MP4507 TOSHIBA Power Transistor Module Silicon Triple Diffused Type (Four Darlington Power Transistors inOne) MP4507 Industrial Applications High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Package with heat sink isolated to lead (SIP 12 pins) • High collector power dissipation (4-device operation) Unit: mm : PT = 5 W (Ta = 25°C) • High collector current: IC (DC) = ±5 A (max) • High DC current gain: hFE = 1000 (min) (VCE = ±3 V, IC = ±3 A) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating NPN PNP Unit Collector-base voltage VCBO 100 −100 V Collector-emitter voltage VCEO 100 −100 V Emitter-base voltage VEBO 5 −5 V DC IC 5 −5 Pulse ICP 8 −8 IB 0.1 −0.1 Collector current Continuous base current Collector power dissipation 3.0 PC (1-device operation) Collector power dissipation Ta = 25°C (4-device operation) Tc = 25°C Junction temperature Storage temperature range ― A JEITA ― A TOSHIBA W 2-32B1C Weight: 6.0 g (typ.) 5.0 W PC Isolation voltage JEDEC 25 VIsol 1000 V Tj 150 °C Tstg −55 to 150 °C Array Configuration 7 R3 R4 8 12 11 4 9 2 5 1 R1 R2 6 R1 ≈ 5 kΩ R3 ≈ 5 kΩ R2 ≈ 200 Ω R4 ≈ 120 Ω 1 2004-07-01 MP4507 Marking MP4507 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Thermal Characteristics Characteristics Thermal resistance fromchannel to ambient Symbol Max Unit ΣRth (j-a) 25 °C/W ΣRth (j-c) 5.0 °C/W TL 260 °C (4 devices operation, Ta = 25°C) Thermal resistance from channel to case (4 devices operation, Tc = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) Electrical Characteristics (Ta = 25°C) (NPN transistor) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 A ― ― 10 μA Collector cut-off current ICEO VCE = 100 V, IB = 0 A ― ― 10 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 A 0.3 ― 2.0 mA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 A 100 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 30 mA, IB = 0 A 100 ― ― V hFE (1) VCE = 3 V, IC = 0.5 A 1000 ― ― hFE (2) VCE = 3 V, IC = 3 A 1000 ― ― Collector-emitter VCE (sat) IC = 3 A, IB = 12 mA ― ― 2.0 Base-emitter VBE (sat) IC = 3 A, IB = 12 mA ― ― 2.5 fT VCE = 3 V, IC = 0.5 A 3 ― ― MHz VCB = 50 V, IE = 0 A, f = 1 MHz ― 40 ― pF ― 0.5 ― ― 3.0 ― ― 2.0 ― Saturation voltage Transition frequency Collector output capacitance Turn-on time Cob ton Input 20 μs Storage time IB2 tstg IB2 IB1 Switching time Fall time IB1 Output 10 Ω DC current gain ― V μs VCC = 30 V tf IB1 = −IB2 = 12 mA, duty cycle ≤ 1% 2 2004-07-01 MP4507 Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward current IFM ― ― ― 5 A Surge current IFSM t = 1 s, 1 shot ― ― 8 A IF = 1 A, IB = 0 A ― ― 2.0 V Forward voltage VF Reverse recovery time trr Reverse recovery charge Qrr IF = 5 A, VBE = −3 V, dIF/dt = −50 A/μs ― 1.0 ― μs ― 8 ― μC Min Typ. Max Unit Electrical Characteristics (Ta = 25°C) (PNP transistor) Characteristics Symbol Test Condition Collector cut-off current ICBO VCB = −100 V, IE = 0 A ― ― −10 μA Collector cut-off current ICEO VCE = −100 V, IB = 0 A ― ― −10 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 A −0.3 ― −2.0 mA Collector-base breakdown voltage V (BR) CBO IC = −1 mA, IE = 0 A −100 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = −30 mA, IB = 0 A −100 ― ― V hFE (1) VCE = −3 V, IC = −0.5 A 1000 ― ― hFE (2) VCE = −3 V, IC = −3 A 1000 ― ― Collector-emitter VCE (sat) IC = −3 A, IB = −12 mA ― ― −2.0 Base-emitter VBE (sat) IC = −3 A, IB = −12 mA ― ― −2.5 fT VCE = −3 V, IC = −0.5 A 3 ― ― MHz VCB = −50 V, IE = 0 A, f = 1 MHz ― 40 ― pF ― 0.5 ― ― 3.0 ― ― 2.0 ― Transition frequency Collector output capacitance ton IB1 Turn-on time Cob Switching time Storage time tstg Input 20 μs ― V Output IB2 10 Ω Saturation voltage IB2 DC current gain IB1 μs VCC = −30 V Fall time tf −IB1 = IB2 = 12 mA, duty cycle ≤ 1% Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward