TOSHIBA SSM6L09FU

SSM6L09FU
TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type
SSM6L09FU
Power Management Switch
High Speed Switching Applications
•
Small package
•
Low on resistance
Unit: mm
Q1: Ron = 0.7 Ω (max) (@VGS = 10 V)
Q2: Ron = 2.7 Ω (max) (@VGS = −10 V)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
30
V
Gate-Source voltage
VGSS
±20
V
DC
ID
400
Pulse
IDP
800
Drain current
mA
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
−30
V
Gate-Source voltage
VGSS
±20
V
DC
ID
−200
Pulse
IDP
−400
Drain current
JEDEC
―
JEITA
―
TOSHIBA
2-2J1C
Weight: 6.8 mg (typ.)
mA
Absolute Maximum Ratings (Q1, Q2 common) (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
PD (Note 1)
300
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain power dissipation (Ta = 25°C)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm × 6) Figure 1.
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SSM6L09FU
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Marking
6
Figure 1: 25.4 mm × 25.4 mm × 1.6 t,
Equivalent Circuit
Cu Pad: 0.32 mm2 × 6
(top view)
5
4
6
5
4
Q1
K5
1
2
0.8 mm
0.4 mm
Q2
3
1
2
3
Q1 Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Gate leakage current
IGSS
Drain-Source breakdown voltage
Drain cut-off current
V (BR) DSS
IDSS
Drain-Source ON resistance
Typ.
Max
Unit
VGS = ±16 V, VDS = 0
⎯
⎯
±1
μA
ID = 1 mA, VGS = 0
30
⎯
⎯
V
VDS = 20 V, VGS = 0
⎯
⎯
1
μA
Vth
VDS = 5 V, ID = 0.1 mA
1.1
⎯
1.8
V
VDS = 5 V, ID = 200 mA
(Note2)
270
⎯
⎯
mS
ID = 200 mA, VGS = 10 V
(Note2)
⎯
0.53
0.7
ID = 200 mA, VGS = 4 V
(Note2)
⎯
0.8
1.2
ID = 200 mA, VGS = 3.3 V
(Note2)
⎯
1.0
1.7
⎯
20
⎯
pF
⎯
7
⎯
pF
⎯
16
⎯
pF
RDS (ON)
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Switching time
Min
⎪Yfs⎪
Gate threshold voltage
Forward transfer admittance
Test Condition
VDS = 5 V, VGS = 0, f = 1 MHz
Turn-on time
ton
VDD = 5 V, ID = 200 mA,
⎯
72
⎯
Turn-off time
toff
VGS = 0~4 V
⎯
68
⎯
Ω
ns
Note2: Pulse test
Switching Time Test Circuit (Q1: Nch MOS FET)
(a) Test circuit
(b) VIN
4V
OUT
4V
90%
50 Ω
IN
0
10 μs
0V
RL
VDD
(c) VOUT
VDD = 5 V
Duty <
= 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
10%
VDD
VDS (ON)
10%
90%
tr
ton
2
tf
toff
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SSM6L09FU
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this
product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower
voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device.
Q2 Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Gate leakage current
IGSS
Drain-Source breakdown voltage
Drain cut-off current
V (BR) DSS
IDSS
Gate threshold voltage
Vth
⎪Yfs⎪
Forward transfer admittance
Drain-Source ON resistance
RDS (ON)
Test Condition
VGS = ±16 V, VDS = 0
ID = −1 mA, VGS = 0
VDS = −30 V, VGS = 0
Min
Typ.
Max
Unit
⎯
⎯
±1
μA
−30
⎯
⎯
V
⎯
⎯
−1
μA
VDS = −5 V, ID = −0.1 mA
−1.1
⎯
−1.8
V
VDS = −5 V, ID = −100 mA (Note2)
115
⎯
⎯
mS
ID = −100 mA, VGS = −10 V (Note2)
⎯
2.1
2.7
ID = −100 mA, VGS = −4 V (Note2)
⎯
3.3
4.2
ID = −100 mA, VGS = −3.3 V(Note2)
⎯
4.0
6.0
Ω
Input capacitance
Ciss
VDS = −5 V, VGS = 0, f = 1 MHz
⎯
22
⎯
pF
Reverse transfer capacitance
Crss
VDS = −5 V, VGS = 0, f = 1 MHz
⎯
5
⎯
pF
Output capacitance
Coss
VDS = −5 V, VGS = 0, f = 1 MHz
⎯
14
⎯
pF
Switching time
Turn-on time
ton
VDD = −5 V, ID = −100 mA,
⎯
85
⎯
Turn-off time
toff
VGS = 0~−4 V
⎯
85
⎯
ns
Note2: Pulse test
Switching Time Test Circuit (Q2: Pch MOS FET)
(a) Test circuit
(b) VIN
0V
OUT
0
50 Ω
IN
−4 V
10 μs
90%
−4 V
RL
VDD
10%
(c) VOUT
VDD = −5 V
Duty <
= 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
VDS (ON)
VDD
90%
10%
tr
ton
tf
toff
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA for
this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires
lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device.
