TOSHIBA TPC6D03

TPC6D03
TOSHIBA Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode
TPC6D03
High-Speed Switching Applications
DC-DC Converter Applications
•
Unit: mm
A PNP transistor and a Schottky barrier diode are mounted on a
compact and slim package.
Maximum Ratings
Transistor (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−20
V
Collector-emitter voltage
VCEO
−20
V
Emitter-collector voltage
VECO
−9.5
V
Emitter-base voltage
VEBO
−9.5
V
DC
IC
−1.2
A
Pulse
ICP
−2.0
A
Base current
IB
−120
mA
Collector power dissipation
(Q1 single-device operation)
PC
(Note 1)
400
mW
Junction temperature
Tj
150
°C
Collector current
Diode (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
30
V
Average forward current
IF (AV)
0.7
A
IFSM
7.0
A
Peak one cycle surge forward current
(sine wave)
Power dissipation
(D1 single-device operation)
PD
(Note 1)
320
mW
Junction temperature
Tj
125
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3T1F
Weight: 0.011 g (typ.)
Maximum Ratings for Transistor and Diode (Ta = 25°C)
Characteristics
Total power dissipation
(simultaneous operation)
Storage temperature range
Symbol
Rating
Unit
600
mW
−55~150
°C
Symbol
Max
Unit
Rth (j-a)
(Note 1)
312
°C/W
PT
(Note 2)
Tstg
Thermal Resistance Characteristics
(for transistor and diode)
Characteristics
Thermal resistance, junction to
ambient (single-device operation)
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick,
2
Cu area: 645 mm )
2
Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm )
Total power dissipation value when two devices are operated at the same time
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TPC6D03
Electrical Characteristics (Ta = 25°C)
Transistor
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −20 V, IE = 0
⎯
⎯
−100
nA
Emitter cut-off current
IEBO
VEB = −9.5 V, IC = 0
⎯
⎯
−100
nA
V (BR) CEO
V
Collector-emitter breakdown voltage
DC current gain
IC = −10 mA, IB = 0
−20
⎯
⎯
hFE (1)
VCE = −2 V, IC = −0.15 A
140
⎯
350
hFE (2)
VCE = −2 V, IC = −0.5 A
85
⎯
⎯
IC = −0.5 A, IB = −16.7 mA
⎯
⎯
−0.17
V
V
Collector-emitter saturation voltage
VCE (sat)
Base-emitter saturation voltage
VBE (sat)
Rise time
Switching time
tr
Storage time
tstg
Fall time
tf
IC = −0.5 A, IB = −16.7 mA
⎯
⎯
−1.10
See Figure 1 circuit diagram.
⎯
40
⎯
VCC ∼
− −12 V, RL = 24 Ω
⎯
135
⎯
IB1 = −IB2 = −16.7 mA
⎯
37
⎯
ns
VCC
IB2
Input
RL
20 µs
IB1
Output
IB1
IB2
Duty cycle < 1%
Figure 1 Switching Time Test Circuit & Timing Chart
Circuit Configuration
6
5
Q1
1
Marking
4
Lot code (month)
D1
2
Part No.
(or abbreviation code)
Pin #1
3
H8C
Product-specific code
Lot code
(year)
Diode
Characteristics
Symbol
Test Condition
IF = 0.5 A
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Min
Typ.
Max
Unit
⎯
0.35
0.4
V
Peak forward voltage
VFM (1)
Peak forward voltage
VFM (2)
IF = 0.7 A
⎯
0.38
0.43
V
Repetitive peak reverse voltage
VRRM
IR = 3 mA
30
40
⎯
V
Repetitive peak reverse current
IRRM
VR = 10 V
⎯
25
100
µA
VR = 10 V, f = 1 MHz
⎯
19
⎯
pF
Junction capacitance
Cj
Handling Precaution
Schottky barrier diodes have large-reverse-current-leakage characteristic compared to other rectifier products.
This current leakage and not proper operating temperature or voltage may cause thermal runaway.
Please take forward and reverse loss into consideration during design.
