MICROWAVE POWER GaAs FET TIM5867-15UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-47 dBc at Pout= 31.0dBm Single Carrier Level HIGH POWER P1dB=42.0dBm at 5.85GHz to 6.75GHz HIGH GAIN G1dB=9.0dB(min.) at 5.85GHz to 6.75GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL P1dB CONDITIONS UNIT dBm MIN. 41.0 G1dB VDS= 10V IDSset=3.2A f= 5.85 to 6.75GHz dB 9.0 10.0 ⎯ A ⎯ 3.5 4.0 ηadd IM3 Two-Tone Test Po=31.0dBm ⎯ ⎯ -42 ⎯ 41 -47 ±0.8 Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current dB % dBc IDS2 (Single Carrier Level) A ⎯ 3.5 4.0 Channel Temperature Rise ΔTch (VDS X IDS + Pin – P1dB) °C ⎯ ⎯ 80 UNIT S MIN. MAX. ⎯ TYP. 4.0 V -0.5 -2.0 -3.0 A ⎯ 8.0 ⎯ V -5 ⎯ ⎯ °C/W ⎯ 2.0 2.4 IDS1 ΔG X Rth(c-c) TYP. MAX. 42.0 ⎯ ⎯ ⎯ Recommended Gate Resistance(Rg): 100 Ω (Max.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITIONS VDS= 3V IDS= 5A VDS= 3V IDS= 40mA VDS= 3V VGS= 0V IGS= -120μA Rth(c-c) Channel to Case Pinch-off Voltage SYMBOL ( Ta= 25°C ) gm VGSoff ⎯ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. February, 2010 TIM5867-15UL ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 12.0 Total Power Dissipation (Tc= 25 °C) PT W 62.5 Channel Temperature Tch °C 175 Storage Temperature Tstg °C -65 to +175 PACKAGE OUTLINE (2-16G1B) Unit in mm c Gate d Source e Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2