TOSHIBA SSM3K124TU

SSM3K124TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K124TU
High Speed Switching Applications
Unit: mm
Ron = 120 mΩ (max) (@VGS = 4V)
Ron = 83 mΩ (max) (@VGS = 10V)
2.1±0.1
Characteristic
Drain–source voltage
Symbol
Rating
Unit
VDS
30
V
V
VGSS
± 20
DC
ID
2.4
Pulse
IDP
4.8
PD (Note 1)
800
PD (Note 2)
500
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Gate–source voltage
Drain current
Drain power dissipation
A
mW
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on a ceramic board.
2
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm )
Note 2: Mounted on an FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
+0.1
0.3 -0.05
1
3
2
0.166±0.05
Absolute Maximum Ratings (Ta = 25°C)
0.65±0.05
1.7±0.1
0.7±0.05
4 V drive
Low ON-resistance:
2.0±0.1
•
•
1: Gate
2: Source
3: Drain
Note:
UFM
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain–source breakdown voltage
Symbol
V (BR) DSS
Test Condition
Min
Typ.
Max
Unit
ID = 1 mA, VGS = 0
30
⎯
⎯
V
Drain cutoff current
IDSS
VDS = 30 V, VGS = 0
⎯
⎯
1
μA
Gate leakage current
IGSS
VGS = ± 20 V, VDS = 0
⎯
⎯
±1
μA
Vth
VDS = 5 V, ID = 1 mA
1.1
⎯
2.6
V
Forward transfer admittance
⏐Yfs⏐
VDS = 5 V, ID = 1.5 A
(Note3)
2.5
4.9
⎯
S
Drain–source ON-resistance
RDS (ON)
ID = 1.5 A, VGS = 10 V
(Note3)
⎯
64
83
ID = 1.0 A, VGS = 4 V
(Note3)
⎯
88
120
Gate threshold voltage
mΩ
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
180
⎯
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
100
⎯
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
38
⎯
pF
Switching time
Turn-on time
ton
VDD = 10 V, ID = 1.5 A,
⎯
13
⎯
Turn-off time
toff
VGS = 0 to 4 V, RG = 10 Ω
⎯
14
⎯
⎯
– 0.9
– 1.25
Drain–source forward voltage
VDSF
ID = − 2.4 A, VGS = 0 V
(Note3)
ns
V
Note3: Pulse test
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2007-11-01
SSM3K124TU
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
4V
OUT
4 V
90%
IN
0V
RG
0
10 μs
VDD = 10 V
RG = 10 Ω
D.U. <
= 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
Marking
VDD
(c) VOUT
VDD
10%
VDS (ON)
10%
90%
tr
ton
tf
toff
Equivalent Circuit (top view)
3
3
KKE
1
2
1
2
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
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2007-11-01
SSM3K124TU
ID – VDS
ID – VGS
5
4V
6V
3.6V
1
ID
4
3
0.1
Drain current
Drain current
Common Source
VDS = 5 V
(A)
VGS = 3.3V
ID
(A)
10 V
10
2
Ta = 100 °C
25 °C
0.01
−25 °C
1
0.001
Common Source
Ta = 25°C
0
0
0.2
0.4
0.6
Drain–source voltage
0.0001
0
1
0.8
VDS
1.0
0.5
(V)
Gate–source voltage
2.5
3.0
VGS
3.5
4.0
(V)
RDS (ON) – ID
RDS (ON) – VGS
300
300
ID = 1.5 A
Common Source
Common Source
250
Drain–source ON-resistance
RDS (ON) (mΩ)
Drain–source ON-resistance
RDS (ON) (mΩ)
2.0
1.5
200
150
Ta =100 °C
25 °C
100
50
Ta = 25°C
250
200
150
VGS = 4.0Ｖ
100
50
10V
−25 °C
0
0
2
4
6
Gate–source voltage
8
VGS
0
10
0
1
2
(V)
Drain current
RDS (ON) – Ta
ID
5
(A)
2.0
Vth (V)
Common Source
400
Gate threshold voltage
Drain–source on-resistance
RDS (ON) (mΩ)
4
Vth – Ta
500
300
200
ID = 1.0A / VGS = 4.0 V
100
1.5 A / 10V
0
−50
3
1.5
1.0
0.5
Common source
VDS = 5 V
0
0
50
Ambient temperature
100
Ta
−50
150
(°C)
ID = 1 mA
0
50
Ambient temperature
3
100
Ta
150
(°C)
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SSM3K124TU
IDR – VDS
10
10
Common Source
(A)
Common Source
VDS = 5 V
1
1
0.3
0.1
0.01
Ta = 25°C
IDR
Ta = 25°C
3
1
0.1
Drain current
ID
IDR
G
S
0.1
Ta = 100 °C
0.01
25 °C
0.001
−25 °C
0.0001
0
10
D
VGS = 0 V
Drain reverse current
Forward transfer admittance
⎪Yfs⎪
(S)
|Yfs| – ID
–0.2
(A)
–0.4
–0.6
Drain–source voltage
–0.8
VDS
(V)
600
Common Source
VDD = 10 V
VGS = 0 to 4 V
Ta = 25°C
RG = 10 Ω
toff
(ns)
500
100
tf
t
300
C
Ciss
Switching time
(pF)
–1.2
t – ID
C – VDS
1000
Capacitance
–1.0
100
Coss
50
30
Common Source
Ta = 25°C
f = 1 MHz
VGS = 0 V
10
0.1
Crss
1
10
Drain–source voltage
10
tr
1
0.01
100
VDS
ton
0.1
1
Drain current
(V)
10
ID
(A)
t – ID
600
1000
800
Drain Power Dissipation
c
2
Ta
(25.4 x 25.4 x 1.6 mm
Cu Pad : 645 mm )
(25.4 x 25.4 x 0.8 mm
Cu Pad : 645 mm )
Transient thermal impedance
Rth (°C/W)
D–
b: Mounted on a ceramicPboard
PD
(mW)
a: Mounted on an FR4 board
2
b
600
a
400
10
a: Mounted on a ceramic board
200
0
–40
b
a
100
(25.4 x 25.4 x 0.8 mm
2
Cu Pad : 645 mm )
b: Mounted on an FR4 board
1
–20
0
20
40
60
80
Ambient temperature
100 120 140 160
Ta
0.001
2
(25.4 x 25.4 x 1.6 mm Cu Pad : 645 mm )
c: Mounted on an FR4 board
2
(25.4 x 25.4 x 1.6 mm Cu Pad : 0.36 mm x 3)
0.01
0.1
1
Pulse Width
(°C)
4
10
100
600
tw (s)
2007-11-01
SSM3K124TU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2007-11-01