TOSHIBA TLP4007G

TLP4007G
TOSHIBA Photocoupler
Photorelay
TLP4007G
Telecommunication
Measurement Equipment
Security Equipment
FA
Unit: mm
The Toshiba TLP4007G consists of an aluminum gallium arsenide
infrared emitting diode optically coupled to a photo-MOSFET and is the
1-form-A/B photorelay with 350-V withstanding voltage.
•
Normally closed (1-form-B) device, normally opened (1-form-A) device
•
Peak off-state voltage: 350 V (min)
•
Trigger LED current: 3 mA (max)
•
On-state current: 100 mA (max)
•
On-state resistance: 50 Ω (max)
•
Isolation voltage: 2500 Vrms (min)
Pin Configuration (top view)
1
8
JEDEC
―
JEITA
―
TOSHIBA
11-10C4
Weight: 0.54 g (typ.)
2
7
1: Anode (1b)
3
6
2: Cathode (1b)
3: Anode (1a)
4: Cathode (1a)
5: Drain D1 (1a)
6: Drain D2 (1a)
4
5
7: Drain D3 (1b)
8: Drain D4 (1b)
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TLP4007G
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
IF
50
mA
ΔIF/°C
−0.5
mA/°C
Peak forward current
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
VOFF
350
V
ION
100
mA
ΔION/°C
−1.0
mA/°C
Tj
125
°C
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature range
Topr
−40 to 85
°C
Lead soldering temperature (10 s)
Tsol
260
°C
BVS
2500
Vrms
Forward current
LED
Forward current derating (Ta >
= 25°C)
Off-state output terminal voltage
One channel operation
Detector
On-state current
On-state current derating
(Ta >
= 25°C)
Two channel operations
(1a1b simultaneous operation)
One channel operation
Two channel operations
(1a1b simultaneous operation)
Junction temperature
Isolation voltage (AC, 1 min, R.H. <
= 60%)
(Note 1)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together.
Recommended Operating Conditions
Characteristics
Symbol
Min
Typ.
Max
Unit
Supply voltage
VDD
⎯
⎯
280
V
Forward current
IF
5
10
25
mA
On-state current
ION
⎯
⎯
100
mA
Operating temperature
Topr
−20
⎯
65
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Electrical Characteristics (Ta = 25°C)
LED
Characteristics
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
⎯
⎯
10
μA
Capacitance
Detector
Symbol
Off-state current
Capacitance (1b)
Capacitance (1a)
CT
IOFF
COFF
V = 0, f = 1 MHz
⎯
30
⎯
pF
VOFF = 350 V
⎯
⎯
1
μA
V = 0, f = 1 MHz, IF = 5 mA
⎯
30
⎯
V = 0, f = 1 MHz
⎯
30
⎯
2
pF
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TLP4007G
Coupled Electrical Characteristics (Ta = 25°C)
Characteristics
Trigger LED current
Return LED current
On-state resistance
(Note 2)
Form
Symbol
Test Condition
Min
Typ.
Max
Unit
1a
IFT
ION = 100 mA
1b
IFC
IOFF = 10 μA
⎯
1
3
mA
1a
IFC
IOFF = 10 μA
1b
IFT
ION = 100 mA
0.1
⎯
⎯
mA
⎯
RON
ION = 100 mA, t < 1s
⎯
27
35
ION = 100 mA
⎯
40
50
Min
Typ.
Max
Unit
⎯
pF
⎯
Ω
Ω
Note 2: 1-form-A: IF = 5 mA, 1-form-B: IF = 0 mA
Isolation Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Capacitance input to output
CS
VS = 0, f = 1 MHz
Isolation resistance
RS
VS = 500 V, R.H. <
= 60%
⎯
5 × 10
BVS
10
14
2500
⎯
⎯
AC, 1 s, in oil
⎯
5000
⎯
DC, 1 min, in oil
⎯
5000
⎯
Vdc
Min
Typ.