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TPC6D03
Transistor
IC – VCE
Common emitter
Ta = 25°C
Single
nonrepetitive pulse
−30
−20
Ta = 100°C
−15
25
hFE
−1.2
hFE – IC
1000
−10
DC current gain
Collector current
IC (A)
−1.6
−8
−0.8
−6
−4
IB = −2 mA
−0.4
100
−55
10
Common emitter
VCE = −2 V
Single nonrepetitive pulse
1
−0.001
−0.01
−0.1
0
0
0
−0.1
−0.2
−0.3
−0.4
−0.5
Collector-emitter voltage
−0.6
VCE
−0.7
(V)
VCE (sat) – IC
VBE (sat) – IC
−10
Base-emitter saturation voltage
VBE (sat) (V)
Collector-emitter saturation voltage
VCE (sat) (V)
Common emitter
25
−0.1
Ta = 100°C
−55
−0.01
−0.001
−0.001
−0.01
−10
Collector current IC (A)
−1
IC/IB = 30
Single nonrepetitive pulse
−1
−0.1
−1
Common emitter
IC/IB = 30
Single nonrepetitive pulse
25
−55
−1
Ta = 100°C
−0.1
−0.001
−10
−0.01
Collector current IC (A)
−0.1
−1
−10
Collector current IC (A)
Safe Operating Area
−10
IC (A)
VCE = −2 V
Single nonrepetitive pulse
Collector current
IC (A)
Collector current
−1.2
Common emitter
−0.9
Ta = 100°C
−0.6
25
−55
−0.3
0
0
−0.3
−0.6
−0.9
Base-emitter voltage
VBE
−1.2
−1.5
(V)
*: Single nonrepetitive pulse Ta = 25°C
Q1 single-device operation.
When the device is mounted on an FR4 board
(glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
IC max (pulsed) *
10 ms* 1 ms*
100 µs*
IC max (continuous)
100 ms*
−1
10 s*
DC operation
(Ta = 25°C)
−0.1 Note that the curves for 100
ms, 10 s and DC operation will
be different when the devices
aren’t mounted on an FR4
board (glass epoxy, 1.62mm
thick, Cu area: 645 mm ).
These characteristic curves
must be derated linearly with
increase in temperature.
−0.01
−0.1
−1
Collector-emitter voltage
3
VCEO max
IC – VBE
−1.5
−10
VCE
−100
(V)
2004-09-02
TPC6D03
Diode
IF – VF
PF (AV) – IF (AV)
10
0.5
Average forward power dissipation
PF (AV) (W)
Instantaneous forward current
IF
(A)
DC
1
125
0.1
Ta = 25°C
0.01
0.4
90
0.3
60
α = 30°
Rectangular
waveform
0.2
0.1
0° α 360°
Conduction angle α
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
Instantaneous forward voltage
1.4
0
0
1.6
VF (V)
0.2
0.4
0.6
Average forward current
Ta max – IF (AV)
140
0.8
Cj – VR
(typical)
f = 1 MHz
Ta = 25°C
(pF)
DC
Cj
0° α 360°
IF (AV)
Conduction angle α
80
VR = 15 V
60
40
180
α = 120°
20
0
0
0.2
0.4
0.6
0.8
Average forward current
1.0
1.2
1.2
IF (AV) (A)
120
100
1.0
100
Rectangular
waveform
Junction capacitance
Maximum allowable temperature
Ta max (°C)
180
120
10
1.4
1
1
IF (AV) (A)
10
Reverse voltage
4
100
VR (V)
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TPC6D03
Diode
Surge forward current (non-repetitive)
8
IR – Tj
100
Pulse measurement
(one cell)
IR (mA)
6
Reverse current
Surge forward current
IFSM
(A)
f = 50 Hz
Ta = 25°C
4
2
(typical)
30
20
10
15
5
10
1
0.1
VR = 3 V
0
1
10
0.01
0
100
Number of cycles
Junction temperature
PR (AV) – VR
Average reverse power dissipation
PR (AV) (W)
1.2
1.0
0.6
100
Tj
150
(°C)
(typical)
Rectangular waveform
360°
0°
VR
0.8
50
DC
300
α
Conduction angle α
Tj = 125°C
240
180
0.4
120
0.2
0
0
α = 60°
10
Reverse voltage
20
30
VR (V)
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TPC6D03
Transistor and Diode
rth (j-a) – tw
Transient thermal resistance
rth (j-a) (°C/W)
1000
100
Curves should be applied in thermal limited area.
10
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board
(glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Either at Q1 or D1 single-operation
1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(s)
Permissible Power Dissipation for
Simultaneous Operation
Permissible power dissipation for Q1
PC (W)
0.5
0.4
(0.25, 0.35)
0.3
0.2
DC operation
0.1
0
0
Ta = 25°C
Mounted on an FR4
board (glass epoxy,
1.6 mm thick,
Cu area: 645 mm2)
0.1
0.2
0.3
0.4
0.5
Permissible power dissipation for D1 PD (W)
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2004-09-02
TPC6D03
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
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