TOSHIBA SSM3J115TU

SSM3J115TU
TOSHIBA Field-Effect Transistor
Silicon P-Channel MOS Type
SSM3J115TU
High-Speed Switching Applications
Power Management Switch Applications
Unit: mm
Ron = 353 mΩ (max) (@VGS = −1.5 V)
Ron = 193 mΩ (max) (@VGS = −1.8 V)
Ron = 125 mΩ (max) (@VGS = −2.5 V)
Ron = 98 mΩ (max) (@VGS = −4.0 V)
2.1±0.1
Drain-source voltage
Gate-source voltage
DC
Pulse
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
VDS
VGSS
ID
IDP
−20
±8
−2.2
−4.4
800
500
150
−55~150
V
V
PD (Note 1)
PD (Note 2)
Tch
Tstg
A
1
3
2
0.7±0.05
Characteristic
2.0±0.1
Absolute Maximum Ratings (Ta = 25°C)
+0.1
0.3 -0.05
1.7±0.1
0.166±0.05
1.5 V drive
Low ON-resistance:
0.65±0.05
•
•
mW
°C
°C
1: Gate
2: Source
UFM 3: Drain
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on a ceramic board.
2
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm )
Note 2: Mounted on an FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-source breakdown voltage
Symbol
Test Conditions
Min
Typ.
Max
V (BR) DSS
ID = −1 mA, VGS = 0
−20
⎯
⎯
V (BR) DSX
ID = −1 mA, VGS = +8 V
−12
⎯
⎯
Unit
V
Drain cutoff current
IDSS
VDS = −20 V, VGS = 0
⎯
⎯
−10
μA
Gate leakage current
IGSS
VGS = ±8 V, VDS = 0
⎯
⎯
±1
μA
−0.3
⎯
−1.0
V
⎯
S
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Vth
VDS = −3 V, ID = −1 mA
⏐Yfs⏐
VDS = −3 V, ID = − 0.9 A
(Note 3)
2.7
5.4
ID = −1.0 A, VGS = −4.0 V
(Note 3)
⎯
77
98
(Note 3)
⎯
⎯
⎯
84
111
126
125
193
353
⎯
568
⎯
pF
RDS (ON)
Ciss
ID = −1.0 A, VGS = −2.5 V
ID = −1.0 A, VGS = −1.8 V
ID = −0.1 A, VGS = −1.5 V
(Note 3)
(Note 3)
VDS = −10 V, VGS = 0, f = 1 MHz
mΩ
Output capacitance
Coss
VDS = −10 V, VGS = 0, f = 1 MHz
⎯
75
⎯
pF
Reverse transfer capacitance
Crss
VDS = −10 V, VGS = 0, f = 1 MHz
⎯
67
⎯
pF
VDD = −10 V, ID = −0.9 A,
VGS = 0~−2.5 V, RG = 4.7 Ω
⎯
29
⎯
⎯
39
⎯
⎯
0.8
1.2
Switching time
Turn-on time
ton
Turn-off time
toff
Drain-source forward voltage
VDSF
ID = 2.2 A, VGS = 0 V
(Note 3)
ns
V
Note 3: Pulse test
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SSM3J115TU
Switching Time Test Circuit
(a) Test circuit
0
(b) VIN
OUT
0V
10%
IN
RG
−2.5V
10 μs
(c) VOUT
VDD
VDD = -10 V
RG = 4.7 Ω
D.U. <
= 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
Marking
90%
−2.5 V
RL
VDS (ON)
90%
10%
VDD
tr
ton
tf
toff
Equivalent Circuit (top view)
3
3
JJ8
1
2
1
2
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = −1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
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SSM3J115TU
ID – VDS
-4
ID – VGS
-10000
-4V
Common Source
VDS = -3 V
-1.5V
-3.5
(mA)
-1.8V
-2
-1.5
VGS=-1.2V
-1
Ta = 85°C
-10
25°C
-1
−25°C
-0.1
-0.5
0
-100