Max
Unit
⎯
0.25
1
⎯
0.5
1
⎯
0.3
1
⎯
0.15
1
AC, 1 min
Isolation voltage
0.8
10
Vrms
Switching Characteristics (Ta = 25°C)
Characteristics
1b
1a
Symbol
Turn-on time
tON
Turn-off time
tOFF
Turn-on time
tON
Turn-off time
tOFF
Test Condition
RL = 200 Ω
VDD = 20 V, IF = 5 mA
(Note 3)
RL = 200 Ω
VDD = 20 V, IF = 5 mA
(Note 3)
ms
ms
Note 3: Switching time test circuit
IF
1
1b
8
RL
VDD
IF
VOUT
2
VOUT
7
10%
tON
IF
3
1a
6
RL
90%
tOFF
VDD
IF
VOUT
4
VOUT
5
10%
tON
3
90%
tOFF
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TLP4007G
Characteristics curves for 1-form-A/B
IF – Ta
ION – Ta
160
Allowable on-state current ION (mA)
Allowable forward current
IF (mA)
100
80
60
40
20
0
−20
0
20
40
60
80
100
120
80
40
0
−20
120
Ambient temperature Ta (°C)
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
IF – V F
100
Ta = 25°C
Forward current IF
(mA)
30
10
3
1
0.3
0.1
0.6
0.8
1
1.2
1.4
Forward voltage VF
1.6
1.8
(V)
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TLP4007G
Characteristics curves for 1-form-B
RON – Ta
IFC – Ta
50
5
ION = 100 mA
t<1s
Trigger LED current IFC (mA)
On-state resistance RON (Ω)
ION = 100 mA
40
30
20
10
0
−40
−20
0
20
40
60
80
t<1s
4
3
2
1
0
−40
100
−20
Ambient temperature Ta (°C)
0
IOFF – Ta
80
100
ION – VON
Ta = 25°C
(mA)
300 IF = 5 mA
100
On-state current ION
(nA)
60
150
VOFF = 350 V
Off-state current IOFF
40
Ambient temperature Ta (°C)
1000
30
10
3
1
0
20
20
40
60
80
100
50
0
−50
−100
−150
−4
100
−3
Ambient temperature Ta (°C)
−2
−1
0
1
On-state voltage VON
2
3
4
(V)
tON, tOFF – IF
3000
tON, tOFF – Ta
Ta = 25°C
3000
VDD = 20 V, RL = 200 Ω
(μs)
tON
300
Switching time tON, tOFF
Switching time tON, tOFF
(μs)
VDD = 20 V, RL = 200 Ω
1000
100
30
10
1
tOFF
3
5
10
Input current
30
50
100
IF = 5 mA
300
IF (mA)
tON
100
30
10
−40
300
tOFF
1000
−20
0
20
40
60
80
100
Ambient temperature Ta (°C)
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TLP4007G
Characteristics curves for 1-form-A
IFT – Ta
RON – Ta
5
ION = 100 mA
IF = 5 mA
t<1s
40
ION = 100 mA
Trigger LED current IFC (mA)
On-state resistance RON (Ω)
50
30
20
10
0
−20
0
20
40
60
80
t<1s
4
3
2
1
0
−40
100
−20
0
IOFF – Ta
80
100
150
VOFF = 350 V
(mA)
Ta = 25°C
30
On-state current ION
(nA)
60
ION – VON
100
Off-state current IOFF
40
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
10
3
1
−40
−20
0
20
40
60
80
100
50
0
−50
−100
−150
−4
100
IF = 5 mA
−3
Ambient temperature Ta (°C)
−2
−1
tON, tOFF – IF
1
2
3
4
(V)
tON, tOFF – Ta
2000
Ta = 25°C
1000
0
On-state voltage VON
2000
(μs)
VDD = 20 V, RL = 200 Ω
Switching time tON, tOFF
(μs)
Switching time tON, tOFF
20
300
tON
100
30
VDD = 20 V, RL = 200 Ω
1000 IF = 5 mA
tON
300
100
tOFF
30
tOFF
10
1
3
10
Input current
30
10
−40
100
IF (mA)
−20
0
20
40
60
80
100
Ambient temperature Ta (°C)
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TLP4007G
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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