MICROWAVE POWER GaAs FET TIM1112-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 11.7GHz to 12.7GHz HIGH GAIN G1dB=9.5dB at 11.7GHz to 12.7GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current SYMBOL P1dB CONDITIONS UNIT dBm MIN. 35.5 G1dB VDS= 10V IDSset≅1.0A f= 11.7 to 12.7GHz dB 8.5 9.5 ⎯ A dB % dBc ⎯ ⎯ ⎯ -42 1.1 ⎯ 36 -45 1.6 ±0.8 Channel Temperature Rise IDS1 ΔG ηadd TYP. MAX. 36.5 ⎯ ⎯ ⎯ IM3 Two-Tone Test Po=24.0 dBm IDS2 (Single Carrier Level) A ⎯ 1.1 1.6 ΔTch (VDS x IDS + Pin – P1dB) °C ⎯ ⎯ 60 UNIT mS MIN. MAX. ⎯ TYP. 1200 V -0.5 -2.0 -4.5 A ⎯ 2.2 ⎯ V -5 ⎯ ⎯ °C/W ⎯ 3.8 4.4 x Rth(c-c) Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITIONS VDS= 3V IDS= 1.2A VDS= 3V IDS= 40mA VDS= 3V VGS= 0V IGS= -40μA Rth(c-c) Channel to Case Pinch-off Voltage SYMBOL ( Ta= 25°C ) gm VGSoff ⎯ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. May 2011 TIM1112-4UL ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 3.3 Total Power Dissipation (Tc= 25 °C) PT W 34.1 Channel Temperature Tch °C 175 Storage Temperature Tstg °C -65 to +175 PACKAGE OUTLINE (2-9D1B) Unit in mm c Gate d Source e Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2