SSM3K309T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K309T ○ Power Management Switch Applications ○ High-Current Switching Applications Unit: mm • 1.8V drive • Low on-resistance : Ron = 47mΩ (max.) (@VGS = 1.8V) : Ron = 35mΩ (max.) (@VGS = 2.5V) : Ron = 31mΩ (max.) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage VDS 20 V Gate–source voltage VGSS ±12 V DC ID 4.7 Pulse IDP 9.4 PD (Note 1) 700 mW Drain current Drain power dissipation A Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2) JEDEC ― JEITA ― TOSHIBA Weight: 2-3S1A 10mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Drain–source breakdown voltage Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 20 ⎯ ⎯ V (BR) DSX ID = 1 mA, VGS = -12 V 12 ⎯ ⎯ VDS =20 V, VGS = 0 ⎯ ⎯ 1 μA Drain cutoff current IDSS Gate leakage current V IGSS VGS = ±12 V, VDS = 0 ⎯ ⎯ ±1 μA Gate threshold voltage Vth VDS = 3 V, ID = 1 mA 0.35 ⎯ 1.0 V Forward transfer admittance |Yfs| VDS = 3 V, ID = 4.0A 13 25 ⎯ S (Note2) ⎯ 22 31 (Note2) ⎯ 25 35 ⎯ 30 47 ID = 4.0 A, VGS = 4.0 V Drain–source ON-resistance RDS (ON) ID = 3.0 A, VGS = 2.5 V ID = 1.0 A, VGS = 1.8 V (Note2) (Note2) mΩ Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 1020 ⎯ pF Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 175 ⎯ pF Crss pF VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 160 ⎯ Turn-on time ton VDD = 10 V, ID = 2A ⎯ 23 ⎯ Turn-off time toff VGS = 0~2.5 V, RG = 4.7 Ω ⎯ 34 ⎯ ⎯ -0.85 -1.2 Reverse transfer capacitance Switching time Drain–source forward voltage VDSF ID = -4.7 A, VGS = 0 (Note2) ns V Note2: Pulse test 1 2007-11-01 SSM3K309T Switching Time Test Circuit (b) VIN (a) Test Circuit 2.5 V 90% 2.5 V OUT IN RG 0 10 μs VDD VDD = 10 V RG = 4.7 Ω < 1% D.U. = VIN: tr, tf < 5 ns Common source Ta = 25°C 0V 10% VDD 90% (c) VOUT 10% VDS (ON) tr ton Marking tf toff Equivalent Circuit (top view) 3 3 KDM 1 2 1 2 Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2007-11-01 SSM3K309T ID – VDS 10 ID – VGS 10 4.0 V 2.5 V 1.8 V 1.5 V ID 6 4 VGS = 1.2 V 2 0 Common Source Ta = 25 °C 0 0.4 0.2 0.6 0.8 Drain - Source voltage VDS 0.1 Ta = 100 °C Drain current ID Drain current 1 (A) (A) 8 Common Source VDS = 3 V 0.01 25 °C 0.001 − 25 °C 0.0001 0 1.0 (V) 1.0 RDS (ON) – VGS 100 Common Source Ta = 25°C Common Source Drain – Source on-resistance RDS (ON) (mΩ) Drain – Source on-resistance RDS (ON) (mΩ) ID =4.0A 50 25 °C Ta = 100 °C − 25 °C 0 2 6 4 Gate - Source voltage 8 2.5 V VGS = 4.0 V 0 2 6 4 Drain current ID 8 10 (A) Vth – Ta 1.0 Gate threshold voltage Vth (V) Common Source 1.0 A / 1.8 V 3.0 A / 2.5 V ID = 4.0 A / VGS = 4.0 V 0 −50 1.8 V VGS (V) RDS (ON) – Ta 50 50 0 10 100 Drain – Source on-resistance RDS (ON) (mΩ) VGS (V) RDS (ON) – ID 100 0 2.0 Gate - Source voltage Common Source VDS = 3 V ID = 1 mA 0.8 0.6 0.4 0.2 0 0 50 Ambient temperature 100 Ta −50 150 (°C) 0 50 Ambient temperature 3 100 Ta 150 (°C) 2007-11-01 SSM3K309T IDR – VDS (S) ⎪Yfs⎪ |Yfs| – ID 30 10 VDS = 3 V 10 IDR Ta = 25 °C Drain reverse current Forward transfer admittance 3 1 0.3 0.1 0.03 Common Source VGS = 0 V (A) Common Source D IDR Ta = 25 °C 1 G S 0.1 0.01 100 °C 0.001 25 °C −25 °C 0.01 0.001 0.1 0.01 1 Drain current ID 0.0001 0 10 -0.8 -0.6 -1.0 VDS -1.2 (V) t – ID 1000 Common Source VDD = 10 V VGS = 0 ∼ 2.5 V Ta = 25 °C RG = 4.7 Ω toff 3000 (ns) Ciss (pF) -0.4 Drain-Source voltag C – VDS 5000 -0.2 (A) 1000 tf Capacitance 300 Switching time C t 100 Coss 100 Crss Common Source ton 10 tr Ta = 25 °C f = 1 MHz VGS = 0 V 30 10 0.1 1 10 Drain – Source voltage 1 0.01 100 VDS 0.1 Drain current (V) rth – tw Drain power dissipation PD (mW) Transient thermal impedance Rth (°C/W) b 100 a Single Pulse a: Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm2) b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , Cu Pad : 0.8 mm2×3) 1 0.001 0.01 0.1 1 Pulse width ID 10 (A) PD – Ta 1000 10 1 10 tw 100 1000 800 a 600 400 (s) b 200 0 -40 1000 a: Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm2) b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , Cu Pad : 0.8 mm2×3) -20 0 20 40 60 80 Ambient temperature 4 100 120 140 160 Ta (°C) 2007-11-01 SSM3K309T RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01