2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 6 V Collector current IC 1.5 A Base current IB 1.0 A Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 1.0 10 W Tj 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2006-11-21 2SD1220 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 150 V, IE = 0 ― ― 1.0 μA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 1.0 μA V (BR) CEO IC = 10 mA, IB = 0 150 ― ― V VCE = 5 V, IC = 200 mA 60 ― 320 IC = 500 mA, IB = 50 mA ― ― 1.5 V VCE = 5 V, IC = 5 mA 0.5 ― 0.8 V VCE = 5 V, IC = 200 mA 20 100 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 13 20 pF Collector-emitter breakdown voltage hFE DC current gain (Note) Collector-emitter saturation voltage VCE (sat) Base-emitter voltage VBE Transition frequency fT Collector output capacitance Cob Note: hFE classification R: 60 to 120, O: 100 to 200, Y: 160 to 320 Marking D1220 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-21 2SD1220 IC – VCE 1.6 100 IC – VBE 1.6 80 40 60 VCE = 5 V Tc = 25°C (A) 1.2 10 Collector current IC (A) Collector current IC Common emitter Common emitter 20 5 0.8 3 2 0.4 1.2 0.8 25 Tc = 100°C 0 0.4 IB = 1 mA 0 0 0 4 8 12 Collector-emitter voltage 16 0 0 20 0.4 0.8 Base-emitter voltage VCE (V) hFE – IC 100 VCE = 2 V 50 30 0 100 50 30 Common emitter VCE = 10 V Tc = 25°C 5V 50 100 300 500 Collector current IC 10 20 1000 50 (mA) 100 VCE (sat) – IC (mA) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) 1000 0.5 Common emitter Tc = 25°C 0.1 0.01 10 300 Collector current IC 0.5 0.03 VBE (V) Tc = 100°C Common emitter 0.05 2.0 25 10 DC current gain hFE DC current gain hFE 300 5 0.3 1.6 hFE – IC 300 10 20 1.2 IC/IB = 10 5 30 100 300 Collector current IC Common emitter 0.3 0.1 Tc = 100°C 0.05 25 0.03 0 0.01 10 1000 (mA) IC/IB = 10 30 100 300 Collector current IC 3 1000 (mA) 2006-11-21 2SD1220 fT – IC Cob – VCB 100 Common emitter 300 Collector output capacitance Cob (pF) Transition frequency fT (MHz) 500 Tc = 25°C VCE = 5 V 100 50 2 30 Common emitter 50 f = 1 MHz 30 Tc = 25°C 10 5 2 1 10 2 5 10 30 100 Collector current IC 300 3 Safe Operating Area (1) Tc = Ta infinite heat sink (2) Ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink 3 6 0 0 IC max (pulsed)* IC max (continuous) (A) (1) Collector current IC PC (W) Collector power dissipation 5 8 2 100 Collector-base voltage VCB (V) PC – Ta 4 30 (mA) 12 10 10 (2) (3) 1 ms* 100 ms* 1 0.5 10 ms* DC operation Tc = 25°C 0.3 *: Single nonrepetitive pulse 0.1 Tc = 25°C Curves must be derated linearly 25 50 75 100 125 150 175 0.05 with increase in temperature. Ambient temperature Ta (°C) 0.03 2 VCEO max 5 10 30 Collector-emitter voltage 4 100 300 VCE (V) 2006-11-21 2SD1220 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-21