IRF IRLML0030TRPBF

PD - 96278A
IRLML0030TRPbF
VDS
30
V
VGS Max
± 20
V
RDS(on) max
27
mΩ
40
mΩ
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
HEXFET® Power MOSFET
* '
6 Micro3TM (SOT-23)
IRLML0030TRPbF
Application(s)
• Load/ System Switch
Features and Benefits
Benefits
Features
Low RDS(on) ( ≤ 27mΩ)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Industrial qualification
Lower switching losses
Multi-vendor compatibility
results in Easier manufacturing
⇒
Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
VDS
Parameter
Max.
Units
30
V
ID @ TA = 25°C
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
5.3
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
4.3
IDM
Pulsed Drain Current
21
PD @TA = 25°C
Maximum Power Dissipation
1.3
PD @TA = 70°C
Maximum Power Dissipation
0.8
Linear Derating Factor
0.01
VGS
Gate-to-Source Voltage
± 20
W/°C
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
A
W
Thermal Resistance
Symbol
Parameter
e
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient (t<10s)
f
Typ.
Max.
–––
100
–––
99
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through „ are on page 10
www.irf.com
1
04/08/10
IRLML0030TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
IGSS
Min. Typ. Max. Units
30
–––
–––
–––
0.02
–––
–––
33
40
–––
22
27
1.3
1.7
2.3
–––
–––
1
–––
–––
150
Gate-to-Source Forward Leakage
–––
–––
100
Drain-to-Source Leakage Current
V
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ
V
µA
nA
d
= 5.2A d
VGS = 4.5V, ID = 4.2A
VGS = 10V, ID
VDS = VGS, ID = 25µA
VDS =24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Internal Gate Resistance
–––
2.3
–––
Ω
VGS = -20V
gfs
Qg
Forward Transconductance
9.5
–––
–––
S
Total Gate Charge
–––
2.6
–––
Qgs
Gate-to-Source Charge
–––
0.8
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
1.1
–––
td(on)
Turn-On Delay Time
–––
5.2
–––
VDD
tr
Rise Time
–––
4.4
–––
ID = 1.0A
td(off)
Turn-Off Delay Time
–––
7.4
–––
tf
Fall Time
–––
4.4
–––
Ciss
Input Capacitance
–––
382
–––
Coss
Output Capacitance
–––
84
–––
Crss
Reverse Transfer Capacitance
–––
39
–––
VDS = 10V, ID = 5.2A
ID = 5.2A
nC
VDS =15V
d
d
=15V
VGS = 4.5V
ns
RG = 6.8Ω
VGS = 4.5V
VGS = 0V
pF
VDS = 15V
ƒ = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
c
Min. Typ. Max. Units
–––
–––
1.6
A
–––
21
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
11
17
ns
Qrr
Reverse Recovery Charge
–––
4.0
6.0
nC
2
Conditions
MOSFET symbol
showing the
integral reverse
D
G
S
p-n junction diode.
TJ = 25°C, IS = 1.6A, VGS = 0V
d
TJ = 25°C, VR = 15V, IF=1.6A
di/dt = 100A/µs
d
www.irf.com
IRLML0030TRPbF
100
100
10
BOTTOM
VGS
10.0V
8.00V
4.50V
3.50V
3.25V
3.00V
2.50V
2.25V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1
0.1
2.25V
0.1
1
10
BOTTOM
1
2.25V
≤60µs PULSE WIDTH
Tj = 150°C
≤60µs PULSE WIDTH Tj = 25°C
0.01
10
0.1
100
0.1
V DS, Drain-to-Source Voltage (V)
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
VGS
10.0V
8.00V
4.50V
3.50V
3.25V
3.00V
2.50V
2.25V
VDS = 15V
≤60µs PULSE WIDTH
10
T J = 150°C
1
T J = 25°C
0.1
ID = 5.2A
VGS = 10V
1.5
1.0
0.5
1.5
2.0
2.5
3.0
3.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
4.0
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLML0030TRPbF
10000
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 5.2A
C, Capacitance (pF)
C oss = C ds + C gd
1000
Ciss
Coss
100
Crss
12.0
VDS= 24V
VDS= 15V
10.0
8.0
6.0
4.0
2.0
0.0
10
1
10
0
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
4
5
6
7
10
T J = 25°C
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1
1msec
10msec
0.1
T A = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.01
0.1
0.3
0.5
0.7
0.9
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
3
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1
2
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
T J = 150°C
1
1.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRLML0030TRPbF
6
RD
V DS
ID, Drain Current (A)
5
VGS
D.U.T.
