MICROWAVE POWER GaAs FET TPM2323-60 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=48.0dBm at 2.4GHz HIGH GAIN G1dB=10.0dB at 2.4GHz PARTIALLY MATCHED TYPE HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain SYMBOL ( Ta= 25°C ) CONDITIONS P1dB UNIT MIN. TYP. MAX. dBm 47.0 48.0 ⎯ Compression Point G1dB VDS= 12V dB 9.0 10.0 ⎯ Drain Current IDS1 f = 2.4GHz IDSset≅8.0A A ⎯ 12.0 15.0 Power Added Efficiency ηadd % ⎯ 39 ⎯ Channel Temperature Rise ΔTch °C ⎯ ⎯ 100 CONDITIONS VDS= 3V IDS= 12.0A VDS= 3V IDS= 300mA VDS= 3V VGS= 0V IGS= -10.0mA UNIT S MIN. MAX. ⎯ TYP. 20.0 V -1.0 -1.8 -3.0 A ⎯ 38 ⎯ V -5 ⎯ ⎯ Channel to Case °C/W ⎯ 0.6 0.8 Power Gain at 1dB Gain Compression Point (VDS X IDS + Pin – P1dB) X Rth(c-c) Recommended gate resistance (Rg) : Rg = 30 Ω (Max.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage VGSO Thermal Resistance Rth(c-c) ( Ta= 25°C ) ⎯ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. May 2007 TPM2323-60 ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 26.0 Total Power Dissipation (Tc= 25 °C ) PT W 187.5 Channel Temperature Tch °C 175 Storage Tstg °C -65 ∼ +175 PACKAGE OUTLINE (2-16G1B) Unit in mm c Gate d Source e Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2 TPM2323-60 RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=12V IDS≅12.0A Pout(dBm) Pin=38.0dBm 48 47 46 45 44 2.1 2.2 2.3 2.4 2.5 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) freq.=2.4GHz 50 VDS=12V IDS≅12A 48 70 Pout 60 44 50 42 40 ηadd 40 30 38 20 36 10 34 0 24 28 32 36 Pin(dBm) 3 40 44 ηadd(%) Pout(dBm) 46 TPM2323-60 Power Dissipation(PT) vs. Case Temperature(Tc) PT(W) 200 150 100 50 0 0 40 80 120 160 Tc( °C ) DRAWING OF RECOMMENDABLE MATCHING NETWORK 4 200