TOSHIBA SSM6J23FE

SSM6J23FE
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type (U-MOSⅢ)
SSM6J23FE
High Current Switching Applications
DC-DC Converter
Unit: mm
•
Suitable for high-density mounting due to compact package
•
Low on-resistance:
Ron = 160 mΩ (max) (@VGS = -4.0 V)
Ron = 210 mΩ (max) (@VGS = -2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
-12
V
Gate-Source voltage
VGSS
±8
V
DC
ID
-1.2
Pulse
IDP
-4.8
PD
(Note 1)
500
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain current
Drain power dissipation
Note:
1,2,5,6 : Drain
3
: Gate
4
: Source
A
JEDEC
-
JEITA
-
TOSHIBA
2-2N1A
Using continuously under heavy loads (e.g. the application of
Weight: 3 mg (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Marking
6
Equivalent Circuit
5
4
6
5
4
3
1
2
3
KE
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic discharge. Operators should wear anti-static clothing and use containers and
other objects that are made of anti-static materials.
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SSM6J23FE
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Min
Typ.
Max
Unit
μA
IGSS
VGS = ±8 V, VDS = 0
−
−
±1
V (BR) DSS
ID = -1 mA, VGS = 0
-12
−
−
V (BR) DSX
ID = -1 mA, VGS = +8 V
-4
−
−
IDSS
Gate threshold voltage
Test Condition
Vth
Forward transfer admittance
⏐Yfs⏐
Drain-Source on-resistance
RDS (ON)
VDS = -12 V, VGS = 0
VDS = -3 V, ID =-0.1 mA
V
−
−
-1
μA
-0.5
−
-1.1
V
S
VDS = -3 V, ID = -0.6A
(Note2)
1.75
3.5
−
ID = -0.6 A, VGS = -4 V
(Note2)
−
110
160
ID = -0.6 A, VGS = -2.5 V
(Note2)
−
145
210
mΩ
Input capacitance
Ciss
VDS = -10 V, VGS = 0, f = 1 MHz
−
420
−
pF
Reverse transfer capacitance
Crss
VDS = -10 V, VGS = 0, f = 1 MHz
−
75
−
pF
Output capacitance
Coss
VDS = -10 V, VGS = 0, f = 1 MHz
−
93
−
pF
Switching time
Turn-on time
ton
VDD = −10 V, ID = −0.6A
−
23
−
Turn-off time
toff
VGS = 0~−2.5 V, RG = 4.7 Ω
−
30
−
ns
Note2: Pulse test
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
ID
0
out
10%
90%
−2.5 V
in
−2.5 V
0V
VDS (ON)
90%
RG
10 μs
VDD
(c) VOUT
VDD = -10 V
RG = 4.7 Ω
< 1%
D.U. =
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
VDD
10%
tr
ton
tf
toff
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 μA
for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires
a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on))
Please take this into consideration when using the device.
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SSM6J23FE
ID - V G S
ID - V D S
-4
- 10000
-4.0V
-3.5
Common Source
VDS =-3V
Common Source
Ta=25℃
-2.5V
-2.5
Drain current I D (mA)
Drain current I D (mA)
- 1000
-2.0V
-3
V GS =-1.8V
-2
-1.5
-1
- 100
25℃
Ta=85℃
- 10
-25℃
-1
- 0.1
-0.5
0
- 0.01
0
-0.5
-1
-1.5
-2
0
-0.5
-1
-1.5
-2
-2.5
Gate-Source voltage V GS (V)
Drain-Source voltage V DS (V)
R D S (O N) - ID
R D S (O N) - V G S
0.5
300
Common Source
ID=-0.6A
0.4
Drain-Source on-resistance
R DS(ON) (Ω)
Drain-Source on-resistance
R DS(ON) (mΩ)
Common Source
Ta=25℃
200
-2.5V
100
VGS =-4.0V
0.3
0.2
25℃
Ta=85℃
0.1
-25℃
0
0
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
0
-4
-2
Drain current I D (A)
-4
-6
V th - Ta
R D S (O N) - Ta
-2
300
Common Source
Common Source
-1.8
ID=-0.6A
ID=-0.1mA
200
Gate threshold voltage
Vth(V)
-1.6
Drain-Source on-resistance
R DS(ON) (Ω)
-8
Gate-Source Voltage V GS (V)
V GS =-2.5V
-4.0V
100
V DS =-3V
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
0
-25
0
25
50
75
100
125
-25
150
0
25
50
75
100
125
150
Ambient temperture Ta (℃)
Ambient temperture Ta (℃)
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SSM6J23FE
C - VDS
|Yfs| - I D
1000
Commonm Source
V DS =-3V
Ta=25℃
C iss
10
C oss
100
Capacitance C (pF)
Forward transfer admittance |Yfs| (mS)
100
1
C rss
10
Common Source
VGS =0V
f=1MHz
Ta=25℃
0.1
1
0.01
- 0.001
-
0.01
-
0.1
-1
-
- 10
0.1
-1
- 10
ID R - V D S
t - ID
-2
1000
Common Source
V GS =0
Ta=25℃
-1.5
Common Source
IDR
G
-1
V DD=-10V
toff
100
D
Switching time t (ns)
Drain reverse current I DR (A)
- 100
Drain-Source voltage V DS (V)
Drain Current I D (A)
S
-0.5
V GS =0～-2.5V
Ta=25℃
tf
ton
10
tr
1
0
0
0.2
0.4
0.6
0.8
0.1
- 0.01
1
-
0.1
Drain-Source voltage V DS (V)
-1
- 10
Drain curren I D (A)
S afe o p eratin g area
Dyn a mic In p u t Ch aracteristic
- 10
-10
1ms
-8
IDmax (Pulsed) *
-
ID=1.2A
Ta=25℃
Drain current I D (A)
Gate-Source voltage V GS (V)
Common Source
VDD=-10V
-6
-4
ID max
(Continuous)
- 0.1
1
2
3
4
5
6
7
8
9
- 0.001
- 0.1
10
DC operation
Ta=25℃
Mounted on FR4 board
(25.4 mm ・ 25.4 mm ・ 1.6 t , Cu pad: 645 mm2 )
- 0.01
0
100ms
1
-2
0
10ms
*:Single nonrepetive Pulse
Ta ・ 25°C
Curves must be derated linealy
with increase in temperture.
-1
- 10
- 100
Drain-Source current V DS (V)
Tatal gate charge Qg (nC)
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2007-11-01
SSM6J23FE
– tw (MOSFET)
Single pulse
Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
100
10
1
0.001
0.01
0.1
1
10
Pulse width
100
1000
tw (s)
P D - Ta
600
Mounted on FR4 board
(25.4 mm ・ 25.4 mm ・ 1.6 t,
Cu Pad: 645 mm2）
500
Drain power dissipation　P D (mW)
Transient thermal impedance
rth (°C/W )
rth
1000
400
300
200
100
0
0
20
40
60
80
100
120
140
160
Ambient temperature Ta (℃)
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SSM6J23FE
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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