDS
Fig 10b. Switching Time Waveforms
Thermal Response ( Z thJA ) °C/W
1000
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
120
RDS(on), Drain-to -Source On Resistance ( mΩ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRLML2244TRPbF
ID = -4.3A
100
80
60
T J = 125°C
40
T J = 25°C
20
2
4
6
8
10
12
200
160
Vgs = -2.5V
120
80
40
Vgs = -4.5V
0
0
5
10
15
20
25
30
35
-I D, Drain Current (A)
-VGS, Gate -to -Source Voltage (V)
Fig 13. Typical On-Resistance Vs. Drain
Current
Fig 12. Typical On-Resistance Vs. Gate
Voltage
Id
Vds
Vgs
L
DUT
0
Vgs(th)
Qgodr
Qgd
SS
Qgs2 Qgs1
Fig 14a. Basic Gate Charge Waveform
6
20K
1K
VCC
Fig 14b. Gate Charge Test Circuit
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IRLML2244TRPbF
100
80
1.0
Power (W)
-V GS(th), Gate threshold Voltage (V)
1.5
ID = -10uA
ID = -25uA
ID = -250uA
0.5
60
40
20
0
0.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
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1E-005 0.0001
0.001
0.01
0.1
1
10
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRLML2244TRPbF
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
A
6
5
SYMBOL
D
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
L2
A
A2
3
6
C
E
E1
1
2
0.15 [0.006] M C B A
0.10 [0.004] C
A1
5
B
3X b
e
0.20 [0.008] M C B A
NOTES:
e1
H 4
L1
Recommended Footprint
c
L2
0.972
0.950
0.802
3X L
7
1.900
MILLIMETERS
INCHES
MIN
MAX
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
MAX
0.0004 %6&
%6&
REF
BSC
0
8
2.742
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
Micro3 (SOT-23/TO-236AB) Part Marking Information
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YE AR
DAT E CODE
PART NUMBER
Cu WIRE
HALOGE N F REE
LEAD F REE
LOT CODE
X = PART NUMBE R CODE REFE RENCE:
A = IRLML2402
B = IRLML2803
C = IRLML6302
D = IRLML5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRLML5203
I = IRLML0030
J = IRLML2030
K = IRLML0100
L = IRLML0060
M = IRLML0040
N = IRLML2060
P = IRLML9301
R = IRLML9303
S = IRLML6244
T = IRLML6246
U = IRLML6344
V = IRLML6346
W = IRF ML8244
X = IRLML2244
Y = IRLML2246
Z = IRFML9244
Note: A line above the work week
(as s hown here) indicates Lead - F ree.
YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY A LET TE R
YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRLML2244TRPbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
4.1 ( .161 )
3.9 ( .154 )
TR
FEED DIRECTION
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
4.1 ( .161 )
3.9 ( .154 )
1.32 ( .051 )
1.12 ( .045 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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9
IRLML2244TRPbF
Orderable part number
Package Type
IRLML2244TRPbF
Micro3
Note
Standard Pack
Form
Quantity
Tape and Reel
3000
Qualification information†
Qualification level
Moisture Sensitivity Level
Cons umer
(per JE DE C JE S D47F
Micro3
RoHS compliant
††
†††
guidelines )
MS L1
†††
(per IPC/JE DE C J-S T D-020D
Yes
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board
Refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/2011
10
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