MP4104 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4104 Industrial Applications High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Small package by full molding (SIP 10 pins) • High collector power dissipation (4-device operation) • High collector current: IC (DC) = 4 A (max) • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1.5 A) Unit: mm : PT = 4 W (Ta = 25°C) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 6 V DC IC 4 Pulse ICP 6 IB Collector current Continuous base current Collector power dissipation (1-device operation) Collector power dissipation (4-device operation) Junction temperature Storage temperature range JEDEC ― A JEITA ― 0.5 A TOSHIBA PC 2.0 W PT 4.0 W Tj 150 °C Tstg −55 to 150 °C 2-25A1A Weight: 2.1 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Array Configuration 3 5 4 2 7 6 9 8 1 10 R1 R2 R1 ≈ 4.5 kΩ R2 ≈ 300 Ω 1 2006-10-27 MP4104 Marking MP4104 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Thermal Characteristics Characteristics Thermal resistance from junction to ambient Symbol Max Unit ΣRth (j-a) 31.3 °C/W TL 260 °C (4-device operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 120 V, IE = 0 A ― ― 10 μA Collector cut-off current ICEO VCE = 100 V, IB = 0 A ― ― 10 μA Emitter cut-off current IEBO VEB = 6 V, IC = 0 A 0.5 ― 2.5 mA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 A 120 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 A 100 ― ― V hFE (1) VCE = 2 V, IC = 1.5 A 2000 ― 15000 hFE (2) VCE = 2 V, IC = 3.0 A 1000 ― ― Collector-emitter VCE (sat) IC = 1.5 A, IB = 3 mA ― ― 1.5 Base-emitter VBE (sat) IC = 1.5 A, IB = 3 mA ― ― 2.0 fT VCE = 2 V, IC = 0.5 A ― 60 ― MHz VCB = 10 V, IE = 0 A, f = 1 MHz ― 30 ― pF ― 0.3 ― ― 2.0 ― ― 0.4 ― Saturation voltage Transition frequency Collector output capacitance Turn-on time Cob ton Input Storage time 20 μs tstg IB2 IB2 IB1 Switching time IB1 Fall time tf Output 20 Ω DC current gain ― V μs VCC = 30 V IB1 = −IB2 = 3 mA 2 2006-10-27 MP4104 IC – VCE IC – VBE 6 6 10 3 Common emitter 1 5 (A) (A) 0.3 4 Collector current IC Collector current IC 5 VCE = 2 V 0.5 0.2 3 2 IB = 0.15 mA 1 Common emitter Ta = 25°C 1 2 3 4 Collector-emitter voltage 5 6 3 2 Ta = 100°C 1 0 0 0 4 0 0 7 0.4 VCE (V) 0.8 1.2 VCE (V) 25 −55 1000 500 0.1 VBE (V) 0.3 0.5 1 Collector current IC 3 5 10 Ta = 25°C 2.0 IC = 6 A 1.6 5 4 3 2 1.2 1 0.8 0.1 0.4 0.5 ) 300 0.05 2.8 Common emitter Ta = 100°C 3000 2.4 VCE – IB Common emitter VCE = 2 V 5000 2.0 2.4 Collector-emitter voltage DC current gain hFE 10000 1.6 Base-emitter voltage hFE – IC 20000 −55 25 0 0.1 (A) 0.3 1 3 10 30 100 300 500 Base current IB (mA) VCE (sat) – IC VBE (sat) – IC 10 Common emitter Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) 10 IC/IB = 500 5 3 1 Ta = −55°C 0.5 100 0.3 0.1 0.3 25 0.5 1 Collector current IC 3 5 Common emitter 3 Ta = −55°C 1 (A) 25 100 0.5 0.3 0.1 10 IC/IB = 500 5 0.3 0.5 1 Collector current IC 3 3 5 10 (A) 2006-10-27 MP4104 rth – tw Transient thermal resistance rth (°C/W) 300 100 30 Curves should be applied in thermal (4) limited area. (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (1) (3) (2) 10 3 -No heat sink/Attached on a circuit board(1) 1-device operation (2) 2-device operation (3) 3-device operation Circuit board (4) 4-device operation 1 0.3 0.001 0.01 0.1 1 Pulse width 10 100 tw (s) Safe Operating Area ΔTj – PT 160 Transient thermal resistance rth (°C/W) 10 IC max (pulsed)* 5 1 ms* 100 μs* 10 ms* 1 0.5 0.3 0.1 *: Single nonrepetitive pulse Ta = 25°C 0.05 Curves must be derated linearly with increase in temperature. 0.03 3 5 10 1 (1) 50 (3) Circuit board -Circuit board40 (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation 1 2 3 Total power dissipation 100 (4) 80 VCEO max 30 (2) 120 0 0 4 PT 5 (W) 200 Collector-emitter voltage VCE (V) PT – Ta PT (W) 8 Total power dissipation Collector current IC (A) 3 1000 -Attached on a circuit board(1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation 6 4 (4) Circuit board (3) (2) 2 0 0 (1) 40 80 120 160 200 Ambient temperature Ta (°C) 4 2006-10-27 MP4104 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-10-27