current IFM ― ― ― 5 A Surge current IFSM t = 1 s, 1 shot ― ― 8 A IF = 1 A, IB = 0 A ― ― 2.0 V ― 1.0 ― μs ― 8 ― μC Forward voltage VF Reverse recovery time trr Reverse recovery charge Qrr IF = 5 A, VBE = 3 V, dIF/dt = −50 A/μs 3 2004-07-01 MP4507 (NPN transistor) IC – VCE IC – VBE 8 5.0 8 Common 3.0 Common emitter emitter 2.0 VCE = 3 V (A) 6 1.0 Collector current IC Collector current IC (A) Tc = 25°C 1.5 0.7 4 0.5 IB = 0.3 mA 2 6 4 2 Tc = 100°C −55 25 0 0 0 2 4 6 Collector-emitter voltage 8 0 0 10 0.8 VCE (V) 1.6 2.4 Base-emitter voltage hFE – IC 3.2 VBE (V) VCE – IB 30000 2.4 VCE (V) Common emitter VCE = 3 V 10000 5000 Tc = 100°C Collector-emitter voltage DC current gain hFE 4.0 3000 25 −55 1000 500 0.05 0.1 0.3 1 Collector current IC 3 10 Tc = 25°C 5 1.6 IC = 8 A 3 1.2 1 0.8 0.1 0.4 ) 300 Common emitter 2.0 20 0 0.1 (A) 0.3 1 3 10 30 100 300 Base current IB (mA) VCE (sat) – IC VBE (sat) – IC 10 Common emitter Common emitter Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) 10 IC/IB = 250 5 3 Tc = −55°C 1 25 0.5 0.3 0.1 100 0.3 1 Collector current IC 3 3 Tc = −55°C 1 (A) 25 100 0.5 0.3 0.1 10 IC/IB = 250 5 0.3 1 Collector current IC 4 3 10 (A) 2004-07-01 MP4507 (PNP transistor) IC – VCE Common −100 −30 −8 IC – VBE −15 Common emitter −8 emitter VCE = −3 V (A) −7 −6 Collector current IC Collector current IC (A) Tc = 25°C −3 −4 −1 −2 −6 −4 −2 Tc = 100°C −55 IB = −0.3 mA 25 0 0 0 −2 −4 −6 −8 Collector-emitter voltage 0 0 −10 −0.8 VCE (V) −1.6 Base-emitter voltage hFE – IC Tc = 100°C Common emitter 25 3000 −55 1000 500 300 100 50 −0.05 −0.1 −0.3 −1 −4.0 VBE (V) −3 Collector current IC −10 Common −2.8 VCE = −3 V Collector-emitter voltage DC current gain hFE 5000 −3.2 VCE – IB VCE (V) 10000 −2.4 emitter Tc = 25°C −2.4 −8 −2.0 −7 −6 −1.6 −5 −4 −1.2 −3 −2 −1 −0.8 IC = −0.1 A −30 −0.4 −0.1 (A) −0.3 −1 −3 −10 −30 −100 −300 −500 Base current IB (mA) VCE (sat) – IC VBE (sat) – IC −10 Common emitter −5 Common emitter Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) −10 IC/IB = 250 −3 −1 −0.5 −0.3 −0.1 Tc = −55°C 25 100 −0.3 −1 Collector current IC −3 −5 IC/IB = 250 −3 Tc = −55°C −1 −0.5 −0.3 −0.1 −10 (A) 25 100 −0.3 −1 Collector current IC 5 −3 −10 (A) 2004-07-01 MP4507 rth – tw 300 Transient thermal resistance rth (°C/W) Curves should be applied in thermal 100 limited area. (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (4) 30 (3) (2) 10 (1) 3 -No heat sink/Attached on a circuit board- 1 (1) 1-device operation (2) 2-device operation 0.3 (3) 3-device operation Circuit board (4) 4-device operation 0.1 0.001 0.01 0.1 1 Pulse width 10 100 1000 tw (s) Safe Operating Area (NPN Tr) Safe Operating Area (PNP Tr) 30 −30 10 IC max (pulsed)* −10 IC max (pulsed)* 100 μs* 100 μs* 1 ms* −5 (A) 10 ms* 3 Collector current IC Collector current IC (A) 5 1 0.5 0.3 −0.5 −0.3 *: Single nonrepetitive pulse Tc = 25°C −0.1 Curves must be derated 0.05 linearly with increase in temperature. 0.03 1 3 10 VCEO max 30 100 Tc = 25°C Curves must be derated −0.05 linearly with increase in temperature. −0.03 −1 −3 −10 300 Collector-emitter voltage VCE (V) Junction temperature increase ΔTj (°C) PT (W) Total power dissipation (3) (2) Circuit board (1) 2 0 0 40 80 −100 −300 ΔTj – PT (4) 4 −30 160 (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation Attached on a circuit board 6 VCEO max Collector-emitter voltage VCE (V) PT – Ta 8 1 ms* −1 *: Single nonrepetitive pulse 0.1 10 ms* −3 120 160 (1) Ambient temperature Ta (°C) (3) (4) 80 Circuit board Attached on a circuit board (1) 1-device operation 40 (2) 2-device operation (3) 3-device operation 0 0 200 (2) 120 (4) 4-device operation 2 4 6 Total power dissipation 6 8 PT 10 (W) 2004-07-01 MP4507 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2004-07-01