SSM6K18TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ) SSM6K18TU High Current Switching Applications Unit: mm • Suitable for high-density mounting due to compact package • Low on resistance: Ron = 54 mΩ (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±12 V DC ID 4 Pulse IDP 8 PD (Note 1) 500 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current Drain power dissipation Note: A 1,2,5,6 : Drain 3 : Gate 4 : Source JEDEC ⎯ Using continuously under heavy loads (e.g. the application of JEITA ⎯ high temperature/current/voltage and the significant change in TOSHIBA ⎯ temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 7 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Marking 6 Equivalent Circuit (Top View) 5 4 6 5 4 3 1 2 3 KNA 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing and use containers and other objects that are made of anti-static materials. 1 2007-11-01 SSM6K18TU Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current Min Typ. Max Unit VGS = ±12 V, VDS = 0 ⎯ ⎯ ±1 μA V (BR) DSS ID = 1 mA, VGS = 0 20 ⎯ ⎯ V (BR) DSX ID = 1 mA, VGS = −12 V 12 ⎯ ⎯ IGSS Drain-Source breakdown voltage Drain cut-off current IDSS Gate threshold voltage Vth Forward transfer admittance ⏐Yfs⏐ Drain-Source ON resistance RDS (ON) Test Condition V VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA VDS = 3 V, ID = 0.1 mA 0.5 ⎯ 1.1 V S VDS = 3 V, ID = 2 A (Note2) 5.5 ⎯ ⎯ ID = 2 A, VGS = 4 V (Note2) ⎯ 34 40 ID = 2 A, VGS = 2.5 V (Note2) ⎯ 41 54 mΩ Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 1100 ⎯ pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 160 ⎯ pF Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 185 ⎯ pF Switching time Turn-on time ton VDD = 10 V, ID = 2 A, ⎯ 43 ⎯ Turn-off time toff VGS = 0~2.5 V, RG = 4.7 Ω ⎯ 50 ⎯ ns Note2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V OUT 2.5 V 90% IN 0V RG 0 10 μs VDD (c) VOUT VDD = 10 V RG = 4.7 Ω < 1% D.U. = VIN: tr, tf < 5 ns Common Source Ta = 25°C 10% VDD VDS (ON) 90% 10% tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. 2 2007-11-01 SSM6K18TU ID – VDS ID – VGS 2.5V 8 4V Common Source Ta = 25°C 1.8V 7 10000 Common Source VDS = 3 V 1000 (mA) (A) 6 1.5V Drain current ID Drain current ID 5 4 3 2 VGS=1.2V 100 Ta = 100°C 10 25°C 1 −25°C 0.1 1 0 0 0.5 1 1.5 Drain-Source voltage VDS 0.01 0 2 0.5 1 1.5 Gate-Source voltage (V) 2 VGS (V) RDS (ON) – VGS RDS (ON) – ID 200 100 ID = 2 A Common Source Ta = 25°C Common Source 80 Drain-Source on resistance RDS (ON) (mΩ) Drain-Source on resistance RDS (ON) (mΩ) 2.5 60 2.5V 40 4V 20 150 100 Ta = 100°C 25°C 50 −25°C 0 0 2 4 6 0 0 8 2 Drain current ID (A) 4 6 8 Gate-Source voltage RDS (ON) – Ta VGS (V) 1.2 Common Source Common Source Vth (V) ID = 2A 80 60 Gate threshold voltage Drain-Source on resistance RDS (ON) (mΩ) 12 Vth – Ta 100 2.5 V 40 VGS = 4 V 20 0 −50 10 0 50 100 ID = 0.1 mA 0.8 0.6 0.4 0.2 0 −25 150 VDS = 3V 1.0 0 25 50 75 100 125 150 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 3 2007-11-01 SSM6K18TU |Yfs| – ID C – VDS 5000 30 3000 Ciss 1000 (pF) 3 1 Capacitance C Forward transfer admittance |Yfs| (S) 10 0.3 0.1 Common Source 300 50 Ta = 25°C 0.01 1 10 100 1000 Coss Crss 100 30 VDS = 3V 0.03 500 Common Source Ta = 25°C f = 1 MHz VGS = 0 V 10 0.1 10000 1 Drain current ID (mA) 10 Drain-Source voltage Dynamic Input Characteristic Switching Time Common Source VDD = 10 V VGS = 0∼2.5V Ta = 25°C RG = 4.7 Ω 9 8 Switching time t (ns) VGS (V) (V) 1000 10 Gate-Source voltage 100 VDS 7 VDD = 10V 6 VDD = 16 V 5 4 3 100 toff tf ton 10 tr 2 Common Source ID = 4 A Ta = 25°C 1 0 0 10 20 30 1 0.01 35 0.1 1 10 Drain current ID (A) Total gate charge Qg (nC) IDR – VDS 8 Drain reverse current IDR (A) Common Source VGS = 0 Ta = 25°C D 6 IDR G S 4 2 0 0 −0.2 −0.4 −0.6 Drain-Source voltage −0.8 VDS −1 −1.2 (V) 4 2007-11-01 SSM6K18TU Transient thermal impedance rth (°C/W ) rth – tw 1000 Single pulse Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) 100 10 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe Operating Area 10 PD – Ta ID max (pulse) * 1.2 3 1 ms* Mounted on FR4 board 10 ms* Power dissipation PD (A) 10s* Drain current ID 0.3 (W) 1 ID max (continuous) DC operation Ta = 25°C 0.1 Mounted on FR4 board 0.03 (25.4 mm × 25.4 mm × 1.6 t, 2 Cu Pad: 645 mm ) 1 (25.4 mm × 25.4 mm × 1.6 t 2 Cu pad: 645 mm ) t = 10 s 0.8 0.6 DC 0.4 0.2 0.01 0 0 * Single Pulse Ta = 25°C 0.003 50 100 150 Curves must be derated Ambient temperature Ta (°C) linearly with increase in temperature. 0.001 0.1 0.3 1 3 Drain-Source voltage 10 30 VDS (V) 100 5 2007-11-01 SSM6K18TU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01