TOSHIBA SSM3J109TU

SSM3J109TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J109TU
○ Power Management Switch Applications
○ High-Speed Switching Applications
•
1.8 V drive
•
Low ON-resistance:
Unit: mm
2.1±0.1
Ron = 300 mΩ (max) (@VGS = -1.8 V)
Characteristic
Drain-source voltage
Gate-source voltage
DC
Pulse
Drain current
Drain power dissipation
Channel temperature
Storage temperature
Symbol
Rating
Unit
VDS
VGSS
ID
IDP
PD (Note 1)
-20
±8
-2
-4
V
V
800
PD (Note 2)
500
Tch
Tstg
150
−55~150
+0.1
0.3 -0.05
3
2
0.7±0.05
Absolute Maximum Ratings (Ta = 25˚C)
1
0.166±0.05
2.0±0.1
Ron = 130 mΩ (max) (@VGS = -4.0 V)
0.65±0.05
1.7±0.1
Ron = 172 mΩ (max) (@VGS = -2.5 V)
A
1. Gate
2. Source
3. Drain
mW
°C
°C
UFM
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Mounted on a ceramic board
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2)
Note 2: Mounted on an FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
JEDEC
―
JEITA
―
2-2U1A
TOSHIBA
Weight: 6.6 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-source breakdown voltage
Symbol
Test Condition
Min
Typ.
Max
V (BR) DSS
ID = -1 mA, VGS = 0
-20
⎯
⎯
V (BR) DSX
ID = -1 mA, VGS = +8 V
-12
⎯
⎯
Unit
V
Drain cutoff current
IDSS
VDS = -20 V, VGS = 0
⎯
⎯
-10
μA
Gate leakage current
IGSS
VGS = ±8 V, VDS = 0
⎯
⎯
±1
μA
-0.3
⎯
-1.0
V
S
Gate threshold voltage
Vth
Forward transfer admittance
⏐Yfs⏐
Drain-source ON-resistance
RDS (ON)
VDS = -3 V, ID = -1 mA
VDS = -3 V, ID = -1 A
(Note 3)
2.4
4
⎯
ID = -1.0 A, VGS = -4 V
(Note 3)
⎯
91
130
ID = -0.5 A, VGS = -2.5 V
ID = -0.2 A, VGS = -1.8 V
(Note 3)
(Note 3)
⎯
⎯
123
175
172
300
mΩ
Input capacitance
Ciss
VDS = -10 V, VGS = 0, f = 1 MHz
⎯
335
⎯
pF
Output capacitance
Coss
VDS = -10 V, VGS = 0, f = 1 MHz
⎯
70
⎯
pF
Reverse transfer capacitance
Crss
VDS = -10 V, VGS = 0, f = 1 MHz
⎯
56
⎯
pF
ton
VDD = -10 V, ID = -1A,
⎯
20
⎯
toff
VGS = 0 ~ -2.5 V, RG = 4.7 Ω
⎯
20
⎯
⎯
0.85
1.2
Switching time
Turn-on time
Turn-off time
Drain-source forward voltage
VDSF
ID = 2 A, VGS = 0
(Note 3)
ns
V
Note 3: Pulse test
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2007-11-01
SSM3J109TU
Switching Time Test Circuit
(a) Test circuit
(b) VIN
0V
10%
OUT
0
IN
90%
−2.5 V
RG
−2.5V
10 μs
RL
(c) VOUT
VDD
VDD = − 10 V
RG = 4.7 Ω
Duty ≦ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
Marking
VDS (ON)
90%
10%
VDD
tr
ton
tf
toff
Equivalent Circuit (top view)
3
3
JJ2
1
2
1
2
Notice on Usage
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
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SSM3J109TU
ID - VGS
ID - VDS
