MT4S200U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S200U UHF-SHF Low Noise Amplifier Application Unit: mm FEATURES • Low Noise Figure :NF=1.7dB (@f=5.8GHz) • High Gain:|S21e|2=9.5dB (@f=5.8GHz) Marking 4 3 P ２ 1 USQ 2 Maximum Ratings (Ta = 25°C) Characteristics Rating Unit Collector-Base voltage VCBO 8 V Collector-Emitter voltage VCEO 4 V Emitter-Base voltage VEBO 1.2 V Collector-Current IC 35 mA Base-Current IB 5 mA Collector Power dissipation Pc 100 mW Collector Power dissipation PC(Note1) 140 mW Tj 150 °C Tstg −55~150 °C Junction temperature Storage temperature Range JEDEC ― JEITA ― TOSHIBA Symbol 1.Collector 2.Emitter 3.Base 4.Emitter 2-2K1E Weight: 0.006 g (typ.) Note1 : Ta=25degC (When mounted on a 1.6mm(t) glass epoxy PCB) 1 2006-12-26 MT4S200U Microwave Characteristics (Ta = 25°C) Characteristics Transition Frequency Insertion Gain Noise Figure Symbol fT Test Condition VCE=3V, IC=15mA Min Typ. Max Unit ⎯ 30 ⎯ GHz 15.0 17.5 ⎯ dB 2 VCE=3V, IC=15mA,f=2GHz 2 VCE=3V, IC=15mA, f=5.8GHz ⎯ 9.5 ⎯ dB NF(1) VCE=3V, IC=5mA, f=2GHz ⎯ 0.75 1.0 dB NF(2) VCE=3V, IC=5mA, f=5.8GHz ⎯ 1.7 ⎯ dB Min Typ. Max Unit ⎯ ⎯ 1 µA |S21e| (1) |S21e| (2) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector Cut-off Current ICBO VCB=8V, IE=0 Emitter Cut-off Current IEBO VEB=1V, IC=0 DC Current Gain hFE VCE=3V, IC=15mA Output Capacitance Cob Reverse Transfer Capacitance Cre ⎯ ⎯ 1 µA 100 ⎯ 260 - VCB=3V, IE=0, f=1MHz ⎯ 0.25 0.5 pF VCB=3V, IE=0, f=1MHz (Note 1) ⎯ 0.074 0.18 pF Note 1: Cre is measured by 3 terminal method with capacitance bridge. Caution: This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of fT=60GHz class is used for this product. Please make enough tool and equipment earthed when you handle. 2 2006-12-26 MT4S200U IC-VCE 25 20 1000 COMMON EMITTER,Ta=25℃ IB= 160uA 140uA 120uA 100uA 15 DC Current Gain hFE Collector-current IC(mA) 30 hFE-IC 80uA 60uA 10 40uA 5 20uA 100 0 COMMON EMITTER VCE=3V 10 0.0 1.0 2.0 3.0 4.0 5.0 0.1 Collector-Emitter voltage VCE(V) 20 COMMON EMITTER VCE=3V Ta=25℃ 18 1 0.1 0.01 0.001 0.0 0.2 0.4 0.6 0.8 16 VCE=3v 14 VCE=2v 12 10 8 6 4 f=2GHz Ta=25℃ 2 0 1.0 1 Base-Emitter voltage VBE(V) 10 30 Transition Frequency fT(GHz) Insertion Gain |S21e|2(dB) 35 8 6 VCE=3v 2 f=5.8GHz Ta=25 ℃ 0 10 100 fT-IC 12 4 10 Collector-current IC(mA) |S21e|2-IC 5.8GHz 1 100 |S21e|2-IC 2GHz Insertion Gain |S21e|2(dB) Collector-current IC(mA) 10 10 Collector-current IC(mA) IC-VBE 100 1 25 20 15 10 5 VCE=3V Ta=25℃ 0 100 1 Collector-current IC(mA) 10 100 Collector-current IC(mA) 3 2006-12-26 MT4S200U NF,Ga-IC 5.0 IE=0,f=1MHz,Ta=25℃ 25.0 0.35 4.0 0.30 Noise Figure NF(dB) Cob 0.25 0.20 0.15 Cre 0.10 0.05 0.00 2GHz Ga 3.0 1 10 2GHz NF 2.0 10.0 1.0 5.0 VCE=3v Ta=25℃ 1 Collector-Base voltage VCB (V) 20.0 15.0 5.8GHｚ Ga 0.0 0.1 5.8GHz NF 10 Associated Gain Ga(dB) 0.40 Output Capacitance Cob(pF) Reverse Transfer Capacitance Cre(pF) Cre,Cob-VCB 0.0 100 Collector-current IC(mA) 4 2006-12-26 MT4S200U 15 10 10 Output Power [dB(mW)] 15 5 0 -5 VCE=3v Ic=15mA f=2GHz Zs=ZL=50ohm -10 -15 -30 -20 -10 0 5 0 -5 VCE=3v Ic=15mA f=5.8GHz Zs=ZL=50ohm -10 -15 -20 10 IM3 (2GHz) IM3 (5.8GHz) 30 20 -10 -20 -30 -40 IM3 -50 -60 VCE=3v,Ic=15mA f=2GHz,2.001GHz -70 -80 -30 10 10 Pout -40 0 Input Power [dB(mW)] 20 0 -10 Input Power [dB(mW)] 30 10 Output Power [dB(mW)] Output Power vs Input Power Output Power [dB(mW)] Output Power [dB(mW)] Output Power vs Input Power -20 -10 0 0 -10 Pout -20 -30 IM3 -40 -50 -60 VCE=3v,Ic=15mA f=5.8GHz,5.801GHz -70 10 -80 -30 -20 -10 0 10 20 Input Power [dB(mW)] Input Power [dB(mW)] 5 2006-12-26 MT4S200U RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-12-26