SSM6K202FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K202FE ○ High-Speed Switching Applications ○ Power Management Switch Applications • • 1.8 V drive Low ON-resistance: Unit: mm Ron = 145 mΩ (max) (@VGS = 1.8V) Ron = 101 mΩ (max) (@VGS = 2.5V) Ron = 85 mΩ (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain–source voltage VDS 30 V Gate–source voltage VGSS ± 12 V DC ID 2.3 Pulse IDP 4.6 PD (Note 1) 500 Drain current Drain power dissipation A mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) 1, 2, 5, 6 : Drain Note: ES6 3 : Gate 4 : Source JEDEC ― JEITA ― 2-2N1A TOSHIBA Weight: 3 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Drain–source breakdown voltage Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 30 ⎯ ⎯ V V (BR) DSX ID = 1 mA, VGS = –12 V 18 ⎯ ⎯ V Drain cutoff current IDSS VDS = 30 V, VGS = 0 ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ± 12 V, VDS = 0 ⎯ ⎯ ±1 μA Vth VDS = 3 V, ID = 1 mA 0.4 ⎯ 1.0 V Forward transfer admittance ⏐Yfs⏐ VDS = 3 V, ID = 1.5 A (Note2) 3.9 7.8 ⎯ S ID = 1.5 A, VGS = 4.0 V (Note2) ⎯ 66 85 Drain–source ON-resistance RDS (ON) ID = 1.0 A, VGS = 2.5 V (Note2) ⎯ 78 101 ID = 0.5 A, VGS = 1.8 V (Note2) ⎯ 95 145 ⎯ 270 ⎯ pF Gate threshold voltage Input capacitance Ciss Output capacitance Reverse transfer capacitance Switching time Turn-on time Turn-off time Drain–source forward voltage VDS = 10 V, VGS = 0, f = 1 MHz mΩ Coss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 56 ⎯ pF Crss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 47 ⎯ pF ton VDD = 10 V, ID = 2 A, ⎯ 20 ⎯ toff VGS = 0 to 2.5 V, RG = 4.7 Ω ⎯ 31 ⎯ ⎯ – 0.85 – 1.2 VDSF ID = − 2.3 A, VGS = 0 V (Note2) ns V Note 2: Pulse test 1 2007-11-01 SSM6K202FE Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V OUT 2.5 V 0V RG 0 10 μs Marking 10% VDD (c) VOUT VDD VDD = 10 V RG = 4.7 Ω < 1% D.U. = VIN: tr, tf < 5 ns Common Source Ta = 25°C 6 90% IN VDS (ON) 10% 90% tr ton tf toff Equivalent Circuit (top view) 5 4 6 5 4 3 1 2 3 KL 1 2 Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2007-11-01 SSM6K202FE ID – VDS ID – VGS 5 10 4.0 V 2.5 V Common Source ID 1.8 V 1 3 0.1 Drain current Drain current VDS = 3 V (A) 4 ID (A) 10 V 2 VGS = 1.5 V Ta = 100 °C 0.01 1 25 °C − 25 °C 0.001 Common Source Ta = 25°C 0 0 0.2 0.4 0.8 0.6 Drain–source voltage VDS 0.0001 0 1 (V) 1.0 Gate–source voltage RDS (ON) – VGS ID = 0.5 A Common Source Common Source Ta = 25°C Drain–source ON-resistance RDS (ON) (mΩ) Drain–source ON-resistance RDS (ON) (mΩ) (V) 200 Ta = 25°C 150 100 Ta = 100 °C 25 °C 50 − 25 °C 0 2 6 4 Gate–source voltage 8 VGS 150 100 1.8 V 2.5 V 50 0 10 VGS = 4.0 V 0 1 (V) 3 2 Drain current RDS (ON) – Ta 4 ID 5 (A) Vth – Ta 1.0 300 Vth (V) Common Source 250 200 Gate threshold voltage Drain–source on-resistance RDS (ON) (mΩ) VGS RDS (ON) – ID 200 0 2.0 0.5 A / 1.8 V 150 1.0 A / 2.5 V 100 ID = 1.5 A / VGS = 4.0 V 50 0 −50 0 50 Ambient temperature 100 Ta 0.5 Common source VDS = 3 V ID = 1 mA 0 −50 150 (°C) 0 50 Ambient temperature 3 100 Ta 150 (°C) 2007-11-01 SSM6K202FE IDR – VDS |Yfs| – ID 10 10 VGS = 0 V (A) IDR 3 Drain reverse current Forward transfer admittance ⎪Yfs⎪ (S) Common Source 1 0.3 Common Source VDS = 3 V Ta = 25°C 0.1 0.01 1 0.1 Drain current ID S 0.1 Ta =100 °C −25 °C –0.8 –0.6 VDS (ns) Ciss Switching time 100 Common Source Ta = 25°C f = 1 MHz VGS = 0 V 10 0.1 Coss Crss 100 10 –1.0 (V) t – ID Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25°C RG = 4.7 Ω toff 300 30 –0.4 1000 tf t (pF) –0.2 Drain–source voltage C Capacitance 25 °C 0.01 500 50 IDR G (A) C – VDS 1000 Ta = 25°C 1 0.001 0 10 D ton tr 1 10 Drain–source voltage 1 0.01 100 VDS (V) 0.1 Drain current 1 ID 10 (A) PD – Ta Mounted on an FR4 board 2 (25.4 x 25.4 x 1.6 mm Cu Pad : 645 mm ) PD – Ta 800 Drain Power Dissipation PD (mW) 1000 600 400 200 0 –40 –20 0 20 40 60 80 Ambient temperature 100 120 140 160 Ta (°C) 4 2007-11-01 SSM6K202FE 5 2007-11-01 SSM6K202FE RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01