RG
+
- VDD
4
VGS
3
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2
Fig 10a. Switching Time Test Circuit
1
VDS
90%
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response ( Z thJA ) °C/W
1000
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
1
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
140
130
ID = 5.2A
120
110
100
90
80
70
60
T J = 125°C
50
40
30
T J = 25°C
20
2
4
6
8
VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate
Voltage
10
RDS(on), Drain-to -Source On Resistance ( mΩ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRLML0030TRPbF
50
45
40
Vgs = 4.5V
35
30
Vgs = 10V
25
20
0
10
20
30
40
50
ID, Drain Current (A)
Fig 13. Typical On-Resistance Vs. Drain
Current
Current Regulator
Same Type as D.U.T.
QG
VGS
QGS
50KΩ
12V
.2µF
.3µF
QGD
D.U.T.
+
V
- DS
VGS
VG
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
6
Fig 14b. Gate Charge Test Circuit
www.irf.com
IRLML0030TRPbF
100
80
2.0
Power (W)
VGS(th), Gate threshold Voltage (V)
2.5
1.5
1.0
ID = 25uA
ID = 250uA
60
40
20
0.5
0.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
www.irf.com
0
1E-005 0.0001 0.001
0.01
0.1
1
10
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRLML0030TRPbF
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
A
6
5
SYMBOL
D
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
L2
A
A2
3
6
C
E
E1
1
2
0.15 [0.006] M C B A
0.10 [0.004] C
A1
5
B
3X b
e
0.20 [0.008] M C B A
NOTES:
e1
H 4
L1
Recommended Footprint
c
L2
0.972
0.950
0.802
3X L
7
1.900
MILLIMETERS
INCHES
MIN
MAX
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
MAX
0.0004 %6&
%6&
REF
BSC
0
8
2.742
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
Micro3 (SOT-23/TO-236AB) Part Marking Information
1RWHV7KLVSDUWPDUNLQJLQIRUPDWLRQDSSOLHVWRGHYLFHVSURGXFHGDIWHU
'$7(&2'(
3$57180%(5
: ,)35(&('('%</$67',*,72)&$/(1'$5<($5
/($')5((
&X:,5(
/27&2'(
+$/2*(1)5((
; 3$57180%(5&2'(5()(5(1&(
$ ,5/0/
% ,5/0/
& ,5/0/
' ,5/0/
( ,5/0/
) ,5/0/
* ,5/0/
+ ,5/0/
, ,5/0/
- ,5/0/
. ,5/0/
/ ,5/0/
0 ,5/0/
1 ,5/0/
3 ,5/0/
5 ,5/0/
<($5
<
:25.
:((.
:
$
%
&
'
;
<
=
: ,)35(&('('%<$/(77(5
<($5
<
$
%
&
'
(
)
*
+
.
:25.
:((.
:
$
%
&
'
;
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
www.irf.com
IRLML0030TRPbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
4.1 ( .161 )
3.9 ( .154 )
TR
FEED DIRECTION
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
4.1 ( .161 )
3.9 ( .154 )
1.32 ( .051 )
1.12 ( .045 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
www.irf.com
9
IRLML0030TRPbF
Orderable part number
Package Type
IRLML0030TRPbF
Micro3
Note
Standard Pack
Form
Quantity
Tape and Reel
3000
Qualification information†
Qualification level
Moisture Sensitivity Level
Cons umer
(per JE DE C JE S D47F
Micro3
RoHS compliant
††
†††
guidelines )
MS L1
†††
(per IPC/JE DE C J-S T D-020D
Yes
)
†
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
††
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ƒ Surface mounted on 1 in square Cu board
„ Refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/2010
10
www.irf.com