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Q1 (Nch MOS FET)
ID – VDS
RDS (ON) – ID
1000
2
Common Source
Drain current ID
(mA)
4
Drain-Source on resistance
RDS (ON) (Ω)
10
800
3.3
600
3.0
400
2.8
2.6
200
0.5
1
1.5
Drain-Source voltage
Ta = 25°C
1.6
1.4
1.2
VGS = 3.3 V
1
4V
0.8
0.6
10 V
0.4
0.2
VGS = 2.4 V
0
0
Common Source
1.8
Ta = 25°C
0
0
2
200
400
800
1000
Drain current ID (mA)
VDS (V)
ID – VGS
RDS (ON) – VGS
1000
2
Common Source
Drain-Source on resistance
RDS (ON) (Ω)
100
(mA)
Common Source
1.8
VDS = 5 V
Drain current ID
600
25°C
10
Ta = 100°C
−25°C
1
0.1
ID = 200 mA
1.6
1.4
1.2
Ta = 100°C
1
0.8
25°C
0.6
−25°C
0.4
0.2
0.01
0
1
2
3
Gate-Source voltage
0
0
4
VGS (V)
2
4
6
Gate-Source voltage
8
10
VGS (V)
⏐Yfs⏐ – ID
1000
RDS (ON) – Ta
Common Source
2
500
Common Source
ID = 200 mA
Forward transfer admittance
⏐Yfs⏐ (mS)
Drain-Source on resistance
RDS (ON) (Ω)
1.8
1.6
1.4
VGS = 3.3 V
1.2
4V
1
0.8
10 V
0.6
VDS = 5 V
Ta = 25°C
300
100
50
30
0.4
0.2
0
−25
0
25
50
75
100
125
10
10
150
Ambient temperature Ta (°C)
30
50
100
300
500
1000
Drain current ID (mA)
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SSM6L09FU
Q1 (Nch MOS FET)
Vth – Ta
IDR – VDS
1000
2
Drain Reveres current IDR (mA)
Vth (V)
Gate threshold voltage
ID = 0.1 mA
1.6
VDS = 5 V
1.4
1.2
1
0.8
0.6
0.4
0.2
0
−25
Common Source
VGS = 0
Ta = 25°C
Common Source
1.8
0
50
25
75
100
125
800
D
600
G
IDR
S
400
200
0
0
150
−0.4
−0.2
C – VDS
100
Switching time t (ns)
(pF)
Capacitance C
5000
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Ciss
10
Coss
VDS
−1.2
−1.4
(V)
10
Common Source
VDD = 5 V
VGS = 0~4 V
Ta = 25°C
1000
toff
tf
100
ton
tr
Crss
Drain-Source voltage
−1
t – ID
500
1
−0.8
Drain-Source voltage
Ambient temperature Ta (°C)
1
0.1
−0.6
10
1
100
VDS (V)
10
100
1000
Drain current ID (mA)
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Q2 (Pch MOS FET)
ID – VDS
RDS (ON) – ID
−500
8
Common Source
Common Source
−10
−4
Drain current ID
(mA)
−400
7
Drain-Source on resistance
RDS (ON) (Ω)
Ta = 25°C
−3.3
−300
−3.0
−200
−2.8
−2.6
−100
−0.5
−1
−1.5
Drain-Source voltage
6
5
VGS = −3.3 V
4
−4 V
3
−10 V
2
1
VGS = −2.4 V
0
0
Ta = 25°C
0
0
−2
−100
−200
−300
−500
Drain current ID (mA)
VDS (V)
ID – VGS
RDS (ON) – VGS
−1000
8
Common Source
Common Source
7
VDS = −5 V
Drain-Source on resistance
RDS (ON) (Ω)
(mA)
−100
Drain current ID
−400
25°C
−10
Ta = 100°C
−25°C
−1
−0.1
ID = −100 mA
6
5
Ta = 100°C
4
25°C
3
2
−25°C
1
−0.01
0
−1
−2
−3
Gate-Source voltage
0
0
−4
VGS (V)
−2
−4
−6
Gate-Source voltage
−8
−10
VGS (V)
⏐Yfs⏐ – ID
1000
RDS (ON) – Ta
Common Source
8
500
Common Source
Ta = 25°C
ID = −100 mA
Forward transfer admittance
⏐Yfs⏐ (mS)
Drain-Source on resistance
RDS (ON) (Ω)
7
6
5
VDS = −5 V
VGS = −3.3 V
−4 V
4
3
−10 V
2
300
100
50
30
1
0
−25
0
25
50
75
100
125
10
−10
150
Ambient temperature Ta (°C)
−30
−50
−100
−300 −500
−1000
Drain current ID (mA)
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Q2 (Pch MOS FET)
Vth – Ta
IDR – VDS
−500
−2
ID = −0.1 mA
−1.6
Drain Reveres current IDR (mA)
Vth (V)
Gate threshold voltage
Common Source
VGS = 0
Ta = 25°C
Common Source
−1.8
VDS = −5 V
−1.4
−1.2
−1
−0.8
−0.6
−0.4
−0.2
0
−25
0
50
25
75
100
125
−400
D
−300
G
IDR
S
−200
−100
0
0
150
0.4
0.8
1
Drain-Source voltage
VDS
0.2
Ambient temperature Ta (°C)
C – VDS
100
Switching time t (ns)
(pF)
Capacitance C
5000
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Ciss
10
Coss
−10
Drain-Source voltage
1.4
(V)
Common Source
VDD = −5 V
VGS = 0~−4 V
Ta = 25°C
1000
toff
tf
100
ton
tr
Crss
−1
1.2
t – ID
500
1
−0.1
0.6
10
−1
−100
VDS (V)
−10
−100
−1000
Drain current ID (mA)
Q1, Q2 common
PD* – Ta
400
Power dissipation PD* (mW)
Mounted on FR4 board
(25.4 mm × 25.4 mm ×1.6 t
2
Cu pad: 0.32 mm × 6) Figure 1
300
200
100
0
0
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
*: Total rating
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RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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