ID
-2.5V
Drain current
(A)
-2.5
Drain current
ID
-1000
-3
Common Source
Ta = 25°C
0
-0.5
-1
-1.5
Drain –source voltage
VDS
-0.01
0
-2
-0.2
(V)
-0.4
-1.0
Gate–source voltage
RDS (ON) – VGS
400
-0.8
-0.6
VGS
-1.4
ID = -0.1 A
(V)
ID = -1.0 A
Drain–source ON-resistance
RDS (ON) (mΩ)
Common Source
300
200
25°C
Ta = 85°C
100
300
200
25°C
Ta = 85°C
100
−25°C
0
0
-4
-2
-6
Gate –source voltage
VGS
−25°C
0
-8
0
(V)
-2
RDS (ON) – ID
-6
VGS
-8
(V)
RDS (ON) – Ta
500
Common Source
400
Common Source
Ta = 25°C
Drain–source ON-resistance
RDS (ON) (mΩ)
Drain–source -resistance
RDS (ON) (mΩ)
-4
Gate –source voltage
450
350
300
250
-1.5V
200
-1.8V
150
100
-2.5V
50
0
-1.6
RDS (ON) – VGS
400
Common Source
Drain–source ON-resistance
RDS (ON) (mΩ)
-1.2
0
-1
-3
-2
Drain current
ID
400
-1A / -1.8 V
200
100
-1A / -2.5 V
0
−50
-4
(A)
ID =-0.1A / VGS = -1.5 V
300
0
50
Ambient temperature
3
100
Ta
150
(°C)
2007-11-01
SSM3J115TU
Vth (V)
Gate threshold voltage
Common Source
-0.7
-0.5
VDS = -3 V
ID = -1 mA
10
Forward transfer admittance
-0.6
(S)
|Yfs| – ID
30
⎪Yfs⎪
Vth – Ta
-0.8
-0.4
-0.3
-0.2
-0.1
0
−25
0
25
50
75
Ambient temperature
100
Ta
125
150
0.3
0.1
0.03
0.01
1
-100
-10
-1000
ID
-10000
(mA)
Dynamic Input Characteristic
(V)
VGS
Ciss
Gate-source voltage
(pF)
C
Capacitance
10
-0.1
1
-10
100
30
3
Drain current
300
50
Ta = 25°C
(°C)
3000
500
VDS = -3 V
C – VDS
5000
1000
Common Source
Coss
Common
Crss
Source
Ta = 25°C
f = 1 MHz
VGS = 0 V
-1
-10
Drain –source voltage
-8
-7
VDD = -16 V
-6
-5
-4
-3
-2
Common Source
ID = -1.2 A
Ta = 25°C
-1
0
-100
VDS
-9
0
5
10
15
Total gate charge
(V)
20
Qg
25
(nC)
t – ID
IDR – VDS
1000
-2
Switching time
ton
10
Common Source
VDD = -10 V
VGS = 0∼-2.5 V
Ta = 25°C
RG = 4.7 Ω
tr
1
0.01
Common Source
VGS = 0 V
(A)
IDR
tf
0.1
Drain current
1
ID
Drain reverse current
100
t
(ns)
toff
IDR
G
S
-1
-0.5
0
10
D
Ta = 25°C
-1.5
0
0.2
0.4
0.6
Drain– source voltage
(A)
4
0.8
VDS
1
1.2
(V)
2007-11-01
SSM3J115TU
b
800
1000
a: mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
b:mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
Transient thermal impedance Rth(°C/W)
Drain power dissipation PD(mW)
Rth - tw
PD - Ta
1000
600
a
400
200
0
0
20
c
5
Single pulse
a:Mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b:Mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
c:Mounted on FR4 Board
(25.4mm×25.4mm×1.6mm)
Cu Pad :0.45mm×0.8mm×3
10
1
0.001
40 60 80 100 120 140 160
Ambient temperature Ta(°C)
b
a
100
0.01
0.1
1
10
Pulse w idth tw (S)
100
1000
2007-11-01
SSM3J115TU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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