-5
-10
-4
Drain Current ID (A)
-4
Common Source
VDS = -3 V
Common Source
Ta = 25℃
-2.5
-3
-1
Drain Current ID (A)
-10
-1.8
-2
-0.1
25℃
-25℃
Ta = 85℃
-0.01
-1.5
-1
-0.001
VGS = -1.2 V
-0.0001
0
0
-0.2
-0.4
-0.6
-0.8
0
-1
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
-2
-2.2
-2.4
Gate-Source Voltage VGS (V)
Drain-Source Voltage VDS (V)
RDS (ON) - Ta
RDS (ON) - VGS
300
300
Common Source
Ta = 25℃
-0.5 A
Common Source
-1.8 V,-0.2 A
250
Drain-Source ON-Resistance
RDS (ON)　(ｍΩ)
Drain-Source ON-Resistance
RDS (ON) (mΩ)
ID = -1 A
-0.2 A
200
100
200
-2.5 V,-0.5 A
150
100
VGS = -4 V,ID = -1 A
50
0
0
0
1
2
3
4
5
6
7
8
9
-60
10
-35
-10
15
65
90
115
140
Ambient Temperature Ta (℃ )
Gate-Source Voltage VGS (V)
Vth - Ta
RDS (ON) - ID
-1.4
300
Common Source
Ta = 25℃
VGS = -1.8 V
Gate Threshold Voltage Vth (V)
200
-2.5 V
150
-4 V
100
Common Source
ID = -1 mA
VDS = -3 V
-1.2
250
Drain-Source ON-Resistance
RDS (ON) (mΩ)
40
50
-1
-0.8
-0.6
-0.4
-0.2
-0
0
0
-1
-2
-3
-4
-25
-5
0
25
50
75
100
125
150
Ambient Temperature Ta (℃ )
Drain Current ID (A)
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SSM3J109TU
|Yfs| - ID
IDR - VDS
10
10
Common Source
VGS = 0
Ta = 25℃
25℃
Ta = 85℃
Drain Reverse Current IDR (A)
Forward Transfer Admittance |Yfs| (S)
Common Source
VDS = -3 V
Ta = 25℃
-25℃
1
25℃
1
-25℃
0.1
Ta = 85℃
0.01
0.001
0.1
-0.01
-0.1
-1
0
-10
0.2
0.4
1
1.2
1.4
1000
1000
Switching Time t (ns)
100
Coss
Crss
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25℃
10
-0.1
-1
-10
Common Source
VDD = -10 V
VGS = 0 ～ -2.5 V
Ta = 25℃
toff
Ciss
Capacitance C (pF)
0.8
t - ID
C - VDS
100
tf
ton
10
tr
1
0.01
-100
0.1
PD - Ta
1000
1
10
Drain Current ID (A)
Drain-Source Voltage VDS (V)
Rth - tw
1000
a: Mounted on an FR4 board
(25.4 mm x 25.4 mm x 1.6 mm)
Cu pad: 25.4 mm x 25.4 mm
b: Mounted on a ceramic board
(25.4 mm x 25.4 mm x 0.8 mm)
Cu pad: 25.4 mm x 25.4 mm
c
Transient Thermal Impedance Rth (°C/W)
b
800
Drain Power Dissipation PD (mW)
0.6
Drain-Source Voltage VDS (V)
Drain Current ID (A)
600
a
400
200
20
40
60
80
100
120
140
160
A mbient Temperature Ta (°C)
4
a
Single Pulse
a: Mounted on a ceramic board
(25.4 mm x 25.4 mm x 0.8 mm)
Cu pad: 25.4 mm x 25.4 mm
b: Mounted on an FR4 board
(25.4 mm x 25.4 mm x 1.6 mm)
Cu pad: 25.4 mm x 25.4 mm
c: Mounted on an FR4 board
(25.4 mm x 25.4 mm x 1.6 mm)
Cu pad: 0.45 mm x 0.8 mm x 3
10
1
0.001
0
0
b
100
0.01
0.1
1
10
Pulse W idth tw　(S)
100
1000
2007-11-01
SSM3J109TU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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