PD - 97535A IRLML6244TRPbF VDS 20 V VGS Max ±12 V RDS(on) max 21.0 m 27.0 m (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) HEXFET® Power MOSFET * ' 6 Micro3TM (SOT-23) IRLML6244TRPbF Application(s) Load/ System Switch Features and Benefits Features Benefits Low RDS(on) ( < 21m) Industry-standard SOT-23 Package RoHS compliant containing no lead, no bromide and no halogen Lower conduction losses results in Multi-vendor compatibility Environmentally friendly Absolute Maximum Ratings Symbol VDS Parameter Max. Units 20 V ID @ TA = 25°C Drain-Source Voltage Continuous Drain Current, VGS @ 10V 6.3 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.1 IDM Pulsed Drain Current 32 PD @TA = 25°C Maximum Power Dissipation 1.3 PD @TA = 70°C Maximum Power Dissipation 0.80 A W Linear Derating Factor 0.01 VGS Gate-to-Source Voltage ± 12 W/°C V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Parameter e RJA Junction-to-Ambient RJA Junction-to-Ambient (t<10s) f Typ. Max. ––– 100 ––– 99 Units °C/W ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 10 www.irf.com 1 03/09/12 IRLML6244TRPbF Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage Min. Typ. Max. Units 20 ––– ––– ––– 7.8 ––– ––– 16.0 21.0 ––– 22.0 27.0 V Conditions VGS = 0V, ID = 250μA mV/°C Reference to 25°C, ID = 1mA m 0.5 0.9 1.1 ––– ––– 1.0 ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 1.7 ––– gfs Qg Forward Transconductance 17 ––– ––– S Total Gate Charge ––– 8.9 ––– Qgs Gate-to-Source Charge ––– 0.68 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 4.4 ––– VGS = 4.5V td(on) Turn-On Delay Time ––– 4.9 ––– VDD =10V tr Rise Time ––– 7.5 ––– td(off) Turn-Off Delay Time ––– 19 ––– tf Fall Time ––– 12 ––– Ciss Input Capacitance ––– 700 ––– Coss Output Capacitance ––– 140 ––– Crss Reverse Transfer Capacitance ––– 98 ––– IDSS IGSS Drain-to-Source Leakage Current V VGS = 4.5V, ID = 6.3A VGS = 2.5V, ID = 5.1A μA nA d d VDS = VGS, ID = 10μA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 12V VGS = -12V VDS = 10V, ID = 6.3A ID = 6.3A nC ns VDS =10V d d ID = 1.0A RG = 6.8 VGS = 4.5V VGS = 0V pF VDS = 16V ƒ = 1.0MHz Source - Drain Ratings and Characteristics Symbol Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current c Min. Typ. Max. Units ––– ––– 1.3 A ––– 32 VSD (Body Diode) Diode Forward Voltage ––– ––– ––– 1.2 V trr Reverse Recovery Time ––– 12 18 ns Qrr Reverse Recovery Charge ––– 5.1 7.7 nC 2 Conditions MOSFET symbol showing the integral reverse D G S p-n junction diode. TJ = 25°C, IS = 6.3A, VGS = 0V d TJ = 25°C, VR = 15V, IF=1.3A di/dt = 100A/μs d www.irf.com IRLML6244TRPbF 100 ID, Drain-to-Source Current (A) TOP 10 BOTTOM VGS 10V 4.5V 3.0V 2.5V 2.3V 2.0V 1.8V 1.5V 1 1.5V TOP ID, Drain-to-Source Current (A) 100 10 BOTTOM 1.5V 1 60μs PULSE WIDTH 60μs PULSE WIDTH Tj = 25°C Tj = 150°C 0.1 0.1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) VGS 10V 4.5V 3.0V 2.5V 2.3V 2.0V 1.8V 1.5V 10 T J = 25°C T J = 150°C 1 VDS = 15V 60μs PULSE WIDTH 0.1 ID = 6.3A 1.4 VGS = 4.5V 1.2 1.0 0.8 0.6 0.5 1.0 1.5 2.0 2.5 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRLML6244TRPbF 10000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 6.3A C, Capacitance (pF) C oss = C ds + C gd 1000 Ciss Coss Crss 100 12.0 VDS= 16V VDS= 10V 10.0 VDS= 4.0V 8.0 6.0 4.0 2.0 0.0 10 1 10 0 100 5 Fig 5. Typical Capacitance vs. Drain-to-Source Voltage ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 T J = 150°C T J = 25°C 25 OPERATION IN THIS AREA LIMITED BY R DS(on) 100μsec 10 1msec 10msec 1 T A = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 100 1 15 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 10 10 1.2 0.01 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLML6244TRPbF 7 RD V DS ID, Drain Current (A) 6 VGS D.U.T. RG 5 4 + - VDD VGS Pulse Width µs Duty Factor 3 2 Fig 10a. Switching Time Test Circuit 1 VDS 90% 0 25 50 75 100 125 150 T A , Ambient Temperature (°C) 10% VGS Fig 9. Maximum Drain Current vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response ( Z thJA ) °C/W 1000 100 10 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 RDS(on), Drain-to -Source On Resistance (m ) 50 ID = 6.3A 40 30 T J = 125°C 20 T J = 25°C 10 1 2 3 4 5 6 7 8 9 10 11 12 RDS(on), Drain-to -Source On Resistance ( m) IRLML6244TRPbF 80 60 Vgs = 2.5V 40 Vgs = 4.5V 20 0 0 10 VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance vs. Gate Voltage 20 30 40 50 60 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current Current Regulator Same Type as D.U.T. QG VGS QGS 50K 12V .2F .3F QGD D.U.T. + V - DS VGS VG 3mA Charge IG ID Current Sampling Resistors Fig 14a. Basic Gate Charge Waveform 6 Fig 14b. Gate Charge Test Circuit www.irf.com IRLML6244TRPbF 1000 1.2 800 Single Pulse Power (W) VGS(th) , Gate threshold Voltage (V) 1.4 1.0 0.8 0.6 ID = 10μA ID = 250μA 0.4 600 400 200 0.2 0.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 15. Typical Threshold Voltage vs. Junction Temperature www.irf.com 0 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 Time (sec) Fig 16. Typical Power vs. Time 7 IRLML6244TRPbF Micro3 (SOT-23) Package Outline Dimensions are shown in millimeters (inches) DIMENSIONS A 6 5 SYMBOL D A A1 A2 b c D E E1 e e1 L L1 L2 A A2 3 6 C E E1 1 2 0.15 [0.006] M C B A 0.10 [0.004] C A1 5 B 3X b e 0.20 [0.008] M C B A NOTES: e1 H 4 L1 Recommended Footprint c L2 0.972 0.950 0.802 3X L 7 1.900 MILLIMETERS INCHES MIN MAX MIN 0.89 0.01 0.88 0.30 0.08 2.80 2.10 1.20 0.95 1.90 0.40 0.54 0.25 0 1.12 0.10 1.02 0.50 0.20 3.04 2.64 1.40 BSC BSC 0.60 REF BSC 8 MAX 0.0004 %6& %6& REF BSC 0 8 2.742 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. Micro3 (SOT-23/TO-236AB) Part Marking Information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ote: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com IRLML6244TRPbF Micro3(SOT-23)Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) 1.6 ( .062 ) 1.5 ( .060 ) 4.1 ( .161 ) 3.9 ( .154 ) TR FEED DIRECTION 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.32 ( .051 ) 1.12 ( .045 ) 8.3 ( .326 ) 7.9 ( .312 ) 0.35 ( .013 ) 0.25 ( .010 ) 1.1 ( .043 ) 0.9 ( .036 ) 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 9 IRLML6244TRPbF Orderable part number Package Type IRLML6244TRPbF Micro3 (SOT-23) Standard Pack Form Quantity Tape and Reel 3000 Note Qualification information† Qualification level Moisture Sensitivity Level Cons umer (per JE DE C JE S D47F Micro3 (SOT-23) RoHS compliant †† ††† guidelines ) MS L1 ††† (per IPC/JE DE C J-S T D-020D Yes ) Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400μs; duty cycle 2%. Surface mounted on 1 in square Cu board. Refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 101 N. SEpulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/12 10 www.irf.com